公开(公告)号：US12022666B2

公开(公告)日：2024-06-25

申请号：US17534953

申请日：2021-11-24

Applicant: Micron Technology, Inc.

Inventor： David Ross Economy ,  Andrew Leslie Beemer

IPC: H10B63/00 ,  H01L21/321 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H10N70/00 ,  H10N70/20

CPC classification number: H10B63/80 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76819 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53266 ,  H10N70/231 ,  H10N70/826 ,  H10N70/841 ,  H10N70/882

Abstract: Methods, systems, and devices for via formation in a memory device are described. A memory cell stack for a memory array may be formed. In some examples, the memory cell stack may comprise a storage element. A via may also be formed in an area outside of the memory array, and the via may protrude from a material that surrounds the via. A material may then be formed above the memory cell stack and also above the via, and the top surface of the barrier material may be planarized until at least a portion of the via is exposed. A subsequently formed material may thereby be in direct contact with the top of the via, while a portion of the initially formed material may remain above the memory cell stack.

公开(公告)号：US20220165793A1

公开(公告)日：2022-05-26

申请号：US17534953

申请日：2021-11-24

Applicant: Micron Technology, Inc.

Inventor： David Ross Economy ,  Andrew Leslie Beemer

IPC: H01L27/24 ,  H01L21/768 ,  H01L21/321 ,  H01L23/522 ,  H01L45/00 ,  H01L23/532 ,  H01L23/528

Abstract: Methods, systems, and devices for via formation in a memory device are described. A memory cell stack for a memory array may be formed. In some examples, the memory cell stack may comprise a storage element. A via may also be formed in an area outside of the memory array, and the via may protrude from a material that surrounds the via. A material may then be formed above the memory cell stack and also above the via, and the top surface of the barrier material may be planarized until at least a portion of the via is exposed. A subsequently formed material may thereby be in direct contact with the top of the via, while a portion of the initially formed material may remain above the memory cell stack.

公开(公告)号：US11189662B2

公开(公告)日：2021-11-30

申请号：US16746645

申请日：2020-01-17

Applicant: Micron Technology, Inc.

Inventor： David Ross Economy ,  Andrew Leslie Beemer

IPC: H01L47/00 ,  H01L27/24 ,  H01L21/768 ,  H01L21/321 ,  H01L23/522 ,  H01L45/00 ,  H01L23/532 ,  H01L23/528

Abstract: Methods, systems, and devices for via formation in a memory device are described. A memory cell stack for a memory array may be formed. In some examples, the memory cell stack may comprise a storage element. A via may also be formed in an area outside of the memory array, and the via may protrude from a material that surrounds the via. A material may then be formed above the memory cell stack and also above the via, and the top surface of the barrier material may be planarized until at least a portion of the via is exposed. A subsequently formed material may thereby be in direct contact with the top of the via, while a portion of the initially formed material may remain above the memory cell stack.

公开(公告)号：US20210225937A1

公开(公告)日：2021-07-22

申请号：US16746645

申请日：2020-01-17

Applicant: Micron Technology, Inc.

Inventor： David Ross Economy ,  Andrew Leslie Beemer

IPC: H01L27/24 ,  H01L21/321 ,  H01L45/00 ,  H01L23/528 ,  H01L21/768 ,  H01L23/532 ,  H01L23/522

Abstract: Methods, systems, and devices for via formation in a memory device are described. A memory cell stack for a memory array may be formed. In some examples, the memory cell stack may comprise a storage element. A via may also be formed in an area outside of the memory array, and the via may protrude from a material that surrounds the via. A material may then be formed above the memory cell stack and also above the via, and the top surface of the barrier material may be planarized until at least a portion of the via is exposed. A subsequently formed material may thereby be in direct contact with the top of the via, while a portion of the initially formed material may remain above the memory cell stack.