Current supply circuit
    1.
    发明授权
    Current supply circuit 失效
    电流供应电路

    公开(公告)号:US4465967A

    公开(公告)日:1984-08-14

    申请号:US342791

    申请日:1982-01-26

    IPC分类号: H04M19/00 G05F1/46

    CPC分类号: H04M19/008

    摘要: A current supply circuit comprises a DC power feed circuit exhibiting a constant current characteristic for a power source and a constant resistance characteristic for a load, a first detecting circuit for detecting a load current or a load voltage, a DC-DC converter circuit inserted between the power source and the DC power feed circuit, a second detecting circuit for detecting an output voltage from the DC-DC converter circuit; and an operation circuit coupled at the input with the output of the first detecting circuit and the output of the second detecting circuit for controlling the DC-DC converter circuit by the output thereof. The DC-DC converter circuit is so controlled as to produce a voltage representative of the sum of a voltage drop across the load and a fixed voltage necessary for the operation of the DC power feed circuit.

    摘要翻译: 电流源电路包括对电源呈现恒定电流特性的直流供电电路和用于负载的恒定电阻特性,用于检测负载电流或负载电压的第一检测电路,插入在电源之间的DC-DC转换器电路 电源和直流供电电路,用于检测来自DC-DC转换器电路的输出电压的第二检测电路; 以及在输入端耦合第一检测电路的输出和第二检测电路的输出的操作电路,用于通过其输出控制DC-DC转换器电路。 DC-DC转换器电路被控制以产生代表负载两端的电压降和DC供电电路的操作所需的固定电压之和的电压。

    Loop detecting circuit
    2.
    发明授权
    Loop detecting circuit 失效
    环路检测电路

    公开(公告)号:US4360709A

    公开(公告)日:1982-11-23

    申请号:US184182

    申请日:1980-09-04

    IPC分类号: H04Q3/72 H04M3/22 H04B3/46

    CPC分类号: H04M3/2272

    摘要: A circuit for detecting a closed loop formed by actuation of a telephone set, the loop being indicative of a connection between the telephone set and an exchange through a ring line and a tip line. The detecting circuit comprises generators for generating first and second detection signals having amplitudes proportional to a ring line current and a tip line current respectively, a summing circuit for summing the detection signals and a comparator for comparing the outputs of the summing circuit and a reference value and delivering an output depending upon the result of comparison.

    摘要翻译: 一种用于检测通过致动电话机而形成的闭环的电路,所述回路指示通过环线和尖端线路在电话机和交换机之间的连接。 检测电路包括用于产生具有与环形线电流和尖端线电流成比例的振幅的第一和第二检测信号的发生器,用于对检测信号求和的加法电路和用于比较加法电路的输出和参考值的比较器 并根据比较结果输出输出。

    Semiconductor switch circuit
    3.
    发明授权
    Semiconductor switch circuit 失效
    半导体开关电路

    公开(公告)号:US4277696A

    公开(公告)日:1981-07-07

    申请号:US27838

    申请日:1979-04-06

    摘要: A semiconductor switch circuit comprises first, second and third transistors. The complementary first and second transistors make up an inverted Darlington circuit. The third transistor with the base and collector thereof connected to the collector and base of the inverted Darlington circuit respectively makes up a positive feedback circuit with the inverted Darlington circuit. The conduction current of the switch circuit is split into two conduction currents flowing through the complementary first and second transistors making up the inverted Darlington circuit. By controlling the base current of at least one of the first and second transistors, the switch circuit is subjected to on-off control, thereby making it possible to reduce the required control power and increase the off-controllable load current.

    摘要翻译: 半导体开关电路包括第一,第二和第三晶体管。 互补的第一和第二晶体管构成反向达林顿电路。 其基极和集电极连接到反向达林顿电路的集电极和基极的第三晶体管分别构成了具有反向达林顿电路的正反馈电路。 开关电路的导通电流被分成两个传导电流,流过构成反向达林顿电路的互补第一和第二晶体管。 通过控制第一和第二晶体管中的至少一个晶体管的基极电流,对开关电路进行开 - 关控制,从而可以减少所需的控制功率并增加不可控负载电流。

    Current supplying circuit with shorted-to-ground fault detecting function
    5.
    发明授权
    Current supplying circuit with shorted-to-ground fault detecting function 失效
    电流供电电路具有短路对地故障检测功能

    公开(公告)号:US4385336A

    公开(公告)日:1983-05-24

    申请号:US213010

    申请日:1980-12-04

    CPC分类号: H04M3/30 H04M19/001

    摘要: This invention relates to a current supplying circuit for supplying a current to a terminal apparatus through a ring line and a tip line which are connected through resistance elements to a potential source and ground, respectively. This current supplying circuit includes respective detectors for generating first and second detection signals of amplitudes proportional to the currents flowing in the ring and tip lines, respectively, a circuit for generating a reference signal, and a comparator for comparing the signal difference between the first and second detection signals and the reference signal so as to produce a signal in accordance with the compared result, thus a shorted-to-ground fault on the ring line or tip line being detected by monitoring the signal produced in accordance with the compared result. After the shorted-to-ground fault is detected, the current supplying circuit is protected from breakdown.

    摘要翻译: 本发明涉及一种电流供应电路,用于通过环形线路和尖端线路向终端设备提供电流,该电流线路分别通过电阻元件连接到电位源和接地。 该电流供给电路包括各自的检测器,用于分别产生与在环路和尖端线路中流动的电流成比例的振幅的第一和第二检测信号,用于产生参考信号的电路,以及比较器,用于比较第一和第 第二检测信号和参考信号,以根据比较结果产生信号,从而通过监视根据比较结果产生的信号来检测环形线或尖端线上的短路对地故障。 在检测到短路对地故障之后,保护电流供应电路不受破坏。

    Semiconductor integrated circuit
    6.
    发明授权
    Semiconductor integrated circuit 失效
    半导体集成电路

    公开(公告)号:US4380021A

    公开(公告)日:1983-04-12

    申请号:US131931

    申请日:1980-03-21

    摘要: A semiconductor integrated circuit with a short turn-off time in which a high breakdown voltage semiconductor element and a Schottky barrier diode are fabricated into a semiconductor substrate, is disclosed. In the integrated circuit, within a semiconductor substrate of a first conductivity type, a diffusion layer with a low impurity concentration disposed deeply which is used as one layer of a high breakdown voltage semiconductor element formed by a high breakdown voltage process and a diffusion layer with a high impurity concentration disposed more shallowly than the diffusion layer with a low impurity concentration, are formed so as to partially couple with each other. The diffusion layer with the high impurity concentration is used for both the ohmic contact for the electrode of the diffusion layer with the low impurity concentration and for a guard ring for a Schottky barrier diode. With such a construction, a Schottky barrier diode may be assembled into a high breakdown voltage semiconductor element with a minimum increase of area. Accordingly, the semiconductor integrated circuit obtained has a high degree of integration and a short turn-off time.

    摘要翻译: 公开了一种半导体集成电路,其具有短的截止时间,其中高耐压半导体元件和肖特基势垒二极管制造成半导体衬底。 在集成电路中,在第一导电类型的半导体衬底内,深度布置的杂质浓度低的扩散层被用作通过高击穿电压工艺形成的高耐压电压半导体元件的一层和具有 形成了比具有低杂质浓度的扩散层更浅的位置的高杂质浓度,以便彼此部分耦合。 具有高杂质浓度的扩散层用于具有低杂质浓度的扩散层电极的欧姆接触和用于肖特基势垒二极管的保护环。 通过这样的结构,可以将肖特基势垒二极管组装成具有最小面积增加的高击穿电压半导体元件。 因此,所获得的半导体集成电路具有高集成度和短的关断时间。