公开(公告)号：US20140197484A1

公开(公告)日：2014-07-17

申请号：US14217844

申请日：2014-03-18

Applicant: Micron Technology, Inc.

Inventor： Venkatesan Anathan ,  Sanh D. Tang

IPC: H01L29/78

CPC classification number: H01L29/7827 ,  H01L29/42376 ,  H01L29/4966 ,  H01L29/66621

Abstract: A recessed access device having a gate electrode formed of two or more gate materials having different work functions may reduce the gate-induced drain leakage current losses from the recessed access device. The gate electrode may include a first gate material having a high work function disposed in a bottom portion of the recessed access device and a second gate material having a lower work function disposed over the first gate material and in an upper portion of the recessed access device.

Abstract translation: 具有由具有不同功函数的两个或多个栅极材料形成的栅电极的凹陷存取装置可以减小来自凹陷存取装置的栅极引起的漏极漏电流损耗。 栅电极可以包括具有设置在凹陷入口装置的底部中的高功函的第一栅极材料和具有设置在第一栅极材料上的下功函数的第二栅极材料以及凹陷入口装置的上部 。

公开(公告)号：US20130113040A1

公开(公告)日：2013-05-09

申请号：US13723564

申请日：2012-12-21

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Venkatesan Anathan

IPC: H01L29/78

CPC classification number: H01L29/7827 ,  H01L21/845 ,  H01L27/108 ,  H01L27/10826 ,  H01L27/10876 ,  H01L27/10879 ,  H01L27/1211 ,  H01L29/4236 ,  H01L29/66621 ,  H01L29/66795 ,  H01L29/7841 ,  H01L29/7851

Abstract: A method for forming an opening within a semiconductor material comprises forming a neck portion, a rounded portion below the neck portion and, in some embodiments, a protruding portion below the rounded portion. This opening may be filled with a conductor, a dielectric, or both. Embodiments to form a transistor gate, shallow trench isolation, and an isolation material separating a transistor source and drain are disclosed. Device structures formed by the method are also described.

Abstract translation: 在半导体材料中形成开口的方法包括在颈部下方形成颈部，圆形部分，在一些实施例中，在圆形部分下方形成突出部分。 该开口可以填充有导体，电介质或两者。 公开了形成晶体管栅极，浅沟槽隔离以及分离晶体管源极和漏极的隔离材料的实施例。 还描述了通过该方法形成的器件结构。

公开(公告)号：US09543433B2

公开(公告)日：2017-01-10

申请号：US14217844

申请日：2014-03-18

Applicant: Micron Technology, Inc.

Inventor： Venkatesan Anathan ,  Sanh D. Tang

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/7827 ,  H01L29/42376 ,  H01L29/4966 ,  H01L29/66621

Abstract: A recessed access device having a gate electrode formed of two or more gate materials having different work functions may reduce the gate-induced drain leakage current losses from the recessed access device. The gate electrode may include a first gate material having a high work function disposed in a bottom portion of the recessed access device and a second gate material having a lower work function disposed over the first gate material and in an upper portion of the recessed access device.

Abstract translation: 具有由具有不同功函数的两个或多个栅极材料形成的栅电极的凹陷存取装置可以减小来自凹陷存取装置的栅极引起的漏极漏电流损耗。 栅电极可以包括具有设置在凹陷入口装置的底部中的高功函的第一栅极材料和具有设置在第一栅极材料上的下功函数的第二栅极材料以及凹陷入口装置的上部 。

公开(公告)号：US08592897B2

公开(公告)日：2013-11-26

申请号：US13723564

申请日：2012-12-21

Applicant: Micron Technology, Inc.

Inventor： Venkatesan Anathan

IPC: H01L29/78

CPC classification number: H01L29/7827 ,  H01L21/845 ,  H01L27/108 ,  H01L27/10826 ,  H01L27/10876 ,  H01L27/10879 ,  H01L27/1211 ,  H01L29/4236 ,  H01L29/66621 ,  H01L29/66795 ,  H01L29/7841 ,  H01L29/7851

Abstract: A method for forming an opening within a semiconductor material comprises forming a neck portion, a rounded portion below the neck portion and, in some embodiments, a protruding portion below the rounded portion. This opening may be filled with a conductor, a dielectric, or both. Embodiments to form a transistor gate, shallow trench isolation, and an isolation material separating a transistor source and drain are disclosed. Device structures formed by the method are also described.