公开(公告)号：US20040134772A1

公开(公告)日：2004-07-15

申请号：US10677556

申请日：2003-10-01

Applicant: Microfabrica Inc.

Inventor： Adam L. Cohen ,  Daniel I. Feinberg ,  Christopher A. Bang

IPC: C25D017/00

CPC classification number: B81C3/002 ,  B81B2201/042 ,  B81C3/008 ,  B81C2203/051 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  H01P1/202 ,  H01P3/06 ,  H01P5/183 ,  H01P11/00 ,  H01P11/005 ,  H01P11/007 ,  H05K3/4647

Abstract: Permanent or temporary alignment and/or retention structures for receiving multiple components are provided. The structures are preferably formed monolithically via a plurality of deposition operations (e.g. electrodeposition operations). The structures typically include two or more positioning fixtures that control or aid in the positioning of components relative to one another, such features may include (1) positioning guides or stops that fix or at least partially limit the positioning of components in one or more orientations or directions, (2) retention elements that hold positioned components in desired orientations or locations, and/or (3) positioning and/or retention elements that receive and hold adjustment modules into which components can be fixed and which in turn can be used for fine adjustments of position and/or orientation of the components.

Abstract translation: 提供用于接收多个部件的永久或临时对准和/或保持结构。 优选地，这些结构通过多个沉积操作（例如电沉积操作）一体地形成。 结构通常包括两个或更多个控制或辅助部件相对于彼此的定位的定位夹具，这些特征可以包括（1）定位引导件或止动件，其固定或至少部分地限制部件在一个或多个取向中的定位 或方向，（2）将定位的部件保持在期望的取向或位置的保持元件，和/或（3）接收和保持调节模块的定位和/或保持元件，组件可以被固定到其中， 微调零件的位置和/或取向。

公开(公告)号：US20040182716A1

公开(公告)日：2004-09-23

申请号：US10724515

申请日：2003-11-26

Applicant: Microfabrica Inc.

Inventor： Adam L. Cohen ,  Dennis R. Smalley

IPC: C25D005/02

CPC classification number: B81C1/00126 ,  B33Y10/00 ,  B81C2201/019

Abstract: Treatment of substrates, formation of structures, and formation of multilayer structures using contact masks are disclosed where a non-parallel or non-simultaneous mating of various mask contact surfaces to a substrate surface occurs. Some embodiments involve bringing a relative planar mask contact surface and a relative planar substrate surface together at a small angle (but larger than an alignment tolerance associated with the system). Some embodiments involve flexing a mask to make it non-planar and bringing it into contact with a substrate such that progressively more contact between the mask and substrate occur until complete mating is achieved. Some embodiments involve use of gas or liquid pressure to bow a flexible or semi-flexible mask and use a linear actuator to bring the mating surfaces together and to bring the mask into a more planar configuration.

Abstract translation: 公开了基板的处理，结构的形成和使用接触掩模的多层结构的形成，其中发生各种掩模接触表面与基板表面的非平行或非同时的配合。 一些实施例涉及将相对平面的掩模接触表面和相对平面的基板表面以小角度（但大于与系统相关联的对准公差）组合在一起。 一些实施例涉及弯曲掩模以使其非平面并使其与基底接触，使得在掩模和基底之间逐渐更多的接触发生直到完成配合。 一些实施例涉及使用气体或液体压力来弯曲柔性或半柔性掩模，并且使用线性致动器将配合表面合在一起并使掩模进入更平面的构型。

公开(公告)号：US20040147124A1

公开(公告)日：2004-07-29

申请号：US10724513

申请日：2003-11-26

Applicant: Microfabrica Inc.

Inventor： Adam L. Cohen ,  Dennis R. Smalley

IPC: H01L021/302 ,  H01L021/461

CPC classification number: B81C1/00182 ,  B33Y10/00

Abstract: Electrochemical Fabrication techniques are used to modify substrates or to form multilayer structures (e.g. components or devices) from a plurality of overlaying and adhered layers. Masks are used to selectively etch or deposit material. Some masks may be of the contact type and may be formed of multiple materials some of which may be support materials, some of which may be mating materials for contacting a substrate and some may be intermediate materials. In some embodiments the contact masks may have conformable contact surfaces (i.e. surfaces with sufficient flexibility or deformability that they can substantially conform to surface of the substrate to form a seal with it) or they may have semi-rigid or even rigid surfaces. In embodiments where masks are used for selective deposition operations, etching operations may be performed after deposition to remove flash deposits (thin undesired deposits from areas that were intended to be masked).

Abstract translation: 电化学制造技术用于修饰衬底或从多个覆盖和粘附层形成多层结构（例如组件或器件）。 掩模用于选择性地蚀刻或沉积材料。 一些掩模可以是接触型并且可以由多种材料形成，其中一些可以是支撑材料，其中一些可以是用于接触基底的配合材料，一些可以是中间材料。 在一些实施例中，接触掩模可以具有适形的接触表面（即具有足够的柔性或可变形性的表面，使得它们可以基本上符合基底的表面以与其形成密封），或者它们可以具有半刚性或甚至刚性的表面。 在掩模用于选择性沉积操作的实施例中，可以在沉积之后执行蚀刻操作以去除闪蒸沉积物（来自旨在被掩蔽的区域的不希望的沉积物）。

公开(公告)号：US20040146650A1

公开(公告)日：2004-07-29

申请号：US10697597

申请日：2003-10-29

Applicant: Microfabrica Inc.

Inventor： Michael S. Lockard ,  Adam L. Cohen ,  Roger W. Barton

IPC: B05D001/36 ,  B05D003/10

CPC classification number: C23C4/02 ,  C25D1/00 ,  C25D1/003

Abstract: Various embodiments of the invention present techniques for forming structures via a combined electrochemical fabrication process and a thermal spraying process or powder deposition processes. In a first set of embodiments, selective deposition occurs via masking processes (e.g. a contact masking process or adhered mask process) and thermal spraying or powder deposition is used in blanket deposition processes to fill in voids left by selective deposition processes. In a second set of embodiments, after selective deposition of a first material, a second material is blanket deposited to fill in the voids, the two depositions are planarized to a common level and then a portion of the first or second materials is removed (e.g. by etching) and a third material is sprayed into the voids left by the etching operation. In both embodiments the resulting depositions are planarized to a desired layer thickness in preparation for adding additional layers.

Abstract translation: 本发明的各种实施例提出了通过组合的电化学制造工艺和热喷涂工艺或粉末沉积工艺形成结构的技术。 在第一组实施例中，通过掩模工艺（例如接触掩模工艺或粘附的掩模工艺）进行选择性沉积，并且在覆盖沉积工艺中使用热喷涂或粉末沉积来填充通过选择性沉积工艺留下的空隙。 在第二组实施例中，在选择性沉积第一材料之后，第二材料被覆盖沉积以填充空隙，将两个沉积物平坦化到共同的水平，然后去除第一或第二材料的一部分（例如 通过蚀刻），并且通过蚀刻操作将第三材料喷射到留下的空隙中。 在两个实施方案中，将所得沉积物平坦化至所需的层厚度，以准备添加另外的层。

公开(公告)号：US20040251142A1

公开(公告)日：2004-12-16

申请号：US10830262

申请日：2004-04-21

Applicant: Microfabrica Inc.

Inventor： Adam L. Cohen ,  Michael S. Lockard ,  Dennis Smalley

IPC: C25D005/02 ,  H01L021/00 ,  H01L021/84

CPC classification number: C25D5/02 ,  B33Y10/00 ,  C23C18/1605 ,  C23C18/1651 ,  C25D1/003 ,  H01P11/006

Abstract: Disclosed methods reduce the discontinuities that between individual layers of a structure that is formed at least in part using electrochemical fabrication techniques. Discontinuities may exist between layers of a structure as a result of up-facing or down-facing regions defined in data descriptive of the structure or they may exist as a result of building limitations, e.g., those that result in non-parallel orientation between a building axis and sidewall surfaces of layers. Methods for reducing discontinuities may be applied to all regions or only to selected regions of the structure. Methods may be tailored to improve the accuracy between an original design of the structure and the structure as fabricated or they may simply be used to smooth the discontinuities between layers. Methods may include deposition operations that selectively favor filling of the discontinuities and/or etching operations that selectively favor removal of material from protrusions that define discontinuities.

Abstract translation: 公开的方法减少了使用电化学制造技术至少部分形成的结构的各个层之间的不连续性。 结构的层之间可能存在不连续性，这是由于在描述结构的数据中定义的面向上或向下的区域的结果，或者它们可能由于构建限制而存在，例如导致在 建筑轴线和层的侧壁表面。 用于减少不连续性的方法可以应用于所有区域或仅应用于结构的选定区域。 可以调整方法以提高结构的原始设计和所制造的结构之间的精度，或者可以简单地用于平滑层之间的不连续性。 方法可以包括选择性地有利于填充不连续性和/或蚀刻操作的沉积操作，其选择性地有利于从限定不连续性的突起中去除材料。

公开(公告)号：US20040134788A1

公开(公告)日：2004-07-15

申请号：US10677498

申请日：2003-10-01

Applicant: Microfabrica Inc.

Inventor： Adam L. Cohen ,  Dennis R. Smalley ,  Gang Zhang

IPC: C25D005/02 ,  C25D005/48

CPC classification number: C25D5/022 ,  B33Y10/00 ,  C25D1/08 ,  C25D5/10

Abstract: Multilayer structures are electrochemically fabricated via depositions of one or more materials in a plurality of overlaying and adhered layers. Selectivity of deposition is obtained via a multi-cell controllable mask. Alternatively, net selective deposition is obtained via a blanket deposition and a selective removal of material via a multi-cell mask. Individual cells of the mask may contain electrodes comprising depositable material or electrodes capable of receiving etched material from a substrate. Alternatively, individual cells may include passages that allow or inhibit ion flow between a substrate and an external electrode and that include electrodes or other control elements that can be used to selectively allow or inhibit ion flow and thus inhibit significant deposition or etching. Single cell masks having a cell size that is smaller or equal to the desired deposition resolution may also be used to form structures.

Abstract translation: 多层结构通过在多个覆盖层和粘附层中的一种或多种材料的沉积进行电化学制造。 沉积的选择性通过多单元可控掩模获得。 或者，通过覆盖沉积和通过多细胞掩模选择性去除材料获得净选择性沉积。 掩模的各个单元可以包含包含可沉积材料的电极或能够从基底接受蚀刻材料的电极。 或者，单个电池可以包括允许或抑制衬底和外部电极之间的离子流动并且包括电极或其它控制元件的通道，其可以用于选择性地允许或抑制离子流动，从而抑制显着的沉积或蚀刻。 具有小于或等于所需沉积分辨率的单元尺寸的单细胞掩模也可用于形成结构。