公开(公告)号：US20130149800A1

公开(公告)日：2013-06-13

申请号：US13719887

申请日：2012-12-19

Applicant: Metryx Limited

Inventor： Adrian KIERMASZ

IPC: H01L21/66

CPC classification number: H01L22/12 ,  G05B15/02 ,  G05B23/024 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor wafer fabrication metrology method in which process steps are characterised by a change in wafer mass, whereby during fabrication mass is used as a measurable parameter to implement statistical process control on the one or more of process steps. In one aspect, the shape of a measured mass distribution is compared with the shape of a predetermined characteristic mass distribution to monitor the process. An determined empirical relationship between a control variable of the process and the characteristic mass change may enable differences between the measured mass distribution and characteristic mass distribution to provide information about the control variable. In another aspect, the relative position of an individual measured wafer mass change in a current distribution provides information about individual wafer problems independently from general process problems.

Abstract translation: 一种半导体晶片制造计量方法，其中工艺步骤的特征在于晶片质量的变化，由此在制造期间将质量用作可测量的参数以对一个或多个工艺步骤实施统计过程控制。 在一个方面，将测量的质量分布的形状与预定特征质量分布的形状进行比较以监测该过程。 过程的控制变量与特征质量变化之间确定的经验关系可以使测量的质量分布和特征质量分布之间的差异能够提供关于控制变量的信息。 另一方面，单个测量的晶片质量变化在电流分布中的相对位置提供了关于单个晶片问题的信息，而与一般工艺问题无关。

公开(公告)号：US20160195424A1

公开(公告)日：2016-07-07

申请号：US14911499

申请日：2014-08-21

Applicant: METRYX LIMITED

Inventor： Robert John WILBY ,  Adrian KIERMASZ

IPC: G01G19/00

CPC classification number: G01G19/00 ,  B06B1/06 ,  B06B1/0648 ,  G01G3/16 ,  G01G17/02 ,  G01H11/08 ,  H01L21/67253

Abstract: A method of determining information relating to the mass of a semiconductor wafer is disclosed. The method comprises loading the semiconductor wafer on to a measurement area of a weighing device having weight compensation means arranged to compensate for a predetermined weight loaded on to the measurement area; generating measurement output indicative of a difference between the weight of the semiconductor wafer and the predetermined weight; and using the measurement output to determine information relating to the mass of the semiconductor wafer. Also discloses is a corresponding weighing device for determining information relating to the mass of a semiconductor wafer.

Abstract translation: 公开了一种确定与半导体晶片的质量有关的信息的方法。 该方法包括将半导体晶片装载到称重装置的测量区域上，该称重装置具有重量补偿装置，其布置成补偿加载到测量区域上的预定重量; 产生指示半导体晶片的重量与预定重量之间的差异的测量输出; 并且使用测量输出来确定与半导体晶片的质量有关的信息。 还公开了一种用于确定与半导体晶片的质量相关的信息的相应的称重装置。

公开(公告)号：US20170115158A1

公开(公告)日：2017-04-27

申请号：US15301661

申请日：2015-03-23

Applicant: METRYX LIMITED

Inventor： Robert John WILBY ,  Adrian KIERMASZ

IPC: G01G23/10 ,  H01L21/67 ,  H01L21/66 ,  G01G17/00

CPC classification number: G01G23/10 ,  G01G17/00 ,  H01L21/67253 ,  H01L21/67288 ,  H01L22/12

Abstract: A semiconductor wafer weighing apparatus comprises: a weight force measuring device for measuring a weight force of a semiconductor wafer; and control means configured to control an operation of the apparatus based on detection of acceleration of the apparatus or of a semiconductor wafer loaded on the apparatus by a detector for detecting acceleration of the apparatus or of a semiconductor wafer loaded on the apparatus; wherein: the control means is arranged to determine an error in the output of the weight force measuring device caused by an acceleration of the apparatus or of a semiconductor wafer loaded on the apparatus, using a predetermined relationship that matches the error in the output of the weight force measuring device to acceleration of the apparatus or of a semiconductor wafer loaded on the apparatus for different accelerations of the apparatus or of a semiconductor wafer loaded on the apparatus.

公开(公告)号：US20160306004A1

公开(公告)日：2016-10-20

申请号：US15195131

申请日：2016-06-28

Applicant: METRYX LIMITED

Inventor： Adrian KIERMASZ

IPC: G01R31/26 ,  G01N5/00

CPC classification number: G01R31/2601 ,  C30B1/00 ,  C30B7/00 ,  C30B23/00 ,  G01N1/00 ,  G01N5/00 ,  G01N5/02 ,  G01N15/0893 ,  G01N2201/00 ,  G01N2203/00 ,  H01J49/26 ,  H01L22/12

Abstract: A method and apparatus for extracting the contents of voids and/or pores present in a semiconductor device to obtain information indicative of the nature of the voids and/or pores, e.g. to assist with metrology measurements. The method includes heating the semiconductor wafer to expel the contents of the voids and/or pores, collecting the expelled material in a collector, and measuring a consequential change in mass of the semiconductor wafer and/or the collector, to extract information indicative of the nature of the voids. This information may include information relating to the distribution of the voids and/or pores, and/or the sizes of the voids and/or pores, and/or the chemical contents of the voids and/or pores. The collector may include a condenser having a temperature-controlled surface (e.g. in thermal communication with a refrigeration unit) for condensing the expelled material.

Abstract translation: 一种用于提取存在于半导体器件中的空隙和/或孔的内容物以获得指示空隙和/或孔的性质的信息的方法和装置，例如， 协助测量测量。 该方法包括加热半导体晶片以排出空隙和/或孔的内容物，将集流器中的排出的材料收集起来，并测量半导体晶片和/或集电器的相应的质量变化，以提取指示 空洞的性质。 该信息可以包括关于空隙和/或孔的分布，和/或空隙和/或孔的尺寸和/或空隙和/或孔的化学成分的信息。 收集器可以包括具有用于冷凝排出的材料的温度控制表面（例如与制冷单元热连通）的冷凝器。

公开(公告)号：US20170005019A1

公开(公告)日：2017-01-05

申请号：US15039759

申请日：2014-11-03

Applicant: METRYX LIMITED

Inventor： Robert John WILBY ,  Adrian KIERMASZ

IPC: H01L21/66 ,  H01L21/677 ,  H01L21/67

CPC classification number: H01L22/26 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67706

Abstract: A semiconductor wafer processing method comprising controlling the temperature of a semiconductor wafer to be within a predetermined processing temperature range by: causing a first temperature change of the semiconductor wafer using a first temperature changing unit; and subsequently causing a second temperature change using a second temperature changing unit; wherein the first change is greater than the second change; and subsequently loading the semiconductor wafer on a processing area of a semiconductor wafer processing apparatus. Also, a semiconductor wafer processing method comprising controlling the temperature of a semiconductor wafer to be within a predetermined processing temperature range by causing a temperature change of the semiconductor wafer using a temperature changing unit; transporting the semiconductor wafer from the temperature changing unit to a processing area of a semiconductor wafer processing apparatus; and controlling the temperature of the semiconductor wafer during the transporting step.

Abstract translation: 一种半导体晶片处理方法，包括：通过使用第一温度改变单元使半导体晶片的第一温度变化，将半导体晶片的温度控制在预定的处理温度范围内; 并且随后使用第二温度改变单元引起第二温度变化; 其中所述第一变化大于所述第二变化; 并随后将半导体晶片装载在半导体晶片处理装置的处理区域上。 此外，半导体晶片处理方法包括通过使用温度改变单元引起半导体晶片的温度变化来将半导体晶片的温度控制在预定的处理温度范围内; 将半导体晶片从温度改变单元传送到半导体晶片处理装置的处理区域; 以及在输送步骤期间控制半导体晶片的温度。