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公开(公告)号:US20220029015A1
公开(公告)日:2022-01-27
申请号:US16936983
申请日:2020-07-23
Applicant: Micron Technology, Inc.
Inventor: Fatma Arzum Simsek-Ege , Kevin J. Torek , Kamal M. Karda , Yunfei Gao , Kamal K. Muthukrishnan
IPC: H01L29/78 , H01L29/10 , H01L29/06 , H01L29/66 , H01L21/764 , H01L21/8234 , H01L27/088
Abstract: An apparatus includes at least one vertical transistor having a channel region. The channel region includes an upper region having a first width and a lower region below the upper region and having a second width smaller than the first width. The upper region defines at least one overhang portion extending laterally beyond the lower region. The at least one vertical transistor further includes gate electrodes at least partially vertically beneath the at least one overhang portion of the upper region of the channel region. Additional apparatuses and related systems and methods are also disclosed.
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公开(公告)号:US11908932B2
公开(公告)日:2024-02-20
申请号:US16936983
申请日:2020-07-23
Applicant: Micron Technology, Inc.
Inventor: Fatma Arzum Simsek-Ege , Kevin J. Torek , Kamal M. Karda , Yunfei Gao , Kamal K. Muthukrishnan
IPC: H01L29/78 , H01L29/10 , H01L27/088 , H01L21/8234 , H01L29/06 , H01L21/764 , H01L29/66
CPC classification number: H01L29/7827 , H01L21/764 , H01L21/823481 , H01L21/823487 , H01L27/088 , H01L29/0649 , H01L29/1037 , H01L29/66666
Abstract: An apparatus includes at least one vertical transistor having a channel region. The channel region includes an upper region having a first width and a lower region below the upper region and having a second width smaller than the first width. The upper region defines at least one overhang portion extending laterally beyond the lower region. The at least one vertical transistor further includes gate electrodes at least partially vertically beneath the at least one overhang portion of the upper region of the channel region. Additional apparatuses and related systems and methods are also disclosed.
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