公开(公告)号：US08729468B2

公开(公告)日：2014-05-20

申请号：US13596644

申请日：2012-08-28

申请人： Min-Kook Kim ,  Woo-Seok Ko ,  Yu-Sin Yang ,  Sang-Kil Lee ,  Chang-Hoon Choi

发明人： Min-Kook Kim ,  Woo-Seok Ko ,  Yu-Sin Yang ,  Sang-Kil Lee ,  Chang-Hoon Choi

IPC分类号： H01J37/26

CPC分类号： H01J37/265 ,  H01J37/08 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/0807

摘要： Microelectronic substrate inspection equipment includes a gas container which contains helium gas, a helium ion generator which is disposed in the gas container and converts the helium gas into helium ions and a wafer stage which is disposed under the gas container and on which a substrate to be inspected is placed. The equipment further includes a secondary electron detector which is disposed above the wafer stage and detects electrons generated from the substrate, a compressor which receives first gaseous nitrogen from a continuous nitrogen supply device and compresses the received first gaseous nitrogen into liquid nitrogen, a liquid nitrogen dewar which is connected to the compressor and stores the liquid nitrogen, and a cooling device that is coupled to the helium ion generator. The cooling device is disposed on the gas container, and cools the helium ion generator by vaporizing the liquid nitrogen. Related methods are also disclosed.

摘要翻译： 微电子基板检查设备包括含有氦气的气体容器，设置在气体容器中并将氦气转换为氦离子的氦离子发生器和设置在气体容器下方的晶片载台， 检查被放置。 该设备还包括二次电子检测器，其设置在晶片台上方并检测从基板产生的电子;压缩机，其接收来自连续氮供应装置的第一气态氮并将接收到的第一气态氮压缩成液态氮;液氮 连接到压缩机并储存液氮的杜瓦瓶，以及耦合到氦离子发生器的冷却装置。 冷却装置设置在气体容器上，并通过蒸发液氮来冷却氦离子发生器。 还公开了相关方法。

公开(公告)号：US20130175445A1

公开(公告)日：2013-07-11

申请号：US13596644

申请日：2012-08-28

申请人： Min-Kook Kim ,  Woo-Seok Ko ,  Yu-Sin Yang ,  Sang-Kil Lee ,  Chang-Hoon Choi

发明人： Min-Kook Kim ,  Woo-Seok Ko ,  Yu-Sin Yang ,  Sang-Kil Lee ,  Chang-Hoon Choi

IPC分类号： H01J37/20

CPC分类号： H01J37/265 ,  H01J37/08 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/0807

摘要： Microelectronic substrate inspection equipment includes a gas container which contains helium gas, a helium ion generator which is disposed in the gas container and converts the helium gas into helium ions and a wafer stage which is disposed under the gas container and on which a substrate to be inspected is placed. The equipment further includes a secondary electron detector which is disposed above the wafer stage and detects electrons generated from the substrate, a compressor which receives first gaseous nitrogen from a continuous nitrogen supply device and compresses the received first gaseous nitrogen into liquid nitrogen, a liquid nitrogen dewar which is connected to the compressor and stores the liquid nitrogen, and a cooling device that is coupled to the helium ion generator. The cooling device is disposed on the gas container, and cools the helium ion generator by vaporizing the liquid nitrogen. Related methods are also disclosed.

摘要翻译： 微电子基板检查设备包括含有氦气的气体容器，设置在气体容器中并将氦气转换为氦离子的氦离子发生器和设置在气体容器下方的晶片载台， 检查被放置。 该设备还包括二次电子检测器，其设置在晶片台上方并检测从基板产生的电子;压缩机，其接收来自连续氮供应装置的第一气态氮并将接收到的第一气态氮压缩成液态氮;液氮 连接到压缩机并储存液氮的杜瓦瓶，以及耦合到氦离子发生器的冷却装置。 冷却装置设置在气体容器上，并通过蒸发液氮来冷却氦离子发生器。 还公开了相关方法。

公开(公告)号：US09455206B2

公开(公告)日：2016-09-27

申请号：US14796478

申请日：2015-07-10

申请人： Seong-Jin Yun ,  Woo-Seok Ko ,  Yu-Sin Yang ,  Sang-Kil Lee ,  Chung-Sam Jun

发明人： Seong-Jin Yun ,  Woo-Seok Ko ,  Yu-Sin Yang ,  Sang-Kil Lee ,  Chung-Sam Jun

IPC分类号： H01L21/66 ,  H01J37/22

CPC分类号： H01L22/20 ,  H01J37/222 ,  H01J2237/221 ,  H01J2237/2617 ,  H01J2237/2817

摘要： An overlay measuring method includes irradiating an electron beam onto a sample, including a multi-layered structure of overlapped upper and lower patterns formed thereon, to obtain an actual image of the upper and lower patterns. A first image representing the upper pattern and a second image representing the lower pattern are obtained from the actual image. A reference position for the upper and lower patterns is determined from a design image of the upper and lower patterns. A position deviation of the upper pattern with respect to the reference position in the first image and a position deviation of the lower pattern with respect to the reference position in the second image are calculated to determine an overlay between the upper pattern and the lower pattern.

摘要翻译： 覆盖测量方法包括将电子束照射到样品上，包括形成在其上的重叠的上下图案的多层结构，以获得上下图案的实际图像。 从实际图像中获得代表上部图案的第一图像和表示较低图案的第二图像。 根据上下图案的设计图像确定上下图案的参考位置。 计算上部图形相对于第一图像中的基准位置的位置偏差和下部图形相对于第二图像中的基准位置的位置偏差，以确定上部图案和下部图案之间的叠加。

公开(公告)号：US20090219520A1

公开(公告)日：2009-09-03

申请号：US12368020

申请日：2009-02-09

申请人： Woo-Seok Ko ,  Yu-Sin Yang ,  Young-Jee Yoon ,  Chung-Sam Jun

发明人： Woo-Seok Ko ,  Yu-Sin Yang ,  Young-Jee Yoon ,  Chung-Sam Jun

IPC分类号： G01N21/88 ,  G06F19/00

CPC分类号： G01N21/9501 ,  G01N2021/8858 ,  G01N2021/8861

摘要： A surface inspection apparatus and method increase wafer productivity, wherein to increase an efficiency of the surface inspection apparatus to detect defects during a scanning of the wafer surface, a scanning speed for a subsequent defect detection is varied according to an increase/decrease of defect density represented on a plurality of images acquired successively. When the density of defects is reduced, the scanning speed increases and a level of a skip rule increases, and when the density of defects increases, the scanning speed decreases and a level of the skip rule decreases to precisely detect defects, thereby increasing reliability, throughput, and productivity.

摘要翻译： 表面检查装置和方法提高晶片生产率，其中为了提高表面检查装置在晶片表面的扫描期间的缺陷的效率，随后的缺陷检测的扫描速度根据缺陷密度的增加/减小而变化 表示在连续获取的多个图像上。 当缺陷密度降低时，扫描速度增加，跳跃规则的水平增加，并且当缺陷密度增加时，扫描速度降低，并且跳过规则的水平降低以精确地检测缺陷，从而提高可靠性， 吞吐量和生产力。

公开(公告)号：US07697130B2

公开(公告)日：2010-04-13

申请号：US12368020

申请日：2009-02-09

申请人： Woo-Seok Ko ,  Yu-Sin Yang ,  Young-Jee Yoon ,  Chung-Sam Jun

发明人： Woo-Seok Ko ,  Yu-Sin Yang ,  Young-Jee Yoon ,  Chung-Sam Jun

IPC分类号： G01N21/88 ,  G06F19/00

CPC分类号： G01N21/9501 ,  G01N2021/8858 ,  G01N2021/8861

摘要： A surface inspection apparatus and method increase wafer productivity, wherein to increase an efficiency of the surface inspection apparatus to detect defects during a scanning of the wafer surface, a scanning speed for a subsequent defect detection is varied according to an increase/decrease of defect density represented on a plurality of images acquired successively. When the density of defects is reduced, the scanning speed increases and a level of a skip rule increases, and when the density of defects increases, the scanning speed decreases and a level of the skip rule decreases to precisely detect defects, thereby increasing reliability, throughput, and productivity.

摘要翻译： 表面检查装置和方法提高晶片生产率，其中为了提高表面检查装置在晶片表面的扫描期间的缺陷的效率，随后的缺陷检测的扫描速度根据缺陷密度的增加/减小而变化 表示在连续获取的多个图像上。 当缺陷密度降低时，扫描速度增加，跳跃规则的水平增加，并且当缺陷密度增加时，扫描速度降低，并且跳过规则的水平降低以精确地检测缺陷，从而提高可靠性， 吞吐量和生产力。