公开(公告)号：US20140232008A1

公开(公告)日：2014-08-21

申请号：US14259313

申请日：2014-04-23

Applicant: Micron Technology, Inc.

Inventor： Justin B. Dorhout ,  Ranjan Khurana ,  David Swindler ,  Jianming Zhou

IPC: H01L23/528

CPC classification number: H01L23/528 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76816 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include a semiconductor construction having a pair of lines extending primarily along a first direction, and having a pair of contacts between the lines. The contacts are spaced from one another by a lithographic dimension, and are spaced from the lines by sub-lithographic dimensions. Some embodiments include a method of forming a semiconductor construction. Features are formed over a base. Each feature has a first type sidewall and a second type sidewall. The features are spaced from one another by gaps. Some of the gaps are first type gaps between first type sidewalls, and others of the gaps are second type gaps between second type sidewalls. Masking material is formed to selectively fill the first type gaps relative to the second type gaps. Excess masking material is removed to leave a patterned mask. A pattern is transferred from the patterned mask into the base.

Abstract translation: 一些实施例包括具有主要沿着第一方向延伸的一对线并且在线之间具有一对接触的半导体结构。 触点通过光刻尺寸彼此间隔开，并且通过亚光刻尺寸与线间隔开。 一些实施例包括形成半导体结构的方法。 特征形成在一个基地上。 每个特征具有第一类型侧壁和第二类型侧壁。 这些特征通过间隙彼此间隔开。 一些间隙是第一类型侧壁之间的第一类型间隙，而其它间隙是第二类型侧壁之间的第二类型间隙。 形成掩模材料以相对于第二类型间隙选择性地填充第一类型的间隙。 去除过量的掩模材料以留下图案化掩模。 图案从图案化掩模转移到基底中。

公开(公告)号：US09460998B2

公开(公告)日：2016-10-04

申请号：US14259313

申请日：2014-04-23

Applicant: Micron Technology, Inc.

Inventor： Justin B. Dorhout ,  Ranjan Khurana ,  David Swindler ,  Jianming Zhou

IPC: H01L23/52 ,  H01L23/528 ,  H01L21/033 ,  H01L21/311 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76816 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include a semiconductor construction having a pair of lines extending primarily along a first direction, and having a pair of contacts between the lines. The contacts are spaced from one another by a lithographic dimension, and are spaced from the lines by sub-lithographic dimensions. Some embodiments include a method of forming a semiconductor construction. Features are formed over a base. Each feature has a first type sidewall and a second type sidewall. The features are spaced from one another by gaps. Some of the gaps are first type gaps between first type sidewalls, and others of the gaps are second type gaps between second type sidewalls. Masking material is formed to selectively fill the first type gaps relative to the second type gaps. Excess masking material is removed to leave a patterned mask. A pattern is transferred from the patterned mask into the base.

Abstract translation: 一些实施例包括具有主要沿着第一方向延伸的一对线并且在线之间具有一对接触的半导体结构。 触点通过光刻尺寸彼此间隔开，并且通过亚光刻尺寸与线间隔开。 一些实施例包括形成半导体结构的方法。 特征形成在一个基地上。 每个特征具有第一类型侧壁和第二类型侧壁。 这些特征通过间隙彼此间隔开。 一些间隙是第一类型侧壁之间的第一类型间隙，而其它间隙是第二类型侧壁之间的第二类型间隙。 形成掩模材料以相对于第二类型间隙选择性地填充第一类型的间隙。 去除过量的掩模材料以留下图案化掩模。 图案从图案化掩模转移到基底中。