公开(公告)号：US20040251142A1

公开(公告)日：2004-12-16

申请号：US10830262

申请日：2004-04-21

Applicant: Microfabrica Inc.

Inventor： Adam L. Cohen ,  Michael S. Lockard ,  Dennis Smalley

IPC: C25D005/02 ,  H01L021/00 ,  H01L021/84

CPC classification number: C25D5/02 ,  B33Y10/00 ,  C23C18/1605 ,  C23C18/1651 ,  C25D1/003 ,  H01P11/006

Abstract: Disclosed methods reduce the discontinuities that between individual layers of a structure that is formed at least in part using electrochemical fabrication techniques. Discontinuities may exist between layers of a structure as a result of up-facing or down-facing regions defined in data descriptive of the structure or they may exist as a result of building limitations, e.g., those that result in non-parallel orientation between a building axis and sidewall surfaces of layers. Methods for reducing discontinuities may be applied to all regions or only to selected regions of the structure. Methods may be tailored to improve the accuracy between an original design of the structure and the structure as fabricated or they may simply be used to smooth the discontinuities between layers. Methods may include deposition operations that selectively favor filling of the discontinuities and/or etching operations that selectively favor removal of material from protrusions that define discontinuities.

Abstract translation: 公开的方法减少了使用电化学制造技术至少部分形成的结构的各个层之间的不连续性。 结构的层之间可能存在不连续性，这是由于在描述结构的数据中定义的面向上或向下的区域的结果，或者它们可能由于构建限制而存在，例如导致在 建筑轴线和层的侧壁表面。 用于减少不连续性的方法可以应用于所有区域或仅应用于结构的选定区域。 可以调整方法以提高结构的原始设计和所制造的结构之间的精度，或者可以简单地用于平滑层之间的不连续性。 方法可以包括选择性地有利于填充不连续性和/或蚀刻操作的沉积操作，其选择性地有利于从限定不连续性的突起中去除材料。

公开(公告)号：US20040146650A1

公开(公告)日：2004-07-29

申请号：US10697597

申请日：2003-10-29

Applicant: Microfabrica Inc.

Inventor： Michael S. Lockard ,  Adam L. Cohen ,  Roger W. Barton

IPC: B05D001/36 ,  B05D003/10

CPC classification number: C23C4/02 ,  C25D1/00 ,  C25D1/003

Abstract: Various embodiments of the invention present techniques for forming structures via a combined electrochemical fabrication process and a thermal spraying process or powder deposition processes. In a first set of embodiments, selective deposition occurs via masking processes (e.g. a contact masking process or adhered mask process) and thermal spraying or powder deposition is used in blanket deposition processes to fill in voids left by selective deposition processes. In a second set of embodiments, after selective deposition of a first material, a second material is blanket deposited to fill in the voids, the two depositions are planarized to a common level and then a portion of the first or second materials is removed (e.g. by etching) and a third material is sprayed into the voids left by the etching operation. In both embodiments the resulting depositions are planarized to a desired layer thickness in preparation for adding additional layers.

Abstract translation: 本发明的各种实施例提出了通过组合的电化学制造工艺和热喷涂工艺或粉末沉积工艺形成结构的技术。 在第一组实施例中，通过掩模工艺（例如接触掩模工艺或粘附的掩模工艺）进行选择性沉积，并且在覆盖沉积工艺中使用热喷涂或粉末沉积来填充通过选择性沉积工艺留下的空隙。 在第二组实施例中，在选择性沉积第一材料之后，第二材料被覆盖沉积以填充空隙，将两个沉积物平坦化到共同的水平，然后去除第一或第二材料的一部分（例如 通过蚀刻），并且通过蚀刻操作将第三材料喷射到留下的空隙中。 在两个实施方案中，将所得沉积物平坦化至所需的层厚度，以准备添加另外的层。