公开(公告)号：US09496355B2

公开(公告)日：2016-11-15

申请号：US14754211

申请日：2015-06-29

Applicant: Micron Technology, Inc.

Inventor： Brenda D Kraus ,  Eugene P. Marsh

IPC: H01L21/285 ,  H01L21/336 ,  H01L29/788 ,  H01L29/423 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/28 ,  H01L29/792

CPC classification number: H01L29/42332 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/28273 ,  H01L21/28556 ,  H01L29/7881 ,  Y10S438/964 ,  Y10S977/943

Abstract: Isolated conductive nanoparticles on a dielectric layer and methods of fabricating such isolated conductive nanoparticles provide charge storage units in electronic structures for use in a wide range of electronic devices and systems. The isolated conductive nanoparticles may be used as a floating gate in a flash memory. In an embodiment, conductive nanoparticles are deposited on a dielectric layer by a plasma-assisted deposition process such that each conductive nanoparticle is isolated from the other conductive nanoparticles to configure the conductive nanoparticles as charge storage elements.

Abstract translation: 电介质层上的隔离导电纳米颗粒和制造这种隔离导电纳米颗粒的方法提供电子结构中的电荷存储单元，用于广泛的电子设备和系统。 隔离的导电纳米颗粒可以用作闪存中的浮动栅极。 在一个实施例中，通过等离子体辅助沉积工艺将导电纳米颗粒沉积在电介质层上，使得每个导电纳米颗粒与其它导电纳米颗粒分离，以将导电纳米颗粒配置为电荷存储元件。