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8 条记录 (耗时 0.033 秒)

    Annular aerosol jet deposition using an extended nozzle
    1.
    发明授权
    Annular aerosol jet deposition using an extended nozzle 有权
    使用延长喷嘴的环形气溶胶喷射沉积

    公开(公告)号：US07938079B2

    公开(公告)日：2011-05-10

    申请号：US11011366

    申请日：2004-12-13

    申请人： Bruce H. King ,  Michael J. Renn ,  Marcelino Essien ,  Gregory J. Marquez ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

    发明人： Bruce H. King ,  Michael J. Renn ,  Marcelino Essien ,  Gregory J. Marquez ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

    IPC分类号： B05C5/00 ,  B05C19/00 ,  F23D11/10

    CPC分类号： H05K3/125

    摘要： Method and apparatus for improved maskless deposition of electronic and biological materials using an extended nozzle. The process is capable of direct deposition of features with linewidths varying from a few microns to a fraction of a millimeter, and can be used to deposit features on targets with damage thresholds near 100° C. or less. Deposition and subsequent processing may be performed under ambient conditions and produce linewidths as low as 1 micron, with sub-micron edge definition. The extended nozzle reduces particle overspray and has a large working distance; that is, the orifice to target distance may be several millimeters or more, enabling direct write onto non-planar surfaces. The nozzle allows for deposition of features with linewidths that are approximately as small as one-twentieth the size of the nozzle orifice diameter, and is preferably interchangeable, enabling rapid variance of deposited linewidth.

    摘要翻译： 使用扩展喷嘴改善电子和生物材料的无掩模沉积的方法和装置。 该过程能够直线沉积具有从几微米变化到几分之一毫米的线宽的特征，并且可以用于在具有接近100℃或更低的损伤阈值的靶上沉积特征。 沉积和后续处理可以在环境条件下进行，并产生低至1微米的线宽，具有亚微米边缘定义。 扩展喷嘴可以减少颗粒过度喷涂，工作距离大; 也就是说，孔到目标距离可以是几毫米或更多，使得能够直接写在非平面表面上。 喷嘴允许具有大约等于喷嘴孔直径的二十分之二的线宽的特征的沉积，并且优选地是可互换的，使得沉积线宽的快速变化。

    Apparatuses and methods for maskless mesoscale material deposition
    3.
    发明授权
    Apparatuses and methods for maskless mesoscale material deposition 有权
    无掩模中尺度材料沉积的设备和方法

    公开(公告)号：US07987813B2

    公开(公告)日：2011-08-02

    申请号：US12349279

    申请日：2009-01-06

    申请人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Gregory J. Marquez ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

    发明人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Gregory J. Marquez ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

    IPC分类号： B05C11/00 ,  B05C11/06 ,  B05B1/08 ,  B05B5/00

    CPC分类号： B05D1/02 ,  B05D3/06 ,  B05D3/068 ,  B05D5/00 ,  B05D5/12 ,  C23C18/06 ,  C23C18/14 ,  H05K3/1241

    摘要： Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.

    摘要翻译： 用于电子和生物材料无掩模沉积的装置和方法。 该过程能够直接沉积具有从微米范围变化到几分之一毫米的线宽的特征，并且可以用于将特征沉积在具有接近100℃的损伤阈值的基底上。沉积和随后的加工可以在 环境条件下，无需真空气氛。 该方法也可以在惰性气体环境中进行。 沉积和随后的激光后处理产生低至1微米的线宽，具有亚微米边缘定义。 设备喷嘴具有大的工作距离 - 孔到基板的距离可以是几毫米，并且直接写入非平面表面是可能的。

    Apparatuses and Methods for Maskless Mesoscale Material Deposition
    5.
    发明申请
    Apparatuses and Methods for Maskless Mesoscale Material Deposition 有权
    无掩模中尺度材料沉积的设备和方法

    公开(公告)号：US20090114151A1

    公开(公告)日：2009-05-07

    申请号：US12349279

    申请日：2009-01-06

    申请人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Gregory J. Marquez ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

    发明人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Gregory J. Marquez ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

    IPC分类号： B05C11/00

    CPC分类号： B05D1/02 ,  B05D3/06 ,  B05D3/068 ,  B05D5/00 ,  B05D5/12 ,  C23C18/06 ,  C23C18/14 ,  H05K3/1241

    摘要： Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.

    摘要翻译： 用于电子和生物材料无掩模沉积的装置和方法。 该过程能够直接沉积具有从微米范围变化到几分之一毫米的线宽的特征，并且可以用于在具有接近100℃的损伤阈值的基底上沉积特征。沉积和随后的加工可以在 环境条件下，无需真空气氛。 该方法也可以在惰性气体环境中进行。 沉积和随后的激光后处理产生低至1微米的线宽，具有亚微米边缘定义。 设备喷嘴具有大的工作距离 - 孔到基板的距离可以是几毫米，并且直接写入非平面表面是可能的。

    Apparatuses and methods for maskless mesoscale material deposition
    6.
    发明授权
    Apparatuses and methods for maskless mesoscale material deposition 有权
    无掩模中尺度材料沉积的设备和方法

    公开(公告)号：US07485345B2

    公开(公告)日：2009-02-03

    申请号：US11317457

    申请日：2005-12-22

    申请人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Gregory J. Marquez ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

    发明人： Michael J. Renn ,  Bruce H. King ,  Marcelino Essien ,  Gregory J. Marquez ,  Manampathy G. Giridharan ,  Jyh-Cherng Sheu

    IPC分类号： B05D5/00

    CPC分类号： B05D1/02 ,  B05D3/06 ,  B05D3/068 ,  B05D5/00 ,  B05D5/12 ,  C23C18/06 ,  C23C18/14 ,  H05K3/1241

    摘要： Apparatuses and processes for maskless deposition of electronic and biological materials. The process is capable of direct deposition of features with linewidths varying from the micron range up to a fraction of a millimeter, and may be used to deposit features on substrates with damage thresholds near 100° C. Deposition and subsequent processing may be carried out under ambient conditions, eliminating the need for a vacuum atmosphere. The process may also be performed in an inert gas environment. Deposition of and subsequent laser post processing produces linewidths as low as 1 micron, with sub-micron edge definition. The apparatus nozzle has a large working distance—the orifice to substrate distance may be several millimeters—and direct write onto non-planar surfaces is possible.

    摘要翻译： 用于电子和生物材料无掩模沉积的装置和方法。 该过程能够直接沉积具有从微米范围变化到几分之一毫米的线宽的特征，并且可以用于将特征沉积在具有接近100℃的损伤阈值的基底上。沉积和随后的加工可以在 环境条件下，无需真空气氛。 该方法也可以在惰性气体环境中进行。 沉积和随后的激光后处理产生低至1微米的线宽，具有亚微米边缘定义。 设备喷嘴具有大的工作距离 - 孔到基板的距离可以是几毫米，并且直接写入非平面表面是可能的。