公开(公告)号：US11520711B2

公开(公告)日：2022-12-06

申请号：US17338534

申请日：2021-06-03

Applicant: Micron Technology, Inc.

Inventor： Brenton P. Van Leeuwen ,  Nathaniel J. Meier

IPC: G06F12/14 ,  G06F12/00 ,  G11C17/16 ,  G06F21/78 ,  H04L9/08

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which security measures may be implemented to control access to a fuse array (or other secure features) of the memory devices based on a secure access key. In some cases, a customer may define and store a user-defined access key in the fuse array. In other cases, a manufacturer of the memory device may define a manufacturer-defined access key (e.g., an access key based on fuse identification (FID), a secret access key), where a host device coupled with the memory device may obtain the manufacturer-defined access key according to certain protocols. The memory device may compare an access key included in a command directed to the memory device with either the user-defined access key or the manufacturer-defined access key to determine whether to permit or prohibit execution of the command based on the comparison.

公开(公告)号：US11474955B2

公开(公告)日：2022-10-18

申请号：US17124312

申请日：2020-12-16

Applicant: Micron Technology, Inc.

Inventor： Shea M. Morrison ,  Brenton P. Van Leeuwen ,  Blakely N. Frechette

IPC: G06F12/14 ,  G06F21/55 ,  G11C5/14 ,  G11C16/22

Abstract: Apparatuses and methods related to memory disablement for memory security. Disabling the memory for memory security can include, responsive to receiving a trigger signal, provide a voltage, which may be in excess of an operating or nominal voltage, to the access circuitry. The voltage may thus be sufficient to render the access circuitry inoperable for accessing data stored in the memory array.

公开(公告)号：US20200174948A1

公开(公告)日：2020-06-04

申请号：US16204656

申请日：2018-11-29

Applicant: Micron Technology, Inc.

Inventor： Shea M. Morrison ,  Brenton P. Van Leeuwen ,  Blakely N. Frechette

IPC: G06F12/14 ,  G06F21/55 ,  G11C5/14

Abstract: Apparatuses and methods related to memory disablement for memory security. Disabling the memory for memory security can include, responsive to receiving a trigger signal, provide a voltage, which may be in excess of an operating or nominal voltage, to the access circuitry. The voltage may thus be sufficient to render the access circuitry inoperable for accessing data stored in the memory array.

公开(公告)号：US11494522B2

公开(公告)日：2022-11-08

申请号：US16677486

申请日：2019-11-07

Applicant: Micron Technology, Inc.

Inventor： Nathaniel J. Meier ,  Brenton P. Van Leeuwen

IPC: G06F21/79

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which self-lock security may be implemented to control access to a fuse array (or other secure features) of the memory devices based on a predefined event associated with the memory device operation. The predefined event may include an operating parameter of the memory device, one or more commands directed to the memory device, or both. The memory device may monitor the predefined event and determine that the predefined event satisfies a threshold. The threshold may be related to a time elapsed since the predefined event has occurred or a certain pattern in the one or more commands. Subsequently, the memory device may disable a circuit configured to access the fuse array based on the determination such that an access to the fuse array is no longer allowed.

公开(公告)号：US11182308B2

公开(公告)日：2021-11-23

申请号：US16677478

申请日：2019-11-07

Applicant: Micron Technology, Inc.

Inventor： Nathaniel J. Meier ,  Brenton P. Van Leeuwen

IPC: G06F12/14 ,  G06F3/06 ,  G06F21/62 ,  H04L9/32 ,  G11C11/4074 ,  G11C17/16 ,  G06F21/79

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which security measures may be implemented to control access to a fuse array (or other secure features) of the memory devices based on a secure access key. In some cases, a customer may define and store a user-defined access key in the fuse array. In other cases, a manufacturer of the memory device may define a manufacturer-defined access key (e.g., an access key based on fuse identification (FID), a secret access key), where a host device coupled with the memory device may obtain the manufacturer-defined access key according to certain protocols. The memory device may compare an access key included in a command directed to the memory device with either the user-defined access key or the manufacturer-defined access key to determine whether to permit or prohibit execution of the command based on the comparison.

公开(公告)号：US11132470B2

公开(公告)日：2021-09-28

申请号：US16677286

申请日：2019-11-07

Applicant: Micron Technology, Inc.

Inventor： Brenton P. Van Leeuwen ,  Nathaniel J. Meier

IPC: G06F7/04 ,  G06F21/79 ,  H04L9/06 ,  G06F21/81 ,  G06F12/00

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which security measures may be implemented to control access to a fuse array (or other secure features) of the memory devices based on a secure access key. In some cases, a customer may define and store a user-defined access key in the fuse array. In other cases, a manufacturer of the memory device may define a manufacturer-defined access key (e.g., an access key based on fuse identification (FID), a secret access key), where a host device coupled with the memory device may obtain the manufacturer-defined access key according to certain protocols. The memory device may compare an access key included in a command directed to the memory device with either the user-defined access key or the manufacturer-defined access key to determine whether to permit or prohibit execution of the command based on the comparison.

公开(公告)号：US20210141741A1

公开(公告)日：2021-05-13

申请号：US16677478

申请日：2019-11-07

Applicant: Micron Technology, Inc.

Inventor： Nathaniel J. Meier ,  Brenton P. Van Leeuwen

IPC: G06F12/14 ,  G06F21/79 ,  G11C17/16 ,  G11C11/4074

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which security measures may be implemented to control access to a fuse array (or other secure features) of the memory devices based on a secure access key. In some cases, a customer may define and store a user-defined access key in the fuse array. In other cases, a manufacturer of the memory device may define a manufacturer-defined access key (e.g., an access key based on fuse identification (FID), a secret access key), where a host device coupled with the memory device may obtain the manufacturer-defined access key according to certain protocols. The memory device may compare an access key included in a command directed to the memory device with either the user-defined access key or the manufacturer-defined access key to determine whether to permit or prohibit execution of the command based on the comparison.

公开(公告)号：US20210103527A1

公开(公告)日：2021-04-08

申请号：US17124312

申请日：2020-12-16

Applicant: Micron Technology, Inc.

Inventor： Shea M. Morrison ,  Brenton P. Van Leeuwen ,  Blakely N. Frechette

IPC: G06F12/14 ,  G06F21/55 ,  G11C5/14 ,  G11C16/22

Abstract: Apparatuses and methods related to memory disablement for memory security. Disabling the memory for memory security can include, responsive to receiving a trigger signal, provide a voltage, which may be in excess of an operating or nominal voltage, to the access circuitry. The voltage may thus be sufficient to render the access circuitry inoperable for accessing data stored in the memory array.

公开(公告)号：US20240194256A1

公开(公告)日：2024-06-13

申请号：US18373490

申请日：2023-09-27

Applicant: Micron Technology, Inc.

Inventor： Brenton P. Van Leeuwen ,  Mingdong Cui ,  Fatma Arzum Simsek-Ege

IPC: G11C13/00

CPC classification number: G11C13/0028 ,  G11C13/0038

Abstract: Systems, methods and apparatus are provided for word line drivers for memory devices. For instance, an apparatus can include sets of word lines, each word line of the sets of word lines configured to access a respective set of one or more memory cells, sets of digit lines, where each word line couples a memory cell of the set of one or more memory cells with each digit line within the sets of digit lines, and a plurality of resistors coupled to the sets of word lines.

公开(公告)号：US20230289301A1

公开(公告)日：2023-09-14

申请号：US18198782

申请日：2023-05-17

Applicant: Micron Technology, Inc.

Inventor： Nathaniel J. Meier ,  Brenton P. Van Leeuwen

IPC: G06F12/14 ,  G11C11/4074 ,  G11C17/16 ,  G06F21/79

CPC classification number: G06F12/1433 ,  G06F12/1466 ,  G11C11/4074 ,  G11C17/16 ,  G06F21/79 ,  G06F2212/1052 ,  G06F3/0637

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which security measures may be implemented to control access to a fuse array (or other secure features) of the memory devices based on a secure access key. In some cases, a customer may define and store a user-defined access key in the fuse array. In other cases, a manufacturer of the memory device may define a manufacturer-defined access key (e.g., an access key based on fuse identification (FID), a secret access key), where a host device coupled with the memory device may obtain the manufacturer-defined access key according to certain protocols. The memory device may compare an access key included in a command directed to the memory device with either the user-defined access key or the manufacturer-defined access key to determine whether to permit or prohibit execution of the command based on the comparison.