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4 条记录 (耗时 0.022 秒)

    Current supply circuit
    1.
    发明授权
    Current supply circuit 失效
    电流供应电路

    公开(公告)号：US4465967A

    公开(公告)日：1984-08-14

    申请号：US342791

    申请日：1982-01-26

    申请人： Michio Tokunaga ,  Junjiro Kitano ,  Akio Sagawa ,  Toshio Hayashi ,  Kazuo Hamazato

    发明人： Michio Tokunaga ,  Junjiro Kitano ,  Akio Sagawa ,  Toshio Hayashi ,  Kazuo Hamazato

    IPC分类号： H04M19/00 ,  G05F1/46

    CPC分类号： H04M19/008

    摘要： A current supply circuit comprises a DC power feed circuit exhibiting a constant current characteristic for a power source and a constant resistance characteristic for a load, a first detecting circuit for detecting a load current or a load voltage, a DC-DC converter circuit inserted between the power source and the DC power feed circuit, a second detecting circuit for detecting an output voltage from the DC-DC converter circuit; and an operation circuit coupled at the input with the output of the first detecting circuit and the output of the second detecting circuit for controlling the DC-DC converter circuit by the output thereof. The DC-DC converter circuit is so controlled as to produce a voltage representative of the sum of a voltage drop across the load and a fixed voltage necessary for the operation of the DC power feed circuit.

    摘要翻译： 电流源电路包括对电源呈现恒定电流特性的直流供电电路和用于负载的恒定电阻特性，用于检测负载电流或负载电压的第一检测电路，插入在电源之间的DC-DC转换器电路 电源和直流供电电路，用于检测来自DC-DC转换器电路的输出电压的第二检测电路; 以及在输入端耦合第一检测电路的输出和第二检测电路的输出的操作电路，用于通过其输出控制DC-DC转换器电路。 DC-DC转换器电路被控制以产生代表负载两端的电压降和DC供电电路的操作所需的固定电压之和的电压。

    Semiconductor switch
    2.
    发明授权
    Semiconductor switch 失效
    半导体开关

    公开(公告)号：US4184086A

    公开(公告)日：1980-01-15

    申请号：US921951

    申请日：1978-07-05

    申请人： Akio Sagawa ,  Masayoshi Suzuki ,  Tetsuo Ito

    发明人： Akio Sagawa ,  Masayoshi Suzuki ,  Tetsuo Ito

    IPC分类号： H02M1/06 ,  H01L29/74 ,  H03K5/04 ,  H03K17/0812 ,  H03K17/16 ,  H03K17/73 ,  H03K17/72

    CPC分类号： H03K17/16 ,  H03K17/08124 ,  H03K5/04

    摘要： A semiconductor switch comprising a PNPN switch which has a four-layered PNPN structure with at least three PN-junctions, switching means for electrically short-circuiting a path between a P-type base and an N-type emitter of the PNPN switch when a transient voltage is applied between a P-type emitter and the N-type emitter of the PNPN switch, and drive means for driving the switching means, the drive means driving the switching means so that the path between the P-type base and the N-type emitter may be electrically short-circuited for a fixed time even after termination of the transient state, whereby any improper ignition of the PNPN switch is prevented even after the termination of the transient state.

    摘要翻译： 一种半导体开关，包括具有至少三个PN结的四层PNPN结构的PNPN开关，当PNPN开关的P型基极和N型发射极之间的路径电气短路时， 在P型发射极和PNPN开关的N型发射极之间施加瞬时电压，以及用于驱动开关装置的驱动装置，驱动装置驱动开关装置，使得P型基极和N 即使在暂态状态结束之后，也可能固定时间内电气短路，从而即使在暂态状态结束后也防止了PNPN开关的任何不正确点火。

    Semiconductor switch
    3.
    发明授权
    Semiconductor switch 失效
    半导体开关

    公开(公告)号：US4392069A

    公开(公告)日：1983-07-05

    申请号：US170180

    申请日：1980-07-18

    申请人： Masayoshi Suzuki ,  Akio Sagawa

    发明人： Masayoshi Suzuki ,  Akio Sagawa

    IPC分类号： H01L27/06 ,  H01L21/822 ,  H01L29/417 ,  H01L29/74 ,  H03K17/73 ,  H03K17/72 ,  H03K17/16

    CPC分类号： H01L29/74 ,  H01L29/41716

    摘要： In semiconductor switches, erroneous firing is often a serious problem. To overcome this, a semiconductor switch is provided which includes a thyristor of PNPN structure with three PN junctions and with anode, cathode and gate electrodes, a first transistor for short-circuiting at least one PN junction of said thyristor upon its saturation, and a second transistor provided between the anode side or cathode side of the thyristor and the base of said first transistor to cause saturation of the first transistor in accordance with the voltage which is applied to the anode or cathode of the thyristor. The ratio of the time constant of the second transistor to that of said thyristor is not substantially less than 0.5. This ratio is established by using similar plane diffused patterns for the second transistor and a third transistor which is defined by three continuous layers of the thyristor.

    摘要翻译： 在半导体开关中，错误的点火通常是一个严重问题。 为了克服这一点，提供了一种半导体开关，其包括具有三个PN结的PNPN结构的晶闸管以及阳极，阴极和栅电极，用于在其饱和时使所述晶闸管的至少一个PN结短路的第一晶体管，以及 提供在晶闸管的阳极侧或阴极侧与所述第一晶体管的基极之间的第二晶体管，以根据施加到晶闸管的阳极或阴极的电压使第一晶体管饱和。 第二晶体管的时间常数与所述晶闸管的时间常数之比基本上不小于0.5。 该比率通过使用用于第二晶体管的类似的平面扩散图案和由三个可控硅的三个连续层限定的第三晶体管来建立。