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公开(公告)号：US11646206B2
公开(公告)日：2023-05-09
申请号：US17101950
申请日：2020-11-23
Applicant: Micron Technology, Inc.
Inventor： David Ross Economy , Brian Beatty , John Mark Meldrim , Yongjun Jeff Hu , Jordan D. Greenlee
CPC classification number: H01L21/02645 , C01G41/00 , C23C16/28 , H01L21/0257 , C01P2006/40
Abstract: Described are methods for forming a multilayer conductive structure for semiconductor devices. A seed layer is formed comprising a metal and an additional constituent that in combination with the metal inhibits nucleation of a fill layer of the metal formed over the seed layer. Tungsten may be doped or alloyed with silicon to form the seed layer, with a tungsten fill being formed over the seed layer.
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公开(公告)号：US20210183651A1
公开(公告)日：2021-06-17
申请号：US17101950
申请日：2020-11-23
Applicant: Micron Technology, Inc.
Inventor： David Ross Economy , Brian Beatty , John Mark Meldrim , Yongjun Jeff Hu , Jordan D. Greenlee
Abstract: Described are methods for forming a multilayer conductive structure for semiconductor devices. A seed layer is formed comprising a metal and an additional constituent that in combination with the metal inhibits nucleation of a fill layer of the metal formed over the seed layer. Tungsten may be doped or alloyed with silicon to form the seed layer, with a tungsten fill being formed over the seed layer.
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公开(公告)号：US20200211843A1
公开(公告)日：2020-07-02
申请号：US16235765
申请日：2018-12-28
Applicant: Micron Technology, Inc.
Inventor： David Ross Economy , Brian Beatty , John Mark Meldrim , Yongjun Jeff Hu , Jordan D. Greenlee
Abstract: Described are methods for forming a multilayer conductive structure for semiconductor devices. A seed layer is formed comprising a metal and an additional constituent that in combination with the metal inhibits nucleation of a fill layer of the metal formed over the seed layer. Tungsten may be doped or alloyed with silicon to form the seed layer, with a tungsten fill being formed over the seed layer.
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