公开(公告)号：US07923386B2

公开(公告)日：2011-04-12

申请号：US12560941

申请日：2009-09-16

申请人： Mihaela Balseanu ,  Mei-yee Shek ,  Li-Qun Xia ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Mei-yee Shek ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： H01L21/31

CPC分类号： H01L21/76834 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76829 ,  H01L21/76831

摘要： A method of forming a layer on a substrate in a chamber, wherein the substrate has at least one formed feature across its surface, is provided. The method includes exposing the substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer, treating the deposited layer with a plasma, and repeating the exposing and treating until a desired thickness of the layer is obtained. The plasma may be generated from an oxygen-containing gas.

摘要翻译： 提供了一种在室中的衬底上形成层的方法，其中衬底在其表面上具有至少一个形成的特征。 该方法包括在存在等离子体的情况下将衬底暴露于含硅前体以沉积一层，用等离子体处理沉积层，并重复曝光和处理，直到获得所需层厚。 等离子体可以由含氧气体产生。