摘要:
A method for fabricating an integrated device is disclosed. The disclosed method provides improved formation selectivity of epitaxial films over a pre-determined region designed for forming an epi film and a protective layer preferred not to form an epi, polycrystalline, or amorphous film thereon during an epi film formation process. In an embodiment, the improved formation selectivity is achieved by providing a nitrogen-rich protective layer to decrease the amount of growth epi, polycrystalline, or amorphous film thereon.
摘要:
A method for fabricating an integrated device is disclosed. A polysilicon gate electrode layer is provided on a substrate. In an embodiment, a treatment is provided on the polysilicon gate electrode layer to introduce species in the gate electrode layer and form an electrically neutralized portion therein. Then, a hard mask layer with limited thickness is applied on the treated polysilicon gate electrode layer. A tilt angle ion implantation is thus performing on the substrate after patterning the hard mask layer and the treated polysilicon gate electrode to from a gate structure.
摘要:
A flexible and extensible architecture allows for secure searching across an enterprise. Such an architecture can provide a simple Internet-like search experience to users searching secure content inside (and outside) the enterprise. The architecture allows for the crawling and searching of a variety of sources across an enterprise, regardless of whether any of these sources conform to a conventional user role model. The architecture further allows for security attributes to be submitted at query time, for example, in order to provide real-time secure access to enterprise resources. The user query also can be transformed to provide for dynamic querying that provides for a more current result list than can be obtained for static queries.
摘要:
A flexible and extensible architecture allows for secure searching across an enterprise. Such an architecture can provide a simple Internet-like search experience to users searching secure content inside (and outside) the enterprise. The architecture allows for the crawling and searching of a variety or sources across an enterprise, regardless of whether any of these sources conform to a conventional user role model. The architecture further allows for security attributes to be submitted at query time, for example, in order to provide real-time secure access to enterprise resources. The user query also can be transformed to provide for dynamic querying that provides for a more current result list than can be obtained for static queries.
摘要:
A flexible and extensible architecture allows for secure searching across an enterprise. Such an architecture can provide a simple Internet-like search experience to users searching secure content inside (and outside) the enterprise. The architecture allows for the crawling and searching of a variety or sources across an enterprise, regardless of whether any of these sources conform to a conventional user role model. The architecture further allows for security attributes to be submitted at query time, for example, in order to provide real-time secure access to enterprise resources. The user query also can be transformed to provide for dynamic querying that provides for a more current result list than can be obtained for static queries.
摘要:
A flexible and extensible architecture allows for secure searching across an enterprise. Such an architecture can provide a simple Internet-like search experience to users searching secure content inside (and outside) the enterprise. The architecture allows for the crawling and searching of a variety of sources across an enterprise, regardless of whether any of these sources conform to a conventional user role model. The architecture further allows for security attributes to be submitted at query time, for example, in order to provide real-time secure access to enterprise resources. The user query also can be transformed to provide for dynamic querying that provides for a more current result list than can be obtained for static queries.
摘要:
A flexible and extensible architecture allows for secure searching across an enterprise. Such an architecture can provide a simple Internet-like search experience to users searching secure content inside (and outside) the enterprise. The architecture allows for the crawling and searching of a variety or sources across an enterprise, regardless of whether any of these sources conform to a conventional user role model. The architecture further allows for security attributes to be submitted at query time, for example, in order to provide real-time secure access to enterprise resources. The user query also can be transformed to provide for dynamic querying that provides for a more current result list than can be obtained for static queries.
摘要:
A method for fabricating an integrated device is disclosed. In an embodiment, a hard mask layer with a limited thickness is formed over a gate electrode layer. A treatment is provided to the hard mask layer to make the hard mask layer more resistant to a wet etch solution. Then, a patterning is provided on the treated hard mask layer and the gate electrode to from a gate structure.
摘要:
A method for fabricating a semiconductor device is disclosed. The method includes forming at least one material layer over a substrate; performing an end-cut patterning process to form an end-cut pattern overlying the at least one material layer; transferring the end-cut pattern to the at least one material layer; performing a line-cut patterning process after the end-cut patterning process to form a line-cut pattern overlying the at least one material layer; and transferring the line-cut pattern to the at least one material layer.
摘要:
An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source and drain (LDD) region in a source and drain region of the device. The doped region is implanted with a dopant type opposite the LDD region.