公开(公告)号：US20040146650A1

公开(公告)日：2004-07-29

申请号：US10697597

申请日：2003-10-29

Applicant: Microfabrica Inc.

Inventor： Michael S. Lockard ,  Adam L. Cohen ,  Roger W. Barton

IPC: B05D001/36 ,  B05D003/10

CPC classification number: C23C4/02 ,  C25D1/00 ,  C25D1/003

Abstract: Various embodiments of the invention present techniques for forming structures via a combined electrochemical fabrication process and a thermal spraying process or powder deposition processes. In a first set of embodiments, selective deposition occurs via masking processes (e.g. a contact masking process or adhered mask process) and thermal spraying or powder deposition is used in blanket deposition processes to fill in voids left by selective deposition processes. In a second set of embodiments, after selective deposition of a first material, a second material is blanket deposited to fill in the voids, the two depositions are planarized to a common level and then a portion of the first or second materials is removed (e.g. by etching) and a third material is sprayed into the voids left by the etching operation. In both embodiments the resulting depositions are planarized to a desired layer thickness in preparation for adding additional layers.

Abstract translation: 本发明的各种实施例提出了通过组合的电化学制造工艺和热喷涂工艺或粉末沉积工艺形成结构的技术。 在第一组实施例中，通过掩模工艺（例如接触掩模工艺或粘附的掩模工艺）进行选择性沉积，并且在覆盖沉积工艺中使用热喷涂或粉末沉积来填充通过选择性沉积工艺留下的空隙。 在第二组实施例中，在选择性沉积第一材料之后，第二材料被覆盖沉积以填充空隙，将两个沉积物平坦化到共同的水平，然后去除第一或第二材料的一部分（例如 通过蚀刻），并且通过蚀刻操作将第三材料喷射到留下的空隙中。 在两个实施方案中，将所得沉积物平坦化至所需的层厚度，以准备添加另外的层。