公开(公告)号：US11989228B2

公开(公告)日：2024-05-21

申请号：US17526121

申请日：2021-11-15

Applicant: Micron Technology, Inc.

Inventor： Jeremy M. Hirst ,  Shanky K. Jain ,  Hernan A. Castro ,  Richard K Dodge ,  William A. Melton

IPC: G06F16/587 ,  G06F16/21 ,  G11C11/56 ,  G11C13/00

CPC classification number: G06F16/587 ,  G06F16/219 ,  G11C11/5614 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2213/77

Abstract: The present disclosure includes apparatuses, methods, and systems for multi-state programming of memory cells. An embodiment includes a memory having a plurality of memory cells, and circuitry configured to program a memory cell of the plurality of memory cells to one of a plurality of possible data states by applying a voltage pulse to the memory cell, determining the memory cell snaps back in response to the applied voltage pulse, turning off a current to the memory cell upon determining the memory cell snaps back, and applying a number of additional voltage pulses to the memory cell after turning off the current to the memory cell.