摘要:
A unit pixel for an image sensor includes an accumulation circuit configured to generate an accumulated dark current by accumulating a charge corresponding to a dark current during a time of flight (TOF), the accumulation circuit being optically shaded to generate the dark current, an output voltage generation circuit configured to generate and output an output voltage corresponding to the TOF based on a charge corresponding to the accumulated dark current, a control circuit configured to control an operation of the output voltage generation circuit based on a light signal that is input to the unit pixel after being reflected by an object, the light signal being emitted by a light source, and an initialization circuit configured to initialize the accumulation circuit at a predetermined cycle.
摘要:
An image sensor includes first pixels, second pixels and a deep trench. The first pixels are formed in an active region of a semiconductor substrate, and configured to measure photo-charges corresponding to incident light. The second pixels are formed in an optical-black region of the semiconductor substrate, and are configured to measure black levels. The deep trench is formed vertically in a boundary region of the optical-black region, where the boundary region is adjacent to the active region, and configured to block leakage light and diffusion carriers from the active region.
摘要:
Pixel arrays of an image sensor that include a first pixel and a second pixel adjacent the first pixel are provided. The first pixel may include a first photoelectric conversion device, a first charge storage device, a first floating diffusion node and a first transfer gate. The second pixel may include a second photoelectric conversion device, a second charge storage device, a second floating diffusion node and a second transfer gate. The pixel arrays may also include a storage gate on both the first charge storage device and the second charge storage device. The storage gate may have a unitary structure.
摘要:
An image sensor is provided including a pixel array, a correlated double sampling (CDS) unit, an analog-digital converting (ADC) unit, a control unit, and an overflow power voltage control unit. The pixel array includes at least one unit pixel that generates accumulated charges corresponding to incident light in a photoelectric conversion period and outputs an analog signal based on the accumulated charges in a readout period. The CDS unit generates an image signal by performing a CDS operation on the analog signal. An ADC unit converts the image signal into a digital signal. A control unit controls the pixel array, the CDS unit, and the ADC unit. An overflow power voltage control unit controls an overflow power voltage to have a low voltage level in the photoelectric conversion period and controls the overflow power voltage to have a high voltage level in the readout period.
摘要:
An image sensor includes a pixel array including at least one unit pixel configured to generate accumulated charges, a correlated double sampler configured to perform a correlated double sampling operation to extract an effective signal component based on a signal component and a reset component from the unit pixel for at least first and second read-out periods, the correlated double sampler configured to read out an image signal during the first read-out period and to read out a light noise signal during the second read-out period, an analog-digital converter configured to convert the image signal into a first digital signal and to convert the light noise signal into a second digital signal and an image compensator configured to generate a compensated image signal based on the second digital signal and the first digital signal.
摘要:
Provided are a unit pixel, an image sensor including the same, a portable electronic device including the same, and a method of manufacturing the same. The method of manufacturing includes: forming a photoelectric conversion region in a substrate; forming, in the substrate, a first floating diffusion region spaced apart from the photoelectric conversion region of the substrate, and a second floating diffusion region spaced apart from the first floating diffusion region; forming a first recess spaced apart from the first floating diffusion region and the second floating diffusion region by removing a portion of the substrate from a first surface of the substrate; filling the first recess to form a dual conversion gain (DCG) gate that extends perpendicularly or substantially perpendicularly from the first surface of the substrate; and forming a conductive layer to fill an inside of the first recess.
摘要:
Provided are a unit pixel, an image sensor including the same, a portable electronic device including the same, and a method of manufacturing the same. The method of manufacturing includes: forming a photoelectric conversion region in a substrate; forming, in the substrate, a first floating diffusion region spaced apart from the photoelectric conversion region of the substrate, and a second floating diffusion region spaced apart from the first floating diffusion region; forming a first recess spaced apart from the first floating diffusion region and the second floating diffusion region by removing a portion of the substrate from a first surface of the substrate; filling the first recess to form a dual conversion gain (DCG) gate that extends perpendicularly or substantially perpendicularly from the first surface of the substrate; and forming a conductive layer to fill an inside of the first recess.