公开(公告)号：US20160336341A1

公开(公告)日：2016-11-17

申请号：US15221131

申请日：2016-07-27

Applicant: Micron Technology, Inc.

Inventor： Jie Sun ,  Zhenyu Lu ,  Roger W. Lindsay ,  Brian Cleereman ,  John Hopkins ,  Hongbin Zhu ,  Fatma Arzum Simsek-Ege ,  Prasanna Srinivasan ,  Purnima Narayanan

IPC: H01L27/115 ,  G11C16/04

CPC classification number: H01L27/11582 ,  G11C16/0483 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L29/66825 ,  H01L29/7889

Abstract: Methods for forming a string of memory cells, apparatuses having a string of memory cells, and systems are disclosed. One such method for forming a string of memory cells forms a source material over a substrate. A capping material may be formed over the source material. A select gate material may be formed over the capping material. A plurality of charge storage structures may be formed over the select gate material in a plurality of alternating levels of control gate and insulator materials. A first opening may be formed through the plurality of alternating levels of control gate and insulator materials, the select gate material, and the capping material. A channel material may be formed along the sidewall of the first opening. The channel material has a thickness that is less than a width of the first opening, such that a second opening is formed by the semiconductor channel material.

公开(公告)号：US09176385B2

公开(公告)日：2015-11-03

申请号：US14107767

申请日：2013-12-16

Applicant: Micron Technology, Inc.

Inventor： Jianming Zhou ,  Scott L. Light ,  David Kewley ,  Prasanna Srinivasan ,  Anton deVilliers

IPC: G03F1/44 ,  G03F7/20 ,  G03F1/26 ,  G03F1/32

CPC classification number: G03F7/20 ,  G03F1/26 ,  G03F1/32 ,  G03F7/70433 ,  G03F7/70883

Abstract: Methods of lithography, methods for forming patterning tools, and patterning tools are described. One such patterning tool include an active region that forms a first diffraction image on a lens when in use, and an inactive region that forms a second diffraction image on a lens when in use. The inactive region includes a pattern of phase shifting features formed in a substantially transparent material of the patterning tool. Patterning tools and methods, as described, can be used to compensate for lens distortion from effects such as localized heating.

Abstract translation: 描述了光刻方法，用于形成图案形成工具的方法和图案形成工具。 一种这样的图案形成工具包括在使用时在透镜上形成第一衍射图像的有源区域和在使用时在透镜上形成第二衍射图像的非活性区域。 非活性区域包括形成在图案形成工具的基本上透明的材料中的相移特征的图案。 如所描述的图案化工具和方法可用于补偿透镜失真，例如局部加热等影响。

公开(公告)号：US20150123189A1

公开(公告)日：2015-05-07

申请号：US14069574

申请日：2013-11-01

Applicant: Micron Technology, Inc.

Inventor： Jie Sun ,  Zhenyu Lu ,  Roger W. Lindsay ,  Brian Cleereman ,  John Hopkins ,  Hongbin Zhu ,  Fatma Arzum Simsek-Ege ,  Prasanna Srinivasan ,  Purnima Narayanan

IPC: H01L27/115

CPC classification number: H01L27/11582 ,  G11C16/0483 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L29/66825 ,  H01L29/7889

Abstract: Methods for forming a string of memory cells, apparatuses having a string of memory cells, and systems are disclosed. One such method for forming a string of memory cells forms a source material over a substrate. A capping material may be formed over the source material. A select gate material may be formed over the capping material. A plurality of charge storage structures may be formed over the select gate material in a plurality of alternating levels of control gate and insulator materials. A first opening may be formed through the plurality of alternating levels of control gate and insulator materials, the select gate material, and the capping material. A channel material may be formed along the sidewall of the first opening. The channel material has a thickness that is less than a width of the first opening, such that a second opening is formed by the semiconductor channel material.

Abstract translation: 公开了形成一串存储单元的方法，具有一串存储单元的装置和系统。 用于形成一串存储单元的一种这样的方法在衬底上形成源材料。 可以在源材料上形成封盖材料。 可以在封盖材料之上形成选择栅极材料。 多个电荷存储结构可以在选择栅极材料上以多个交替层级的控制栅极和绝缘体材料形成。 可以通过控制栅极和绝缘体材料，选择栅极材料和封盖材料的多个交替层级形成第一开口。 通道材料可以沿着第一开口的侧壁形成。 通道材料的厚度小于第一开口的宽度，使得第二开口由半导体沟道材料形成。

公开(公告)号：US10090317B2

公开(公告)日：2018-10-02

申请号：US15221131

申请日：2016-07-27

Applicant: Micron Technology, Inc.

Inventor： Jie Sun ,  Zhenyu Lu ,  Roger W. Lindsay ,  Brian Cleereman ,  John Hopkins ,  Hongbin Zhu ,  Fatma Arzum Simsek-Ege ,  Prasanna Srinivasan ,  Purnima Narayanan

IPC: H01L21/3205 ,  H01L27/11582 ,  H01L27/11556 ,  H01L27/11524 ,  H01L29/66 ,  H01L29/788 ,  G11C16/04 ,  H01L27/1157

Abstract: Methods for forming a string of memory cells, apparatuses having a string of memory cells, and systems are disclosed. One such method for forming a string of memory cells forms a source material over a substrate. A capping material may be formed over the source material. A select gate material may be formed over the capping material. A plurality of charge storage structures may be formed over the select gate material in a plurality of alternating levels of control gate and insulator materials. A first opening may be formed through the plurality of alternating levels of control gate and insulator materials, the select gate material, and the capping material. A channel material may be formed along the sidewall of the first opening. The channel material has a thickness that is less than a width of the first opening, such that a second opening is formed by the semiconductor channel material.

公开(公告)号：US20190131315A1

公开(公告)日：2019-05-02

申请号：US16132984

申请日：2018-09-17

Applicant: Micron Technology, Inc.

Inventor： Jie Sun ,  Zhenyu Lu ,  Roger W. Lindsay ,  Brian Cleereman ,  John Hopkins ,  Hongbin Zhu ,  Fatam Arzum Simsek-Ege ,  Prasanna Srinivasan ,  Purnima Narayanan

IPC: H01L27/11582 ,  H01L27/1157 ,  G11C16/04 ,  H01L27/11556 ,  H01L29/66 ,  H01L27/11524 ,  H01L29/788

Abstract: Methods for forming a string of memory cells, apparatuses having a string of memory cells, and systems are disclosed. One such method for forming a string of memory cells forms a source material over a substrate. A capping material may be formed over the source material. A select gate material may be formed over the capping material. A plurality of charge storage structures may be formed over the select gate material in a plurality of alternating levels of control gate and insulator materials. A first opening may be formed through the plurality of alternating levels of control gate and insulator materials, the select gate material, and the capping material. A channel material may be formed along the sidewall of the first opening. The channel material has a thickness that is less than a width of the first opening, such that a second opening is formed by the semiconductor channel material.

公开(公告)号：US09431410B2

公开(公告)日：2016-08-30

申请号：US14069574

申请日：2013-11-01

Applicant: Micron Technology, Inc.

Inventor： Jie Sun ,  Zhenyu Lu ,  Roger W. Lindsay ,  Brian Cleereman ,  John Hopkins ,  Hongbin Zhu ,  Fatma Arzum Simsek-Ege ,  Prasanna Srinivasan ,  Purnima Narayanan

IPC: H01L29/788 ,  H01L27/115 ,  H01L29/66

CPC classification number: H01L27/11582 ,  G11C16/0483 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L29/66825 ,  H01L29/7889

Abstract: Methods for forming a string of memory cells, apparatuses having a string of memory cells, and systems are disclosed. One such method for forming a string of memory cells forms a source material over a substrate. A capping material may be formed over the source material. A select gate material may be formed over the capping material. A plurality of charge storage structures may be formed over the select gate material in a plurality of alternating levels of control gate and insulator materials. A first opening may be formed through the plurality of alternating levels of control gate and insulator materials, the select gate material, and the capping material. A channel material may be formed along the sidewall of the first opening. The channel material has a thickness that is less than a width of the first opening, such that a second opening is formed by the semiconductor channel material.

Abstract translation: 公开了形成一串存储单元的方法，具有一串存储单元的装置和系统。 用于形成一串存储单元的一种这样的方法在衬底上形成源材料。 可以在源材料上形成封盖材料。 可以在封盖材料之上形成选择栅极材料。 多个电荷存储结构可以在选择栅极材料上以多个交替层级的控制栅极和绝缘体材料形成。 可以通过控制栅极和绝缘体材料，选择栅极材料和封盖材料的多个交替层级形成第一开口。 通道材料可以沿着第一开口的侧壁形成。 通道材料的厚度小于第一开口的宽度，使得第二开口由半导体沟道材料形成。

公开(公告)号：US20140106280A1

公开(公告)日：2014-04-17

申请号：US14107767

申请日：2013-12-16

Applicant: Micron Technology, Inc.

Inventor： Jianming Zhou ,  Scott L. Light ,  David Kewley ,  Prasanna Srinivasan ,  Anton deVilliers

IPC: G03F7/20

CPC classification number: G03F7/20 ,  G03F1/26 ,  G03F1/32 ,  G03F7/70433 ,  G03F7/70883

Abstract: Methods of lithography, methods for forming patterning tools, and patterning tools are described. One such patterning tool include an active region that forms a first diffraction image on a lens when in use, and an inactive region that forms a second diffraction image on a lens when in use. The inactive region includes a pattern of phase shifting features formed in a substantially transparent material of the patterning tool. Patterning tools and methods, as described, can be used to compensate for lens distortion from effects such as localized heating.

Abstract translation: 描述了光刻方法，用于形成图案形成工具的方法和图案形成工具。 一种这样的图案形成工具包括在使用时在透镜上形成第一衍射图像的有源区域和在使用时在透镜上形成第二衍射图像的非活性区域。 非活性区域包括形成在图案形成工具的基本上透明的材料中的相移特征的图案。 如所描述的图案化工具和方法可用于补偿透镜失真，例如局部加热等影响。