公开(公告)号：US20050151132A1

公开(公告)日：2005-07-14

申请号：US11048893

申请日：2005-02-03

申请人： Misako Nakazawa ,  Mitsuhiro Ichijo ,  Toshiji Hamatani ,  Hideto Ohnuma ,  Naoki Makita

发明人： Misako Nakazawa ,  Mitsuhiro Ichijo ,  Toshiji Hamatani ,  Hideto Ohnuma ,  Naoki Makita

IPC分类号： H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L29/04 ,  C30B1/00 ,  H01L21/00 ,  H01L21/36 ,  H01L29/10 ,  H01L29/12 ,  H01L31/036

CPC分类号： H01L29/4908 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621

摘要： A barrier layer that meets three requirements, “withstand well against etching and protect a semiconductor film from an etchant as an etching stopper”, “allow impurities to move in itself during heat treatment for gettering”, and “have excellent reproducibility”, is formed and used to getter impurities contained in a semiconductor film. The barrier layer is a silicon oxide film and the ratio of a sub-oxide contained in the barrier layer is 18% or higher.

公开(公告)号：US06734050B2

公开(公告)日：2004-05-11

申请号：US10229385

申请日：2002-08-28

申请人： Misako Nakazawa ,  Toshiji Hamatani ,  Naoki Makita

发明人： Misako Nakazawa ,  Toshiji Hamatani ,  Naoki Makita

IPC分类号： H01L2184

CPC分类号： H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.

摘要翻译： 催化剂元素的自旋加成方法是简单且非常重要的技术，因为通过控制催化剂元素溶液中的催化剂元素浓度可以容易地添加结晶所需的催化剂元素的最小量，但是存在以下问题： 底物内添加的催化剂元素的量差。 认为衬底内添加的催化剂元素的量的不均匀性会影响已经经过热结晶的结晶半导体膜的结晶度的波动，并且对最终由结晶半导体膜构成的TFT的电特性产生不良影响 。 本发明通过上述传统技术解决了这个问题。 如果在催化剂元素自由添加步骤中从催化剂元素溶液处理的滴落到高速纺丝干燥过程的时间段内将旋转旋转加速度设定为低，则显而易见的是， 衬底内添加的催化剂元素得到改善。 因此，通过对制造结晶半导体膜的方法应用具有低自旋旋转加速度的自旋加成工艺来解决上述问题。

公开(公告)号：US06998641B2

公开(公告)日：2006-02-14

申请号：US10183056

申请日：2002-06-27

申请人： Naoki Makita ,  Misako Nakazawa ,  Hideto Ohnuma ,  Takuya Matsuo

发明人： Naoki Makita ,  Misako Nakazawa ,  Hideto Ohnuma ,  Takuya Matsuo

IPC分类号： H01L31/112

CPC分类号： H01L29/66757 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/78612 ,  H01L29/78621

摘要： In order to solve the problem of inferior gettering efficiency in the n-channel TFT, the present invention provides at an end of the source/drain regions of the n-channel TFT a highly efficient gettering region that contains both of an n-type impurity and a p-type impurity with the concentration of the p-type impurity set higher than the concentration of the n-type impurity.

摘要翻译： 为了解决在n沟道TFT中吸杂效率差的问题，本发明在n沟道TFT的源极/漏极区域的末端提供了一种高效率的吸杂区域，其包含n型杂质 以及p型杂质浓度高于n型杂质浓度的p型杂质。

公开(公告)号：US20050170573A1

公开(公告)日：2005-08-04

申请号：US11088888

申请日：2005-03-25

申请人： Naoki Makita ,  Misako Nakazawa ,  Hideto Ohnuma ,  Takuya Matsuo

发明人： Naoki Makita ,  Misako Nakazawa ,  Hideto Ohnuma ,  Takuya Matsuo

IPC分类号： G02F1/1368 ,  H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L27/08 ,  H01L29/786 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/66757 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/78612 ,  H01L29/78621

摘要： Problems in prior art regarding an n-channel TFT in the source/drain gettering method are solved. In the n-channel TFT, its source/drain regions contain only an n-type impurity. Therefore, compared to a p-channel TFT whose source/drain regions contain an n-type impurity and a higher concentration of p-type impurity, the gettering efficiency is inferior in a channel region of the n-channel transistor. Accordingly, the problem of inferior gettering efficiency in the n-channel TFT can be solved by providing at an end of its source/drain regions a highly efficient gettering region that contains an n-type impurity and a p-type impurity both with the concentration of the p-type impurity set higher than the concentration of the n-type impurity.

摘要翻译： 解决了在源极/漏极吸杂方法中关于n沟道TFT的现有技术中的问题。 在n沟道TFT中，其源极/漏极区仅包含n型杂质。 因此，与源极/漏极区域包含n型杂质和较高浓度的p型杂质的p沟道TFT相比，n沟道晶体管的沟道区域的吸杂效率较差。 因此，可以通过在其源极/漏极区域的末端设置包含n型杂质的高效吸气区域和浓度为p型的p型杂质来解决n沟道TFT的吸杂效率差的问题 的p型杂质的浓度高于n型杂质浓度。

公开(公告)号：US07625786B2

公开(公告)日：2009-12-01

申请号：US11088888

申请日：2005-03-25

申请人： Naoki Makita ,  Misako Nakazawa ,  Hideto Ohnuma ,  Takuya Matsuo

发明人： Naoki Makita ,  Misako Nakazawa ,  Hideto Ohnuma ,  Takuya Matsuo

IPC分类号： H01L21/84

CPC分类号： H01L29/66757 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/78612 ,  H01L29/78621

摘要： Problems in prior art regarding an n-channel TFT in the source/drain gettering method are solved. In the n-channel TFT, its source/drain regions contain only an n-type impurity. Therefore, compared to a p-channel TFT whose source/drain regions contain an n-type impurity and a higher concentration of p-type impurity, the gettering efficiency is inferior in a channel region of the n-channel transistor. Accordingly, the problem of inferior gettering efficiency in the n-channel TFT can be solved by providing at an end of its source/drain regions a highly efficient gettering region that contains an n-type impurity and a p-type impurity both with the concentration of the p-type impurity set higher than the concentration of the n-type impurity.

摘要翻译： 解决了在源极/漏极吸杂方法中关于n沟道TFT的现有技术中的问题。 在n沟道TFT中，其源极/漏极区仅包含n型杂质。 因此，与源极/漏极区域包含n型杂质和较高浓度的p型杂质的p沟道TFT相比，n沟道晶体管的沟道区域的吸杂效率较差。 因此，可以通过在其源极/漏极区域的末端设置包含n型杂质的高效吸气区域和浓度为p型的p型杂质来解决n沟道TFT的吸杂效率差的问题 的p型杂质的浓度高于n型杂质浓度。

公开(公告)号：US07332385B2

公开(公告)日：2008-02-19

申请号：US10365911

申请日：2003-02-13

申请人： Misako Nakazawa ,  Naoki Makita

发明人： Misako Nakazawa ,  Naoki Makita

IPC分类号： H01L21/00

CPC分类号： H01L27/12 ,  H01L27/1277 ,  H01L29/42384 ,  H01L29/4908

摘要： A catalytic element is added to an amorphous semiconductor film and heat treatment is conducted therefor to produce a crystalline semiconductor film with good quality, a TFT (semiconductor device) with a satisfactory characteristic is realized using the crystalline semiconductor film. A semiconductor layer includes a region containing an impurity element which has a concentration of 1×1019/cm3 to 1×1021/cm3 and belongs to group 15 of the periodic table and an impurity element which has a concentration of 1.5×1019/cm3 to 3×1021/cm3 and belongs to group 13 of the periodic table, and the region is a region to which a catalytic element left in the semiconductor film (particularly, the channel forming region) moves.

摘要翻译： 将催化元素添加到非晶半导体膜中，并进行热处理以产生质量好的结晶半导体膜，使用晶体半导体膜实现具有令人满意的特性的TFT（半导体器件）。 半导体层包括含有浓度为1×10 19 / cm 3至1×10 12 / cm 3的杂质元素的区域 属于周期表第15组，杂质元素浓度为1.5×10 9 / cm 3至3×10 21 / SUP> / cm 3，属于周期表第13族，区域是留在半导体膜（特别是沟道形成区）中的催化元素移动的区域。

公开(公告)号：US20060024925A1

公开(公告)日：2006-02-02

申请号：US11240467

申请日：2005-10-03

申请人： Misako Nakazawa ,  Toshiji Hamatani ,  Naoki Makita

发明人： Misako Nakazawa ,  Toshiji Hamatani ,  Naoki Makita

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.

公开(公告)号：US07960296B2

公开(公告)日：2011-06-14

申请号：US12269274

申请日：2008-11-12

申请人： Misako Nakazawa ,  Toshiji Hamatani ,  Naoki Makita

发明人： Misako Nakazawa ,  Toshiji Hamatani ,  Naoki Makita

IPC分类号： H01L21/00

CPC分类号： H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.

摘要翻译： 催化剂元素的自旋加成方法是简单且非常重要的技术，因为通过控制催化剂元素溶液中的催化剂元素浓度可以容易地添加结晶所需的催化剂元素的最小量，但是存在以下问题： 底物内添加的催化剂元素的量差。 认为衬底内添加的催化剂元素的量的不均匀性会影响已经经过热结晶的结晶半导体膜的结晶度的波动，并且对最终由结晶半导体膜构成的TFT的电特性产生不良影响 。 本发明通过上述传统技术解决了这个问题。 如果在催化剂元素自由添加步骤中从催化剂元素溶液处理的滴落到高速纺丝干燥过程的时间段内将旋转旋转加速度设定为低，则显而易见的是， 衬底内添加的催化剂元素得到改善。 因此，通过对制造结晶半导体膜的方法应用具有低自旋旋转加速度的自旋加成工艺来解决上述问题。

公开(公告)号：US07821008B2

公开(公告)日：2010-10-26

申请号：US11784965

申请日：2007-04-10

申请人： Misako Nakazawa ,  Naoki Makita

发明人： Misako Nakazawa ,  Naoki Makita

IPC分类号： H01L29/00 ,  H01L21/322

CPC分类号： H01L27/12 ,  H01L27/1277 ,  H01L29/42384 ,  H01L29/4908

摘要： A catalytic element is added to an amorphous semiconductor film and heat treatment is conducted therefor to produce a crystalline semiconductor film with good quality, a TFT (semiconductor device) with a satisfactory characteristic is realized using the crystalline semiconductor film. A semiconductor layer includes a region containing an impurity element which has a concentration of 1×1019/cm3 to 1×1021/cm3 and belongs to group 15 of the periodic table and an impurity element which has a concentration of 1.5×1019/cm3 to 3×1021/cm3 and belongs to group 13 of the periodic table, and the region is a region to which a catalytic element left in the semiconductor film (particularly, the channel forming region) moves.

摘要翻译： 将催化元素添加到非晶半导体膜中，并进行热处理以产生质量好的结晶半导体膜，使用晶体半导体膜实现具有令人满意的特性的TFT（半导体器件）。 半导体层包括含有浓度为1×1019 / cm3至1×1021 / cm3并属于周期表第15族的杂质元素的区域和浓度为1.5×1019 / cm3至 3×1021 / cm3，属于周期表的第13族，该区域是留在半导体膜（特别是沟道形成区域）中的催化元素移动的区域。

公开(公告)号：US07452791B2

公开(公告)日：2008-11-18

申请号：US11240467

申请日：2005-10-03

申请人： Misako Nakazawa ,  Toshiji Hamatani ,  Naoki Makita

发明人： Misako Nakazawa ,  Toshiji Hamatani ,  Naoki Makita

IPC分类号： H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.

摘要翻译： 催化剂元素的自旋加成方法是简单且非常重要的技术，因为通过控制催化剂元素溶液中的催化剂元素浓度可以容易地添加结晶所需的催化剂元素的最小量，但是存在以下问题： 底物内添加的催化剂元素的量差。 认为衬底内添加的催化剂元素的量的不均匀性会影响已经经过热结晶的结晶半导体膜的结晶度的波动，并且对最终由结晶半导体膜构成的TFT的电特性产生不良影响 。 本发明通过上述传统技术解决了这个问题。 如果在催化剂元素自由添加步骤中从催化剂元素溶液处理的滴落到高速纺丝干燥过程的时间段内将旋转旋转加速度设定为低，则显而易见的是， 衬底内添加的催化剂元素得到改善。 因此，通过对制造结晶半导体膜的方法应用具有低自旋旋转加速度的自旋加成工艺来解决上述问题。