Auxiliary drag field electrodes
    1.
    发明授权
    Auxiliary drag field electrodes 有权
    辅助拖拉电极

    公开(公告)号:US07675031B2

    公开(公告)日:2010-03-09

    申请号:US12129608

    申请日:2008-05-29

    IPC分类号: H01J49/42 H05H9/02

    CPC分类号: H01J49/063 H01J49/4225

    摘要: Auxiliary electrodes for creating drag fields may be provided as arrays of finger electrodes on thin substrates such as printed circuit board material for insertion between main RF electrodes of a multipole. A progressive range of voltages can be applied along lengths of the auxiliary electrodes by implementing a voltage divider that utilizes static resisters interconnecting individual finger electrodes of the arrays. Dynamic voltage variations may be applied to individual finger electrodes or to groups of the finger electrodes.

    摘要翻译: 用于产生拖曳场的辅助电极可以被提供为诸如印刷电路板材料的薄基板上的指状电极阵列,用于插入多极的主RF电极之间。 可以通过实施使用互连阵列的各个指状电极的静电阻的分压器来沿辅助电极的长度施加逐渐的电压范围。 动态电压变化可以施加到各个指状电极或指状电极的组。

    TEMPERATURE COMPENSATED TIME-OF-FLIGHT MASS SPECTROMETER
    2.
    发明申请
    TEMPERATURE COMPENSATED TIME-OF-FLIGHT MASS SPECTROMETER 有权
    温度补偿飞行时间质谱仪

    公开(公告)号:US20060043283A1

    公开(公告)日:2006-03-02

    申请号:US10931809

    申请日:2004-08-31

    IPC分类号: H01J49/00

    CPC分类号: H01J49/40

    摘要: An apparatus that comprises material which have different thermal expansion coefficients, combined in such a way that the length of the drift region is variant, and self adjusting with temperature. The adjustment is such as to compensate for the length changes resulting from thermal expansion or contraction in other ion optical elements, such that ions of substantially equivalent mass to charge ratios maintain a constant flight time though the system. This allows for use of standard construction methods for the ion optical elements.

    摘要翻译: 一种包括具有不同热膨胀系数的材料的装置,其组合使得漂移区域的长度是不同的,并且随着温度自调节。 该调整是为了补偿由其它离子光学元件的热膨胀或收缩导致的长度变化,使得基本相当的质荷比的离子通过系统保持恒定的飞行时间。 这允许使用用于离子光学元件的标准施工方法。

    Temperature compensated time-of-flight mass spectrometer
    3.
    发明授权
    Temperature compensated time-of-flight mass spectrometer 有权
    温度补偿飞行时间质谱仪

    公开(公告)号:US06998607B1

    公开(公告)日:2006-02-14

    申请号:US10931809

    申请日:2004-08-31

    IPC分类号: H01J49/40

    CPC分类号: H01J49/40

    摘要: An apparatus that comprises material which have different thermal expansion coefficients, combined in such a way that the length of the drift region is variant, and self adjusting with temperature. The adjustment is such as to compensate for the length changes resulting from thermal expansion or contraction in other ion optical elements, such that ions of substantially equivalent mass to charge ratios maintain a constant flight time though the system. This allows for use of standard construction methods for the ion optical elements.

    摘要翻译: 一种包括具有不同热膨胀系数的材料的装置,其组合使得漂移区域的长度是不同的,并且随着温度自调节。 该调整是为了补偿由其它离子光学元件的热膨胀或收缩导致的长度变化,使得基本相当的质荷比的离子通过系统保持恒定的飞行时间。 这允许使用用于离子光学元件的标准施工方法。

    METHODS AND APPARATUS FOR INSPECTING FURNACE TUBES
    4.
    发明申请
    METHODS AND APPARATUS FOR INSPECTING FURNACE TUBES 审中-公开
    检查炉管的方法和装置

    公开(公告)号:US20090120191A1

    公开(公告)日:2009-05-14

    申请号:US11937263

    申请日:2007-11-08

    IPC分类号: G01N29/14

    摘要: Methods and apparatus for inspecting tubes or pipes preferably includes at least one sealed inspection pig having a length to diameter relationship based on a known bend radius of a tube or pipe to be inspected. A plurality of such pigs may be used where such pigs are interconnected, sealed, and releasable by design and where an inspection transducer is located approximately centrally between the ends of at least one of the pigs.

    摘要翻译: 用于检查管或管的方法和装置优选地包括至少一个密封的检查猪,其基于待检查的管或管的已知弯曲半径具有长度与直径的关系。 可以使用多个这样的猪,其中这些猪通过设计互连,密封和可释放,并且其中检查换能器大致位于至少一只猪的端部之间的中心位置。

    High throughput brightfield/darkfield wafer inspection system using advanced optical techiques
    5.
    发明申请
    High throughput brightfield/darkfield wafer inspection system using advanced optical techiques 有权
    采用先进光学技术的高通量明场/暗场晶片检测系统

    公开(公告)号:US20050062962A1

    公开(公告)日:2005-03-24

    申请号:US10983078

    申请日:2004-11-04

    摘要: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the Manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage. Light exiting from the second polarizer passes through a filter which absorbs a portion of the light and comprises the second stage of light control. The beam then passes through a polarizing beamsplitter. The second channel is further reflected and polarized and both beams thereafter illuminate the substrate.

    摘要翻译: 提供的宽带明场/暗场晶片检查系统经由缺陷检测器接收宽带明场照明信息,该缺陷检测器信号用于开始暗场照明。 缺陷检测器形成缺陷数据的二维直方图,并且双模缺陷判定算法和后处理器评估缺陷。 暗场辐射由两个可调节的高度激光束提供,其将晶片的表面从约6度39度照射。 每个激光器的方位角与晶片上的曼哈顿几何形状的取向成45度,并且彼此相差90度。 通过改变柱面透镜位置​​来补偿角度反射镜的变化,通过平移可调节的反射镜,将照明光斑定位在传感器视场内,旋转和随后移动柱面透镜来提供垂直角度调整性。 系统中的明场分束器是可拆卸的,并且当执行暗场照明时,优选地用空白物替换。 系统的光级控制由双偏振器第一级提供。 从第二偏振片射出的光通过吸收一部分光的滤光器,并包括第二级光控制。 然后光束通过偏振分光镜。 第二通道被进一步反射和偏振,并且两个光束此后照亮基板。

    PIPE EXTRACTION DEVICE
    6.
    发明申请

    公开(公告)号:US20230009117A1

    公开(公告)日:2023-01-12

    申请号:US17857108

    申请日:2022-07-04

    IPC分类号: B25B27/14

    摘要: Methods and devices for extracting an internal pipe/tube element from a connected outer pipe/tube element. Certain embodiments are directed to methods and devices that inwardly distort a pipe/tube at a connection to allow the pipe to be more easily disconnected without damaging the overlapping (outside) half of the connection. Collapsing the pipe adjacent to, and into, the fitting and reducing its circumference allows the pipe to be unscrewed or slide out of the overlapping side of the connection. Embodiments are described including partially cutting thru the male portion of the connection and locally compressing and collapsing the pipe to radially disengage it from interior of the opposing fitting or pipe section. In one method, an interior pipe/tube is disengaged from a fitting or overlapping connection where a connection (weld, adhesive or soldered attachment) is utilized and the connection is selected small/weak enough to be broken in the compression process.

    High throughput brightfield/darkfield wafer inspection system using advanced optical techniques
    7.
    发明授权
    High throughput brightfield/darkfield wafer inspection system using advanced optical techniques 失效
    采用先进光学技术的高通量明场/暗视场检测系统

    公开(公告)号:US06288780B1

    公开(公告)日:2001-09-11

    申请号:US08991927

    申请日:1997-12-16

    IPC分类号: G01N2100

    摘要: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the Manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage. Light exiting from the second polarizer passes through a filter which absorbs a portion of the light and comprises the second stage of light control. The beam then passes through a polarizing beamsplitter. The second channel is further reflected and polarized and both beams thereafter illuminate the substrate.

    摘要翻译: 提供的宽带明场/暗场晶片检查系统经由缺陷检测器接收宽带明场照明信息,该缺陷检测器信号用于开始暗场照明。 缺陷检测器形成缺陷数据的二维直方图,并且双模缺陷判定算法和后处理器评估缺陷。 暗场辐射由两个可调节的高度激光束提供,其将晶片的表面从约6度39度照射。 每个激光器的方位角与晶片上的曼哈顿几何形状的取向成45度,并且彼此相差90度。 通过改变柱面透镜位置​​来补偿角度反射镜的变化,通过平移可调节的反射镜,将照明光斑定位在传感器视场内,旋转和随后移动柱面透镜来提供垂直角度调整性。 系统中的明场分束器是可拆卸的,并且当执行暗场照明时,优选地用空白物替换。 系统的光级控制由双偏振器第一级提供。 从第二偏振片射出的光通过吸收一部分光的滤光器,并包括第二级光控制。 然后光束通过偏振分光镜。 第二通道被进一步反射和偏振,并且两个光束此后照亮基板。

    High throughput darkfield/brightfield wafer inspection system using advanced optical techniques
    8.
    发明授权
    High throughput darkfield/brightfield wafer inspection system using advanced optical techniques 有权
    采用先进光学技术的高通量暗场/亮场晶片检测系统

    公开(公告)号:US07522275B2

    公开(公告)日:2009-04-21

    申请号:US11893169

    申请日:2007-08-14

    IPC分类号: G01N21/00

    摘要: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage.

    摘要翻译: 提供的宽带明场/暗场晶片检查系统经由缺陷检测器接收宽带明场照明信息,该缺陷检测器信号用于开始暗场照明。 缺陷检测器形成缺陷数据的二维直方图,并且双模缺陷判定算法和后处理器评估缺陷。 暗场辐射由两个可调高度的激光束提供。 通过改变柱面透镜位置​​来补偿角度反射镜的变化,通过平移可调节的反射镜,将照明光斑定位在传感器视场内,旋转和随后移动柱面透镜来提供垂直角度调整性。 系统中的明场分束器是可拆卸的,并且当执行暗场照明时,优选地用空白物替换。 系统的光级控制由双偏振器第一级提供。

    High throughput brightfield/darkfield water inspection system using advanced optical techniques
    9.
    发明申请
    High throughput brightfield/darkfield water inspection system using advanced optical techniques 有权
    采用先进光学技术的高通量明场/暗场水检测系统

    公开(公告)号:US20080225298A1

    公开(公告)日:2008-09-18

    申请号:US12154593

    申请日:2008-05-22

    IPC分类号: G01N21/55

    摘要: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage. Light exiting from the second polarizer passes through a filter which absorbs a portion of the light and comprises the second stage of light control. The beam then passes through a polarizing beamsplitter. The second channel is further reflected and polarized and both beams thereafter illuminate the substrate.

    摘要翻译: 提供的宽带明场/暗场晶片检查系统经由缺陷检测器接收宽带明场照明信息,该缺陷检测器信号用于开始暗场照明。 缺陷检测器形成缺陷数据的二维直方图,并且双模缺陷判定算法和后处理器评估缺陷。 暗场辐射由两个可调节的高度激光束提供,其将晶片的表面从约6度39度照射。 每个激光器定向在与晶片上的曼哈顿几何形状的取向成45度的方位角,并且彼此成90度的方位角。 通过改变柱面透镜位置​​来补偿角度反射镜的变化,通过平移可调节的反射镜,将照明光斑定位在传感器视场内,旋转和随后移动柱面透镜来提供垂直角度调整性。 系统中的明场分束器是可拆卸的,并且当执行暗场照明时,优选地用空白物替换。 系统的光级控制由双偏振器第一级提供。 从第二偏振片射出的光通过吸收一部分光的滤光器,并包括第二级光控制。 然后光束通过偏振分光镜。 第二通道被进一步反射和偏振,并且两个光束此后照亮基板。

    High throughput darkfield/brightfield wafer inspection system using advanced optical techniques

    公开(公告)号:US07259844B2

    公开(公告)日:2007-08-21

    申请号:US11652781

    申请日:2007-01-12

    IPC分类号: G01N21/00

    摘要: The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams which illuminate the surface of the wafer from approximately 6 to 39 degrees. Each laser is oriented at an azimuth angle 45 degrees from the orientation of the manhattan geometry on the wafer, and 90 degrees in azimuth from one another. Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage. Light exiting from the second polarizer passes through a filter which absorbs a portion of the light and comprises the second stage of light control. The beam then passes through a polarizing beamsplitter. The second channel is further reflected and polarized and both beams thereafter illuminate the substrate.