公开(公告)号：US07045015B2

公开(公告)日：2006-05-16

申请号：US10346935

申请日：2003-01-17

申请人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Lemna J. Hunter

发明人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Lemna J. Hunter

IPC分类号： B05C11/06

CPC分类号： B05D1/02 ,  B05D3/06 ,  B05D3/068 ,  B05D5/00 ,  B05D5/12 ,  C23C18/06 ,  C23C18/14 ,  H05K3/1241

摘要： Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.

公开(公告)号：US07294366B2

公开(公告)日：2007-11-13

申请号：US10952108

申请日：2004-09-27

申请人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

发明人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

IPC分类号： B05D3/06

CPC分类号： H05K3/125 ,  B05D1/02 ,  B05D3/06 ,  C08F2/46 ,  C23C18/02 ,  C23C18/14 ,  H01L51/0009

摘要： A method of depositing various materials onto heat-sensitive targets. Heat-sensitive targets are generally defined as targets that have thermal damage thresholds that are lower than the temperature required to process a deposited material. The invention uses precursor solutions and/or particle or colloidal suspensions, along with optional pre-deposition treatment and/or post-deposition treatment to lower the laser power required to drive the deposit to its final state. The present invention uses Maskless Mesoscale Material Deposition (M3D™) to perform direct deposition of material onto the target in a precise, highly localized fashion. Features with linewidths as small as 4 microns may be deposited, with little or no material waste. A laser is preferably used to heat the material to process it to obtain the desired state, for example by chemical decomposition, sintering, polymerization, and the like. This laser processing may be performed in an ambient environment with laser powers of less than 100 milliwatts.

摘要翻译： 将各种材料沉积在热敏靶上的方法。 热敏靶标通常定义为具有低于处理沉积材料所需温度的热损伤阈值的靶。 本发明使用前体溶液和/或颗粒或胶态悬浮液以及任选的预沉积处理和/或沉积后处理以降低将沉积物驱动到其最终状态所需的激光功率。 本发明使用无掩模中尺度材料沉积（M 3 S D D TM）以精确，高度局部化的方式将材料直接沉积到靶上。 具有小至4微米的线宽的特征可能被沉积，很少或没有材料浪费。 优选使用激光加热材料以加工以获得期望的状态，例如通过化学分解，烧结，聚合等。 该激光处理可以在具有小于100毫瓦的激光功率的周围环境中进行。

公开(公告)号：US07938079B2

公开(公告)日：2011-05-10

申请号：US11011366

申请日：2004-12-13

申请人： Bruce H. King ,  Michael J. Renn ,  Marcelino Essien ,  Gregory J. Marquez ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

发明人： Bruce H. King ,  Michael J. Renn ,  Marcelino Essien ,  Gregory J. Marquez ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

IPC分类号： B05C5/00 ,  B05C19/00 ,  F23D11/10

CPC分类号： H05K3/125

摘要： Method and apparatus for improved maskless deposition of electronic and biological materials using an extended nozzle. The process is capable of direct deposition of features with linewidths varying from a few microns to a fraction of a millimeter, and can be used to deposit features on targets with damage thresholds near 100° C. or less. Deposition and subsequent processing may be performed under ambient conditions and produce linewidths as low as 1 micron, with sub-micron edge definition. The extended nozzle reduces particle overspray and has a large working distance; that is, the orifice to target distance may be several millimeters or more, enabling direct write onto non-planar surfaces. The nozzle allows for deposition of features with linewidths that are approximately as small as one-twentieth the size of the nozzle orifice diameter, and is preferably interchangeable, enabling rapid variance of deposited linewidth.

摘要翻译： 使用扩展喷嘴改善电子和生物材料的无掩模沉积的方法和装置。 该过程能够直线沉积具有从几微米变化到几分之一毫米的线宽的特征，并且可以用于在具有接近100℃或更低的损伤阈值的靶上沉积特征。 沉积和后续处理可以在环境条件下进行，并产生低至1微米的线宽，具有亚微米边缘定义。 扩展喷嘴可以减少颗粒过度喷涂，工作距离大; 也就是说，孔到目标距离可以是几毫米或更多，使得能够直接写在非平面表面上。 喷嘴允许具有大约等于喷嘴孔直径的二十分之二的线宽的特征的沉积，并且优选地是可互换的，使得沉积线宽的快速变化。

公开(公告)号：US08110247B2

公开(公告)日：2012-02-07

申请号：US11430636

申请日：2006-05-08

申请人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

发明人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

IPC分类号： B41J2/015

CPC分类号： H05K3/102 ,  H05K3/105 ,  H05K2203/086 ,  H05K2203/087 ,  H05K2203/107 ,  H05K2203/1344 ,  Y10S428/901

摘要： A method of depositing various materials onto heat-sensitive targets, particularly oxygen-sensitive materials. Heat-sensitive targets are generally defined as targets that have thermal damage thresholds that are lower than the temperature required to process a deposited material. The invention uses precursor solutions and/or particle or colloidal suspensions, along with optional pre-deposition treatment and/or post-deposition treatment to lower the laser power required to drive the deposit to its final state. The present invention uses Maskless Mesoscale Material Deposition (M3D™) to perform direct deposition of material onto the target in a precise, highly localized fashion. Features with linewidths as small as 4 microns may be deposited, with little or no material waste. A laser is preferably used to heat the material to process it to obtain the desired state, for example by chemical decomposition, sintering, polymerization, and the like. This laser processing may be performed in an ambient environment with laser powers of less than 100 milliwatts. Cover gases and/or forming gases may be used during thermal processing to change the material properties, for example by preventing oxidation.

摘要翻译： 将各种材料沉积在热敏性靶材上，特别是氧敏感材料的方法。 热敏靶标通常定义为具有低于处理沉积材料所需温度的热损伤阈值的靶。 本发明使用前体溶液和/或颗粒或胶态悬浮液以及任选的预沉积处理和/或沉积后处理以降低将沉积物驱动到其最终状态所需的激光功率。 本发明使用无掩模中尺度材料沉积（M3D TM）以精确，高度局部化的方式将材料直接沉积到靶上。 具有小至4微米的线宽的特征可能被沉积，很少或没有材料浪费。 优选使用激光加热材料以加工以获得期望的状态，例如通过化学分解，烧结，聚合等。 该激光处理可以在具有小于100毫瓦的激光功率的周围环境中进行。 可以在热处理期间使用覆盖气体和/或成形气体来改变材料性质，例如通过防止氧化。

公开(公告)号：US08455051B2

公开(公告)日：2013-06-04

申请号：US12976906

申请日：2010-12-22

申请人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Gregory J. Marquez ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

发明人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Gregory J. Marquez ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

IPC分类号： B05D5/12

CPC分类号： B05D1/02 ,  B05D3/06 ,  B05D3/068 ,  B05D5/00 ,  B05D5/12 ,  C23C18/06 ,  C23C18/14 ,  H05K3/1241

摘要： Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.

公开(公告)号：US07987813B2

公开(公告)日：2011-08-02

申请号：US12349279

申请日：2009-01-06

申请人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Gregory J. Marquez ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

发明人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Gregory J. Marquez ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

IPC分类号： B05C11/00 ,  B05C11/06 ,  B05B1/08 ,  B05B5/00

CPC分类号： B05D1/02 ,  B05D3/06 ,  B05D3/068 ,  B05D5/00 ,  B05D5/12 ,  C23C18/06 ,  C23C18/14 ,  H05K3/1241

摘要： Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.

摘要翻译： 用于电子和生物材料无掩模沉积的装置和方法。 该过程能够直接沉积具有从微米范围变化到几分之一毫米的线宽的特征，并且可以用于将特征沉积在具有接近100℃的损伤阈值的基底上。沉积和随后的加工可以在 环境条件下，无需真空气氛。 该方法也可以在惰性气体环境中进行。 沉积和随后的激光后处理产生低至1微米的线宽，具有亚微米边缘定义。 设备喷嘴具有大的工作距离 - 孔到基板的距离可以是几毫米，并且直接写入非平面表面是可能的。

公开(公告)号：US20110129615A1

公开(公告)日：2011-06-02

申请号：US12976906

申请日：2010-12-22

申请人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Gregory J. Marquez ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

发明人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Gregory J. Marquez ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

IPC分类号： B05D1/02 ,  B05D1/12 ,  B05D3/02 ,  B05D3/06 ,  B05D5/12 ,  B05D5/06 ,  H05K3/00 ,  B05D5/00 ,  B05D7/00

CPC分类号： B05D1/02 ,  B05D3/06 ,  B05D3/068 ,  B05D5/00 ,  B05D5/12 ,  C23C18/06 ,  C23C18/14 ,  H05K3/1241

摘要： Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.

摘要翻译： 用于电子和生物材料无掩模沉积的装置和方法。 该过程能够直接沉积具有从微米范围变化到几分之一毫米的线宽的特征，并且可以用于将特征沉积在具有接近100℃的损伤阈值的基底上。沉积和随后的加工可以在 环境条件下，无需真空气氛。 该方法也可以在惰性气体环境中进行。 沉积和随后的激光后处理产生低至1微米的线宽，具有亚微米边缘定义。 设备喷嘴具有大的工作距离 - 孔到基板的距离可以是几毫米，并且直接写入非平面表面是可能的。

公开(公告)号：US07674671B2

公开(公告)日：2010-03-09

申请号：US11302481

申请日：2005-12-12

申请人： Michael J. Renn ,  Marcelino Essien ,  Bruce H. King ,  Jason A. Paulsen

发明人： Michael J. Renn ,  Marcelino Essien ,  Bruce H. King ,  Jason A. Paulsen

IPC分类号： H01L21/8234

CPC分类号： H01L21/76877 ,  B05D1/02 ,  H01B13/0026 ,  H01C17/06 ,  H01C17/08 ,  H01L21/76802 ,  H01L21/76804 ,  H01L21/76805 ,  H01L21/76879 ,  H01L41/314

摘要： Method and apparatus for direct writing of passive structures having a tolerance of 5% or less in one or more physical, electrical, chemical, or optical properties. The present apparatus is capable of extended deposition times. The apparatus may be configured for unassisted operation and uses sensors and feedback loops to detect physical characteristics of the system to identify and maintain optimum process parameters.

摘要翻译： 用于在一种或多种物理，电学，化学或光学性质中直接写入具有5％或更小的公差的被动结构的方法和装置。 本装置能够延长沉积时间。 该装置可以被配置为无辅助操作，并且使用传感器和反馈回路来检测系统的物理特性以识别和维持最佳过程参数。

公开(公告)号：US20090114151A1

公开(公告)日：2009-05-07

申请号：US12349279

申请日：2009-01-06

申请人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Gregory J. Marquez ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

发明人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Gregory J. Marquez ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

IPC分类号： B05C11/00

CPC分类号： B05D1/02 ,  B05D3/06 ,  B05D3/068 ,  B05D5/00 ,  B05D5/12 ,  C23C18/06 ,  C23C18/14 ,  H05K3/1241

摘要： Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.

摘要翻译： 用于电子和生物材料无掩模沉积的装置和方法。 该过程能够直接沉积具有从微米范围变化到几分之一毫米的线宽的特征，并且可以用于在具有接近100℃的损伤阈值的基底上沉积特征。沉积和随后的加工可以在 环境条件下，无需真空气氛。 该方法也可以在惰性气体环境中进行。 沉积和随后的激光后处理产生低至1微米的线宽，具有亚微米边缘定义。 设备喷嘴具有大的工作距离 - 孔到基板的距离可以是几毫米，并且直接写入非平面表面是可能的。

公开(公告)号：US07485345B2

公开(公告)日：2009-02-03

申请号：US11317457

申请日：2005-12-22

申请人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Gregory J. Marquez ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

发明人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Gregory J. Marquez ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

IPC分类号： B05D5/00

CPC分类号： B05D1/02 ,  B05D3/06 ,  B05D3/068 ,  B05D5/00 ,  B05D5/12 ,  C23C18/06 ,  C23C18/14 ,  H05K3/1241

摘要： Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.

摘要翻译： 用于电子和生物材料无掩模沉积的装置和方法。 该过程能够直接沉积具有从微米范围变化到几分之一毫米的线宽的特征，并且可以用于将特征沉积在具有接近100℃的损伤阈值的基底上。沉积和随后的加工可以在 环境条件下，无需真空气氛。 该方法也可以在惰性气体环境中进行。 沉积和随后的激光后处理产生低至1微米的线宽，具有亚微米边缘定义。 设备喷嘴具有大的工作距离 - 孔到基板的距离可以是几毫米，并且直接写入非平面表面是可能的。