公开(公告)号：US20240357809A1

公开(公告)日：2024-10-24

申请号：US18637129

申请日：2024-04-16

Applicant: Micron Technology, Inc.

Inventor： Zeyar Lin Aung ,  Kaiming Luo ,  Saurabh Jagdishbhai Kasodariya ,  Sumeet C. Pandey ,  Brittany L. Kohoutek ,  Yuwei Ma ,  Kyle A. Ritter

IPC: H10B43/20

CPC classification number: H10B43/20

Abstract: Methods, systems, and devices for support structures for tier deflection in a memory system are described. The memory system may include a word line contact that extends through a stack of materials and lands on a tier of a word line. The word line contact may be between four support structures that form a diamond around the word line contact. Two support structures that form opposite vertices of the diamond may align centrally with the word line contact in a lateral direction and two other support structures that form opposite vertices of the diamond may align centrally with the word line contact in a longitudinal direction.