公开(公告)号：US20220029015A1

公开(公告)日：2022-01-27

申请号：US16936983

申请日：2020-07-23

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Kevin J. Torek ,  Kamal M. Karda ,  Yunfei Gao ,  Kamal K. Muthukrishnan

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/06 ,  H01L29/66 ,  H01L21/764 ,  H01L21/8234 ,  H01L27/088

Abstract: An apparatus includes at least one vertical transistor having a channel region. The channel region includes an upper region having a first width and a lower region below the upper region and having a second width smaller than the first width. The upper region defines at least one overhang portion extending laterally beyond the lower region. The at least one vertical transistor further includes gate electrodes at least partially vertically beneath the at least one overhang portion of the upper region of the channel region. Additional apparatuses and related systems and methods are also disclosed.

公开(公告)号：US11908932B2

公开(公告)日：2024-02-20

申请号：US16936983

申请日：2020-07-23

Applicant: Micron Technology, Inc.

Inventor： Fatma Arzum Simsek-Ege ,  Kevin J. Torek ,  Kamal M. Karda ,  Yunfei Gao ,  Kamal K. Muthukrishnan

IPC: H01L29/78 ,  H01L29/10 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L21/764 ,  H01L29/66

CPC classification number: H01L29/7827 ,  H01L21/764 ,  H01L21/823481 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/0649 ,  H01L29/1037 ,  H01L29/66666

Abstract: An apparatus includes at least one vertical transistor having a channel region. The channel region includes an upper region having a first width and a lower region below the upper region and having a second width smaller than the first width. The upper region defines at least one overhang portion extending laterally beyond the lower region. The at least one vertical transistor further includes gate electrodes at least partially vertically beneath the at least one overhang portion of the upper region of the channel region. Additional apparatuses and related systems and methods are also disclosed.