公开(公告)号：US10147727B2

公开(公告)日：2018-12-04

申请号：US15895587

申请日：2018-02-13

Applicant: Micron Technology, Inc.

Inventor： Jaydeb Goswami ,  Zailong Bian ,  Yushi Hu ,  Eric R. Blomiley ,  Jaydip Guha ,  Thomas Gehrke

IPC: H01L27/108 ,  H01L29/423 ,  H01L29/08 ,  H01L29/49 ,  H01L23/532 ,  H01L23/528

Abstract: Some embodiments include a conductive structure which has a first conductive material having a work function of at least 4.5 eV, and a second conductive material over and directly against the first conductive material. The second conductive material has a work function of less than 4.5 eV, and is shaped as an upwardly-opening container. The conductive structure includes a third conductive material within the upwardly-opening container shape of the second conductive material and directly against the second conductive material. The third conductive material is a different composition relative to the second conductive material. Some embodiments include wordlines, and some embodiments include transistors.

公开(公告)号：US20180175039A1

公开(公告)日：2018-06-21

申请号：US15895587

申请日：2018-02-13

Applicant: Micron Technology, Inc.

Inventor： Jaydeb Goswami ,  Zailong Bian ,  Yushi Hu ,  Eric R. Blomiley ,  Jaydip Guha ,  Thomas Gehrke

IPC: H01L27/108 ,  H01L29/423 ,  H01L23/532 ,  H01L29/08 ,  H01L29/49

CPC classification number: H01L27/10823 ,  H01L23/5283 ,  H01L23/53252 ,  H01L23/53261 ,  H01L23/53266 ,  H01L27/10876 ,  H01L27/10891 ,  H01L29/0847 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4966

Abstract: Some embodiments include a conductive structure which has a first conductive material having a work function of at least 4.5 eV, and a second conductive material over and directly against the first conductive material. The second conductive material has a work function of less than 4.5 eV, and is shaped as an upwardly-opening container. The conductive structure includes a third conductive material within the upwardly-opening container shape of the second conductive material and directly against the second conductive material. The third conductive material is a different composition relative to the second conductive material. Some embodiments include wordlines, and some embodiments include transistors.

公开(公告)号：US20180138182A1

公开(公告)日：2018-05-17

申请号：US15349808

申请日：2016-11-11

Applicant: Micron Technology, Inc.

Inventor： Jaydeb Goswami ,  Zailong Bian ,  Yushi Hu ,  Eric R. Blomiley ,  Jaydip Guha ,  Thomas Gehrke

IPC: H01L27/108 ,  H01L29/423 ,  H01L29/08 ,  H01L29/49 ,  H01L23/532

CPC classification number: H01L27/10823 ,  H01L23/5283 ,  H01L23/53252 ,  H01L23/53261 ,  H01L23/53266 ,  H01L27/10876 ,  H01L27/10891 ,  H01L29/0847 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4966

Abstract: Some embodiments include a conductive structure which has a first conductive material having a work function of at least 4.5 eV, and a second conductive material over and directly against the first conductive material. The second conductive material has a work function of less than 4.5 eV, and is shaped as an upwardly-opening container. The conductive structure includes a third conductive material within the upwardly-opening container shape of the second conductive material and directly against the second conductive material. The third conductive material is a different composition relative to the second conductive material. Some embodiments include wordlines, and some embodiments include transistors.

公开(公告)号：US09972628B1

公开(公告)日：2018-05-15

申请号：US15349808

申请日：2016-11-11

Applicant: Micron Technology, Inc.

Inventor： Jaydeb Goswami ,  Zailong Bian ,  Yushi Hu ,  Eric R. Blomiley ,  Jaydip Guha ,  Thomas Gehrke

IPC: H01L29/49 ,  H01L27/108 ,  H01L29/423 ,  H01L29/08 ,  H01L23/532

CPC classification number: H01L27/10823 ,  H01L23/5283 ,  H01L23/53252 ,  H01L23/53261 ,  H01L23/53266 ,  H01L27/10876 ,  H01L27/10891 ,  H01L29/0847 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4966

Abstract: Some embodiments include a conductive structure which has a first conductive material having a work function of at least 4.5 eV, and a second conductive material over and directly against the first conductive material. The second conductive material has a work function of less than 4.5 eV, and is shaped as an upwardly-opening container. The conductive structure includes a third conductive material within the upwardly-opening container shape of the second conductive material and directly against the second conductive material. The third conductive material is a different composition relative to the second conductive material. Some embodiments include wordlines, and some embodiments include transistors.