公开(公告)号：US20240357809A1

公开(公告)日：2024-10-24

申请号：US18637129

申请日：2024-04-16

Applicant: Micron Technology, Inc.

Inventor： Zeyar Lin Aung ,  Kaiming Luo ,  Saurabh Jagdishbhai Kasodariya ,  Sumeet C. Pandey ,  Brittany L. Kohoutek ,  Yuwei Ma ,  Kyle A. Ritter

IPC: H10B43/20

CPC classification number: H10B43/20

Abstract: Methods, systems, and devices for support structures for tier deflection in a memory system are described. The memory system may include a word line contact that extends through a stack of materials and lands on a tier of a word line. The word line contact may be between four support structures that form a diamond around the word line contact. Two support structures that form opposite vertices of the diamond may align centrally with the word line contact in a lateral direction and two other support structures that form opposite vertices of the diamond may align centrally with the word line contact in a longitudinal direction.

公开(公告)号：US20230397418A1

公开(公告)日：2023-12-07

申请号：US17805167

申请日：2022-06-02

Applicant: Micron Technology, Inc.

Inventor： Zhiqiang Teo ,  Chun Wei Ee ,  Anson Lin ,  Yuwei Ma ,  Martin J. Barclay ,  John D. Hopking ,  Jordan D. Greenlee

IPC: H01L27/11582

CPC classification number: H01L27/11582

Abstract: A microelectronic device comprises lateral contact structures overlying a source structure and comprising conductive material, a cap material overlying the lateral contact structures and comprising implant regions therein, a stack structure overlying the cap material and comprising a vertically alternating sequence of insulative structures and conductive structures arranged in tiers, and pillars vertically extending through the stack structure and into the source structure. The pillars individually comprise semiconductive channel material in physical contact with the lateral contact structures. The microelectronic device comprises filled slot structures vertically extending at least through the stack structure and the cap material. The filled slot structures are positioned within horizontal areas of the implant regions of the cap material. Related memory devices, electronic systems, and methods of forming the microelectronic devices are also described.