公开(公告)号：US07001840B1

公开(公告)日：2006-02-21

申请号：US10361332

申请日：2003-02-10

申请人： Minh Quoc Tran ,  Lu You ,  Fei Wang ,  Lynne Okada

发明人： Minh Quoc Tran ,  Lu You ,  Fei Wang ,  Lynne Okada

IPC分类号： H01L21/44

CPC分类号： H01L21/76879 ,  H01L21/2885

摘要： An interconnect structure is formed with a plurality of layers of a conductive material with a grain boundary between any two adjacent layers of the conductive material. Such grain boundaries between layers of conductive material act as shunt by-pass paths for migration of atoms of the conductive material to minimize migration of atoms of the conductive material along the interface between a dielectric passivation or capping layer and the interconnect structure. When the interconnect structure is a via structure, each of the layers of the conductive material and each of the grain boundary are formed to be perpendicular to a direction of current flow through the via structure. Such grain boundaries formed between the plurality of layers of conductive material in the via structure minimize charge carrier wind-force along the direction of current flow through the via structure to further minimize electromigration failure of the via structure.

摘要翻译： 互连结构形成有导电材料的多层，在导电材料的任何两个相邻层之间具有晶界。 导电材料层之间的这种晶界作为用于迁移导电材料的原子的分流旁通路径，以最小化导电材料原子沿着介电钝化层或覆盖层与互连结构之间的界面的迁移。 当互连结构是通孔结构时，导电材料的每个层和每个晶界形成为垂直于通过过孔结构的电流的方向。 在通孔结构中的多个导电材料层之间形成的这种晶界沿着通过通孔结构的电流流动的方向最小化载流子的风力，以进一步最小化通孔结构的电迁移故障。

公开(公告)号：US06699792B1

公开(公告)日：2004-03-02

申请号：US09907398

申请日：2001-07-17

申请人： Fei Wang ,  Lu You ,  Lynne Okada

发明人： Fei Wang ,  Lu You ,  Lynne Okada

IPC分类号： H01L21311

CPC分类号： H01L21/32139 ,  H01L21/0271 ,  H01L21/0338 ,  H01L21/31144

摘要： In forming an opening or space in a substrate, a layer of photoresist is provided on the substrate, and the photoresist is patterned to provide photoresist bodies having respective adjacent sidewalls. A polymer layer is provided on the resulting structure through a low temperature conformal CVD process. The polymer layer is anisotropically etched to form spacers on the respective adjacent sidewalls of the photoresist bodies. The substrate is then etched using the spacers as a mask.

摘要翻译： 在形成衬底中的开口或空间时，在衬底上提供光致抗蚀剂层，并且对光致抗蚀剂进行图案化以提供具有相应相邻侧壁的光致抗蚀剂体。 通过低温保形CVD工艺在所得结构上提供聚合物层。 聚合物层被各向异性蚀刻以在光致抗蚀剂体的各个相邻侧壁上形成间隔物。 然后使用间隔物作为掩模蚀刻衬底。