公开(公告)号：US20130105937A1

公开(公告)日：2013-05-02

申请号：US13725915

申请日：2012-12-21

Applicant: Micron Technology, Inc.

Inventor： Ardavan Niroomand ,  Baosuo Zhou ,  Ramakanth Alapati

IPC: H01L27/04

CPC classification number: H01L27/04 ,  H01L21/0338 ,  H01L21/3088 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabricating a semiconductor device comprises patterning a layer of photoresist material to form a plurality of mandrels. The method further comprises depositing an oxide material over the plurality of mandrels by an atomic layer deposition (ALD) process. The method further comprises anisotropically etching the oxide material from exposed horizontal surfaces. The method further comprises selectively etching photoresist material.

Abstract translation: 一种用于制造半导体器件的方法包括对一层光致抗蚀剂材料进行构图以形成多个心轴。 该方法还包括通过原子层沉积（ALD）工艺在多个心轴上沉积氧化物材料。 该方法还包括从暴露的水平表面各向异性地蚀刻氧化物材料。 该方法还包括选择性地蚀刻光刻胶材料。

公开(公告)号：US09184159B2

公开(公告)日：2015-11-10

申请号：US13725915

申请日：2012-12-21

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Ardavan Niroomand ,  Baosuo Zhou ,  Ramakanth Alapati

IPC: H01L21/311 ,  H01L27/04 ,  H01L21/033 ,  H01L21/308

CPC classification number: H01L27/04 ,  H01L21/0338 ,  H01L21/3088 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabricating a semiconductor device comprises patterning a layer of photoresist material to form a plurality of mandrels. The method further comprises depositing an oxide material over the plurality of mandrels by an atomic layer deposition (ALD) process. The method further comprises anisotropically etching the oxide material from exposed horizontal surfaces. The method further comprises selectively etching photoresist material.

Abstract translation: 一种用于制造半导体器件的方法包括对一层光致抗蚀剂材料进行图案化以形成多个心轴。 该方法还包括通过原子层沉积（ALD）工艺在多个心轴上沉积氧化物材料。 该方法还包括从暴露的水平表面各向异性地蚀刻氧化物材料。 该方法还包括选择性地蚀刻光刻胶材料。