APPARATUSES, SYSTEMS, AND METHODS FOR CONFIGURABLE MEMORY

    公开(公告)号:US20240428839A1

    公开(公告)日:2024-12-26

    申请号:US18826719

    申请日:2024-09-06

    Abstract: At least one portion of a memory array may be arranged to provide high density non-volatile random access memory (HIGH DENSITY NON-VOLATILE RAM) while at least one other portion of the memory array may be arranged to provide dynamic random access memory (DRAM)-like memory. In some examples, the memory array may be arranged by programming one or more configuration devices. In some examples, the configuration device may include one or more switches to couple one or more memory cells to a sense amplifier. In some examples, the configuration device may include fuses and/or antifuses to couple one or more memory cells to a sense amplifier. In some examples, the portions of the memory array may be reconfigurable from one arrangement to another arrangement.

    APPARATUSES, SYSTEMS, AND METHODS FOR CONFIGURABLE MEMORY

    公开(公告)号:US20230352073A1

    公开(公告)日:2023-11-02

    申请号:US17732885

    申请日:2022-04-29

    CPC classification number: G11C11/2255 G11C11/221 G11C11/2273

    Abstract: At least one portion of a memory array may be arranged to provide high density non-volatile random access memory (HIGH DENSITY NON-VOLATILE RAM) while at least one other portion of the memory array may be arranged to provide dynamic random access memory (DRAM)-like memory. In some examples, the memory array may be arranged by programming one or more configuration devices. In some examples, the configuration device may include one or more switches to couple one or more memory cells to a sense amplifier. In some examples, the configuration device may include fuses and/or antifuses to couple one or more memory cells to a sense amplifier. In some examples, the portions of the memory array may be reconfigurable from one arrangement to another arrangement.

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