Voltage switching in a memory device
    1.
    发明授权
    Voltage switching in a memory device 有权
    存储器件中的电压切换

    公开(公告)号:US08610490B2

    公开(公告)日:2013-12-17

    申请号:US13849586

    申请日:2013-03-25

    CPC classification number: G11C7/12 H03K3/35613 H03K19/018528

    Abstract: Voltage switches, memory devices, memory systems, and methods for switching are disclosed. One such voltage switch uses a pair of switch circuits coupled in series, each switch circuit being driven by a level shift circuit. Each switch circuit uses a group of series coupled transistors with a parallel control transistor where the number of transistors in each group may be determined by an expected switch input voltage and a maximum allowable voltage drop for each transistor. A voltage of a particular state of an enable signal is shifted up to the switch input voltage by the level shift circuits. The particular state of the enable signal turns on the voltage switch such that the switch output voltage is substantially equal to the switch input voltage.

    Abstract translation: 公开了电压开关,存储器件,存储器系统和用于切换的方法。 一个这样的电压开关使用串联耦合的一对开关电路,每个开关电路由电平移位电路驱动。 每个开关电路使用具有并联控制晶体管的一组串联耦合晶体管,其中每组中的晶体管数量可由每个晶体管的预期开关输入电压和最大允许电压降确定。 使能信号的特定状态的电压由电平移位电路移动到开关输入电压。 使能信号的特定状态使电压开关导通,使得开关输出电压基本上等于开关输入电压。

Patent Agency Ranking