摘要:
The present invention relates to ferromagnetic particles capable of exhibiting a high purity and excellent magnetic properties from the industrial viewpoints and a process for producing the ferromagnetic particles, and also provides an anisotropic magnet, a bonded magnet and a compacted magnet which are obtained by using the ferromagnetic particles. The ferromagnetic particles comprising an Fe16N2 compound phase in an amount of not less than 80% as measured by Mössbauer spectrum and each having an outer shell in which FeO is present in the form of a film having a thickness of not more than 5 nm according to the present invention can be produced by subjecting iron oxide or iron oxyhydroxide having an average major axis diameter of 40 to 5000 nm and an aspect ratio (major axis diameter/minor axis diameter) of 1 to 200 as a starting material to dispersing treatment to prepare aggregated particles; subjecting the iron compound particles passed through a mesh to hydrogen reducing treatment at a temperature of 160 to 420° C.; and then subjecting the resulting particles to nitridation treatment at a temperature of 130 to 170° C.
摘要翻译:本发明涉及从工业观点出发具有高纯度和优异磁特性的铁磁性颗粒以及制造铁磁性颗粒的方法,并且还提供了各向异性磁体,粘结磁体和压实磁体,它们通过使用 铁磁颗粒。 所述铁磁性粒子包含通过Mössbauer光谱测定的不小于80%的Fe 16 N 2化合物相,并且每个具有外壳,其中FeO以厚度不超过5nm的膜的形式存在,根据 本发明可以通过使平均长轴直径为40〜5000nm,长径比(长轴径/短轴直径)为1〜200的氧化铁或羟基氧化铁作为起始原料进行分散处理而制备 聚集颗粒; 使通过网的铁化合物颗粒在160〜420℃的温度下进行氢还原处理。 然后在130〜170℃的温度下对得到的粒子进行氮化处理。
摘要:
An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The free layer is located below the magnetic pinned layer. The free layer is oriented in a (001) crystal plane, the spacer layer is formed and oriented in a (001) crystal plane on the (001) crystal plane of the free layer. Therefore, in a low resistance area where an area resistivity (AR) of the MR element is, for example, lower than 0.3 Ω·μm2, an MR element that has a large variation of a resistance is obtained.
摘要:
In a perpendicular magnetic recording medium in which at least a soft magnetic underlayer, an orientation control layer, a magnetic recording layer and a protective layer are formed on a non-magnetic substrate in order from the bottom, the orientation control layer has a laminated structure of two or more layers including an intermediate layer and a seed layer which is disposed closer to the non-magnetic substrate than the intermediate layer. The seed layer includes two or more kinds of elements having a face-centered cubic structure, has face-centered cubic (111) plane crystals oriented in a direction perpendicular to a substrate surface, and has a pseudo-hexagonal structure.
摘要:
According to one embodiment, a multilayered underlayer including a first underlayer containing Cu aligned in a (111) plane and a second underlayer formed on the Cu underlayer and containing Cu and nitrogen as main components is formed.
摘要:
A magnetic recording medium comprising a substrate, at least one soft magnetic underlayer formed on the substrate, a perpendicular magnetic recording layer formed on the soft magnetic underlayer, and a protective layer formed on the perpendicular magnetic recording layer, is provided wherein the perpendicular magnetic recording layer is comprised of a primary recording layer, a non-magnetic intermediate layer and an auxiliary layer; the primary recording layer comprises magnetic crystal grains and grain boundary portions surrounding the magnetic crystal grains, and has a perpendicular magnetic anisotropy; the auxiliary layer has a negative magneto crystalline anisotropy; and the non-magnetic intermediate layer is formed between the primary recording layer and the auxiliary layer and comprises at least one metal selected from Ru, Rh and Ir, or at least one alloy thereof. This magnetic recording medium exhibits high heat resistance and good recording/reproducing characteristics, and enables a high recording density.
摘要:
An organic layer capable of forming surface areas having an adsorption property different from that of a periphery due to the chemical change of a surface functional group is formed on a board. The surface of the organic layer is patterned and oxidized by a scanning probe microscope to form an array pattern in which small sections for adsorbing nanoparticles are arranged. Then, nanoparticle dispersed solution is applied to the organic layer having the array pattern or the organic layer is dipped in the nanoparticle dispersed solution to form a particle layer on the organic layer. At this time, the nanoparticles in the nanoparticle dispersed solution are respectively fixed only onto the small sections. Therefore, a nanoparticle array on which groups of nanoparticles are arranged in an array can be obtained. Thus, the nanoparticle array on which the groups of the nanoscale particles are arranged on the board is efficiently formed.
摘要:
The present invention provides a magnetic recording medium capable of recording or reproducing high-density information by reducing the grain size of a perpendicular magnetic recording layer and improving vertical orientation, a method of manufacturing the same, and a magnetic recording/reproducing apparatus. The perpendicular magnetic recording medium includes: a non-magnetic substrate; and at least an soft magnetic layer, an under layer, an intermediate layer, and a perpendicular magnetic recording film that are formed on the non-magnetic substrate. At least one layer of the intermediate layer is made of an alloy material of an element having an fcc structure and an element having a bcc structure or an hcp structure, and has both a crystal structure having (111) orientation and an irregular layer lattice (stacking fault) caused by a mixture of the fcc structure and the bcc structure. The at least one layer of the intermediate layer is made of an alloy material of at least one element that is selected from a group composed of Pt, Ir, Pd, Au, Ni, and Co, which is a main ingredient, and has the fcc structure, and an element having the bcc structure or the hcp structure.
摘要:
In the magnetic thin film, a magnetization direction of a ferromagnetic layer, e.g., a pinned layer, can be securely fixed. The magnetic thin film comprises: an antiferromagnetic layer; and the ferromagnetic layer. The antiferromagnetic layer is composed of a manganic antiferromagnetic material, and a manganese (Mn) layer is formed between the antiferromagnetic layer and the ferromagnetic layer.
摘要:
The invention provides a perpendicular magnetic recording medium in which the recording density is greatly increased with little deviation of the crystal structure. A perpendicular magnetic recording medium has at least a soft magnetic under layer, an orientation control layer, a perpendicular magnetic layer, and a protective layer, which are formed on a nonmagnetic substrate, the orientation control layer consisting of a plurality of layers including a seed layer and an intermediate layer from the substrate side. Preferably, the seed layer and the intermediate layer each have a hexagonal close-packed (hcp) structure, and the average grain size of the seed layer is between 8 nm and 20 nm. The main component of the seed layer is preferably Mg, and the main component of the intermediate layer is preferably Ru.
摘要:
A vertical magnetic recording medium has a low-noise characteristic compared to media of a permalloy or sendust crystalline material, including a high-flatness soft magnetic backing layer, and enabling recording/reproduction of information at high recording density, a magnetic recorder provided with the vertical magnetic recording medium, a vertical magnetic recording medium manufacturing method and apparatus. The vertical magnetic recording medium has a multilayer structure on a substrate, in which a soft magnetic backing layer, a vertical recording layer of a ferromagnetic body, and a protective layer are formed. The soft magnetic backing layer is formed of an FeSiAlN film of a soft magnetic material. The atom % of each element of Fe, Si, Al, and N of the FeSiAlN film can be changed by changing the flow rate of N2 gas in a mixture gas of N2 gas and Ar gas introduced into the chamber.