Method and apparatus for on-chip stress detection

    公开(公告)号:US11189536B2

    公开(公告)日:2021-11-30

    申请号:US16294469

    申请日:2019-03-06

    Abstract: A microelectronic chip device includes a semiconductor substrate and multiple on-chip strain sensors (OCSSs) constructed on the substrate at various locations of the substrate. The OCSSs may each include multiple piezoresistive devices configured to sense a strain at a location of the various locations and produce a strain signal representing the strain at that location. A strain measurement circuit may also be constructed on the semiconductor substrate and configured to measure strain parameters from the strain signals produced by the OCSSs. The strain parameters represent the strains at the various location. Values of the strain parameters can be used for analysis of mechanical stress on the chip device.

    METHOD AND APPARATUS FOR ON-CHIP STRESS DETECTION

    公开(公告)号:US20220084896A1

    公开(公告)日:2022-03-17

    申请号:US17534973

    申请日:2021-11-24

    Abstract: A microelectronic chip device includes a semiconductor substrate and multiple on-chip strain sensors (OCSSs) constructed on the substrate at various locations of the substrate. The OCSSs may each include multiple piezoresistive devices configured to sense a strain at a location of the various locations and produce a strain signal representing the strain at that location. A strain measurement circuit may also be constructed on the semiconductor substrate and configured to measure strain parameters from the strain signals produced by the OCSSs. The strain parameters represent the strains at the various location. Values of the strain parameters can be used for analysis of mechanical stress on the chip device.

    METHOD AND APPARATUS FOR ON-CHIP STRESS DETECTION

    公开(公告)号:US20200211914A1

    公开(公告)日:2020-07-02

    申请号:US16294469

    申请日:2019-03-06

    Abstract: A microelectronic chip device includes a semiconductor substrate and multiple on-chip strain sensors (OCSS s) constructed on the substrate at various locations of the substrate. The OCSSs may each include multiple piezoresistive devices configured to sense a strain at a location of the various locations and produce a strain signal representing the strain at that location. A strain measurement circuit may also be constructed on the semiconductor substrate and configured to measure strain parameters from the strain signals produced by the OCSSs. The strain parameters represent the strains at the various location. Values of the strain parameters can be used for analysis of mechanical stress on the chip device.

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