Column repair in memory
    2.
    发明授权

    公开(公告)号:US10418123B2

    公开(公告)日:2019-09-17

    申请号:US16119856

    申请日:2018-08-31

    Abstract: Apparatuses and methods related to column repair in memory are described. The sensing circuitry of an apparatus can include a first sensing component, a second sensing component, and a third sensing component. The second sensing component can include a defective sense amplifier that is column repaired. The apparatus can include a controller configured to use the sensing circuitry to shift data from the first sensing component to the third sensing component by transferring the data through the second sensing component. The second sensing component can be physically located between the first sensing component and the third sensing component.

    COLUMN REPAIR IN MEMORY
    3.
    发明申请

    公开(公告)号:US20180374559A1

    公开(公告)日:2018-12-27

    申请号:US16119856

    申请日:2018-08-31

    CPC classification number: G11C29/702 G11C29/785 G11C29/81 G11C29/848

    Abstract: The present disclosure includes apparatuses and methods related to column repair in memory. An example apparatus can include sensing circuitry. The sensing circuitry can include a first sensing component, a second sensing component, and a third sensing component. The second sensing component can include a defective sense amplifier that is column repaired. The apparatus can include a controller configured to use the sensing circuitry to shift data from the first sensing component to the third sensing component by transferring the data through the second sensing component. The second sensing component can be physically located between the first sensing component and the third sensing component.

    Shifting data in sensing circuitry

    公开(公告)号:US10789996B2

    公开(公告)日:2020-09-29

    申请号:US16360685

    申请日:2019-03-21

    Abstract: The present disclosure includes apparatuses and methods related to shifting data. An example apparatus comprises sensing circuitry including a sense amplifier and a compute component having a first storage location and a second storage location associated therewith. A controller is coupled to the sensing circuitry. The controller is configured to control an amount of power associated with shifting a data value stored in the first storage location to the second storage location by applying a charge sharing operation.

    Shifting data in sensing circuitry

    公开(公告)号:US10242722B2

    公开(公告)日:2019-03-26

    申请号:US15978578

    申请日:2018-05-14

    Abstract: The present disclosure includes apparatuses and methods related to shifting data. An example apparatus comprises sensing circuitry including a sense amplifier and a compute component having a first storage location and a second storage location associated therewith. A controller is coupled to the sensing circuitry. The controller is configured to control an amount of power associated with shifting a data value stored in the first storage location to the second storage location by applying a charge sharing operation.

    Column repair in memory
    9.
    发明授权

    公开(公告)号:US10068664B1

    公开(公告)日:2018-09-04

    申请号:US15600409

    申请日:2017-05-19

    CPC classification number: G11C29/702 G11C29/785 G11C29/81 G11C29/848

    Abstract: Apparatuses and methods related to column repair in memory are described. An apparatus can include sensing circuitry. The sensing circuitry can include a first sensing component, a second sensing component, and a third sensing component. The second sensing component can include a defective sense amplifier that is column repaired. The apparatus can include a controller configured to use the sensing circuitry to shift data from the first sensing component to the third sensing component by transferring the data through the second sensing component. The second sensing component can be physically located between the first sensing component and the third sensing component.

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