公开(公告)号：US10720569B2

公开(公告)日：2020-07-21

申请号：US16434634

申请日：2019-06-07

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Witold Kula ,  Manzar Siddik ,  Suresh Ramarajan ,  Johnathan D. Harms

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  G11C11/16 ,  H01L27/22

Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.