DIGIT LINE / CELL PLATE ISOLATION

    公开(公告)号:US20240407154A1

    公开(公告)日:2024-12-05

    申请号:US18677457

    申请日:2024-05-29

    Abstract: A variety of applications can include an apparatus having a memory device including digit lines isolated from each other by filling an area directly under the digit line with a dielectric material. The dielectric material can be any insulating material such as oxides or nitrides. The provision of the area directly under each digit line can be accomplished without etching out an entire layer of epitaxially grown regions for the memory cells vertically stacked in a three-dimensional array. In a three-dimensional DRAM, metal plates for capacitors can be isolated in a manner similar to the isolation of digit lines. Such processing can be scalable, which may allow for a three-dimensional DRAM to have hundreds memory cell tiers.

    ARTIFICIAL INTELLIGENCE SYSTEM ON AN ELECTRONIC DEVICE

    公开(公告)号:US20230207099A1

    公开(公告)日:2023-06-29

    申请号:US17649102

    申请日:2022-01-27

    Abstract: Methods, systems, and devices for an artificial intelligence system on an electronic device are described. An application on an electronic device may user data from the one or more applications of the electronic device and use the user data to determine criteria for a personalized output for a user. The application may use an artificial intelligence engine to determine the personalized output for the user by applying to the criteria weighting factors that are associated with priority levels for different categories of the criteria. The application may then select items for the user that are in accordance with the personalized output and that are based on the criteria for the personalized output and the priority levels for the different categories of the criteria.

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