公开(公告)号：US20240147713A1

公开(公告)日：2024-05-02

申请号：US18394273

申请日：2023-12-22

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Sidhartha Gupta ,  Kar Wui Thong ,  Harsh Narendarakumar Jain

IPC: H10B41/27 ,  G11C5/06 ,  H01L29/66 ,  H01L29/78 ,  H10B43/27

CPC classification number: H10B41/27 ,  G11C5/06 ,  H01L29/66666 ,  H01L29/7827 ,  H10B43/27

Abstract: A method of forming a microelectronic device including a first stack structure comprising alternating levels of insulative structures and other insulative structures, forming strings of memory cells through the first stack structure, forming a second stack structure over the first stack structure, based at least partially on observed amount of pillar bending within the first stack structure, forming a first tailored reticle specific to the observed amount of pillar bending, utilizing the first tailored reticle to form openings extending through the second stack structure and over some of the strings of memory cells, wherein centers of the openings over the strings of memory cells are at least substantially aligned with the centers of uppermost surfaces of the strings of memory cells in a direction of the observed pillar bending, and forming upper pillars extending through the second stack structure and over some of the strings of memory cells.