公开(公告)号：US20160104748A1

公开(公告)日：2016-04-14

申请号：US14970602

申请日：2015-12-16

Applicant: Micron Technology, Inc.

Inventor： Marcello Ravasio ,  Samuele Sciarrillo ,  Roberto Somaschini ,  Gabriel L. Donadio

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2481 ,  G11C5/063 ,  G11C13/0002 ,  G11C2213/71 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/1608 ,  H01L45/1666 ,  H01L45/1675

Abstract: The present disclosure includes memory cell array structures and methods of forming the same. One such array includes a stack structure comprising a memory cell between a first conductive material and a second conductive material. The memory cell can include a select element and a memory element. The array can also include an electrically inactive stack structure located at an edge of the stack structure.

公开(公告)号：US09773844B2

公开(公告)日：2017-09-26

申请号：US14970602

申请日：2015-12-16

Applicant: Micron Technology, Inc.

Inventor： Marcello Ravasio ,  Samuele Sciarrillo ,  Roberto Somaschini ,  Gabriel L. Donadio

IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00 ,  G11C5/06

CPC classification number: H01L27/2481 ,  G11C5/063 ,  G11C13/0002 ,  G11C2213/71 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/1608 ,  H01L45/1666 ,  H01L45/1675

Abstract: The present disclosure includes memory cell array structures and methods of forming the same. One such array includes a stack structure comprising a memory cell between a first conductive material and a second conductive material. The memory cell can include a select element and a memory element. The array can also include an electrically inactive stack structure located at an edge of the stack structure.

公开(公告)号：US09246100B2

公开(公告)日：2016-01-26

申请号：US13949315

申请日：2013-07-24

Applicant: Micron Technology, Inc.

Inventor： Marcello Ravasio ,  Samuele Sciarrillo ,  Roberto Somaschini ,  Gabriel L. Donadio

IPC: H01L45/00 ,  G11C5/06 ,  G11C13/00

CPC classification number: H01L27/2481 ,  G11C5/063 ,  G11C13/0002 ,  G11C2213/71 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/1608 ,  H01L45/1666 ,  H01L45/1675

Abstract: The present disclosure includes memory cell array structures and methods of forming the same. One such array includes a stack structure comprising a memory cell between a first conductive material and a second conductive material. The memory cell can include a select element and a memory element. The array can also include an electrically inactive stack structure located at an edge of the stack structure.

Abstract translation: 本公开包括存储单元阵列结构及其形成方法。 一种这样的阵列包括堆叠结构，其包括在第一导电材料和第二导电材料之间的存储单元。 存储器单元可以包括选择元件和存储元件。 阵列还可以包括位于堆叠结构的边缘处的电惰性堆叠结构。

公开(公告)号：US20150029775A1

公开(公告)日：2015-01-29

申请号：US13949315

申请日：2013-07-24

Applicant: Micron Technology, Inc.

Inventor： Marcello Ravasio ,  Samuele Sciarrillo ,  Roberto Somaschini ,  Gabriel L. Donadio

IPC: G11C5/06 ,  G11C13/00 ,  H01L45/00

CPC classification number: H01L27/2481 ,  G11C5/063 ,  G11C13/0002 ,  G11C2213/71 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/1608 ,  H01L45/1666 ,  H01L45/1675

Abstract: The present disclosure includes memory cell array structures and methods of forming the same. One such array includes a stack structure comprising a memory cell between a first conductive material and a second conductive material. The memory cell can include a select element and a memory element. The array can also include an electrically inactive stack structure located at an edge of the stack structure.

Abstract translation: 本公开内容包括存储单元阵列结构及其形成方法。 一种这样的阵列包括堆叠结构，其包括在第一导电材料和第二导电材料之间的存储单元。 存储器单元可以包括选择元件和存储元件。 阵列还可以包括位于堆叠结构的边缘处的电惰性堆叠结构。