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    Memory arrays and methods used in forming a memory array comprising strings of memory cells
    2.
    发明授权
    Memory arrays and methods used in forming a memory array comprising strings of memory cells 有权

    公开(公告)号：US11121144B2

    公开(公告)日：2021-09-14

    申请号：US16682544

    申请日：2019-11-13

    Applicant: Micron Technology, Inc.

    Inventor： Bharat Bhushan ,  David Daycock ,  Subramanian Krishnan ,  Leroy Ekarista Wibowo

    IPC: H01L27/11556 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11573 ,  H01L21/311 ,  H01L21/3213 ,  H01L27/11526 ,  H01L27/11565 ,  H01L27/11519

    Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating first tiers and second tiers. First insulator material is above the stack. The first insulator material comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Channel-material strings are in and upwardly project from an uppermost material that is directly above the stack. Conducting material is directly against laterally-inner sides of individual of the upwardly-projecting channel-material strings and project upwardly from the individual upwardly-projecting channel-material strings. A ring comprising insulating material is formed individually circumferentially about the upwardly-projecting conducting material. Second insulator material is formed above the first insulator material, the ring, and the upwardly-projecting conducting material. The first and second insulator materials comprise different compositions relative one another. Conductive vias are formed in the second insulator material that are individually directly electrically coupled to the individual channel-material strings through the upwardly-projecting conducting material. Other embodiments, including structure, are disclosed.

    Memory Arrays And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
    3.
    发明申请
    Memory Arrays And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells 有权

    公开(公告)号：US20210143164A1

    公开(公告)日：2021-05-13

    申请号：US16682544

    申请日：2019-11-13

    Applicant: Micron Technology, Inc.

    Inventor： Bharat Bhushan ,  David Daycock ,  Subramanian Krishnan ,  Leroy Ekarista Wibowo

    IPC: H01L27/11556 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11526 ,  H01L27/11573 ,  H01L21/311 ,  H01L21/3213

    Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating first tiers and second tiers. First insulator material is above the stack. The first insulator material comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Channel-material strings are in and upwardly project from an uppermost material that is directly above the stack. Conducting material is directly against laterally-inner sides of individual of the upwardly-projecting channel-material strings and project upwardly from the individual upwardly-projecting channel-material strings. A ring comprising insulating material is formed individually circumferentially about the upwardly-projecting conducting material. Second insulator material is formed above the first insulator material, the ring, and the upwardly-projecting conducting material. The first and second insulator materials comprise different compositions relative one another. Conductive vias are formed in the second insulator material that are individually directly electrically coupled to the individual channel-material strings through the upwardly-projecting conducting material. Other embodiments, including structure, are disclosed.

    Memory Arrays And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells
    4.
    发明申请
    Memory Arrays And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells 有权

    公开(公告)号：US20210375902A1

    公开(公告)日：2021-12-02

    申请号：US17396952

    申请日：2021-08-09

    Applicant: Micron Technology, Inc.

    Inventor： Bharat Bhushan ,  David Daycock ,  Subramanian Krishnan ,  Leroy Ekarista Wibowo

    IPC: H01L27/11556 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11573 ,  H01L21/311 ,  H01L21/3213 ,  H01L27/11526

    Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating first tiers and second tiers. First insulator material is above the stack. The first insulator material comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Channel-material strings are in and upwardly project from an uppermost material that is directly above the stack. Conducting material is directly against laterally-inner sides of individual of the upwardly-projecting channel-material strings and project upwardly from the individual upwardly-projecting channel-material strings. A ring comprising insulating material is formed individually circumferentially about the upwardly-projecting conducting material. Second insulator material is formed above the first insulator material, the ring, and the upwardly-projecting conducting material. The first and second insulator materials comprise different compositions relative one another. Conductive vias are formed in the second insulator material that are individually directly electrically coupled to the individual channel-material strings through the upwardly-projecting conducting material. Other embodiments, including structure, are disclosed.

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