公开(公告)号：US20190131315A1

公开(公告)日：2019-05-02

申请号：US16132984

申请日：2018-09-17

Applicant: Micron Technology, Inc.

Inventor： Jie Sun ,  Zhenyu Lu ,  Roger W. Lindsay ,  Brian Cleereman ,  John Hopkins ,  Hongbin Zhu ,  Fatam Arzum Simsek-Ege ,  Prasanna Srinivasan ,  Purnima Narayanan

IPC: H01L27/11582 ,  H01L27/1157 ,  G11C16/04 ,  H01L27/11556 ,  H01L29/66 ,  H01L27/11524 ,  H01L29/788

Abstract: Methods for forming a string of memory cells, apparatuses having a string of memory cells, and systems are disclosed. One such method for forming a string of memory cells forms a source material over a substrate. A capping material may be formed over the source material. A select gate material may be formed over the capping material. A plurality of charge storage structures may be formed over the select gate material in a plurality of alternating levels of control gate and insulator materials. A first opening may be formed through the plurality of alternating levels of control gate and insulator materials, the select gate material, and the capping material. A channel material may be formed along the sidewall of the first opening. The channel material has a thickness that is less than a width of the first opening, such that a second opening is formed by the semiconductor channel material.