公开(公告)号：US07061090B2

公开(公告)日：2006-06-13

申请号：US10382926

申请日：2003-03-07

申请人： Misuk Yamazaki ,  Tatsuo Yamazaki

发明人： Misuk Yamazaki ,  Tatsuo Yamazaki

IPC分类号： H01L23/48 ,  H01L23/34

CPC分类号： H01L23/051 ,  H01L24/01 ,  H01L24/33 ,  H01L2924/181 ,  H01L2924/00012

摘要： A semiconductor device comprises a semi-conductor chip bonded on a top surface inside a case electrode by a bonding material and a lead electrode bonded on a top surface of the semiconductor chip by a bonding material with a space of the case electrode filled with an insulating material for sealing the bonded sections, wherein a groove is provided on a top surface of the case electrode from an edge of the semiconductor chip, to thereby reduce heat distortion which is generated on a large scale at an end of the bonding material on account of a difference in coefficients of linear thermal expansion between the semiconductor chip and the case electrode and improve the thermal fatigue life.

摘要翻译： 半导体器件包括通过接合材料在壳体电极内的顶表面上接合的半导体芯片和通过接合材料接合在半导体芯片的顶表面上的引线电极，所述接合材料具有填充有绝缘体的壳体电极的空间 用于密封接合部分的材料，其中在半导体芯片的边缘处在壳体电极的顶表面上设置凹槽，从而减少由于接合材料的端部而大规模地产生的热变形 半导体芯片和壳体电极之间的线性热膨胀系数的差异，并且提高热疲劳寿命。

公开(公告)号：US08426754B2

公开(公告)日：2013-04-23

申请号：US12354252

申请日：2009-01-15

申请人： Shigeru Kikuchi ,  Satoru Kajiwara ,  Masato Kobayashi ,  Misuk Yamazaki

发明人： Shigeru Kikuchi ,  Satoru Kajiwara ,  Masato Kobayashi ,  Misuk Yamazaki

IPC分类号： H01H1/02

CPC分类号： H01H1/0206 ,  H01H11/045 ,  H01H33/6643

摘要： An electrical contact comprising a contact layer for making a contact with an opposite electrical contact and a high conductive layer in an opposite side of the contact layer, the layers being integrally connected to each other, wherein the contact layer contains Cr, Cu and Te, and the high conductive layer contains copper as a main component, and wherein the high conductive layer is provided with a means for suppressing warp of the contact layer at the time of turning on of the contacts.

摘要翻译： 一种电触头，其包括用于与相对电接触件接触的接触层和在接触层的相对侧中的高导电层，所述层彼此一体地连接，其中所述接触层包含Cr，Cu和Te， 并且所述高导电层含有铜作为主要成分，并且其中所述高导电层设置有用于抑制所述触点接通时所述接触层的翘曲的装置。

公开(公告)号：US20090184274A1

公开(公告)日：2009-07-23

申请号：US12354252

申请日：2009-01-15

申请人： Shigeru Kikuchi ,  Satoru Kajiwara ,  Masato Kobayashi ,  Misuk Yamazaki

发明人： Shigeru Kikuchi ,  Satoru Kajiwara ,  Masato Kobayashi ,  Misuk Yamazaki

IPC分类号： F16K31/02 ,  H01R13/03

CPC分类号： H01H1/0206 ,  H01H11/045 ,  H01H33/6643

摘要： An electrical contact comprising a contact layer for making a contact with an opposite electrical contact and a high conductive layer in an opposite side of the contact layer, the layers being integrally connected to each other, wherein the contact layer contains Cr, Cu and Te, and the high conductive layer contains copper as a main component, and wherein the high conductive layer is provided with a means for suppressing warp of the contact layer at the time of turning on of the contacts.

摘要翻译： 一种电触头，其包括用于与相对电接触件接触的接触层和在接触层的相对侧中的高导电层，所述层彼此一体地连接，其中所述接触层包含Cr，Cu和Te， 并且所述高导电层含有铜作为主要成分，并且其中所述高导电层设置有用于抑制所述触点接通时所述接触层的翘曲的装置。

公开(公告)号：US07002244B2

公开(公告)日：2006-02-21

申请号：US10750857

申请日：2004-01-05

申请人： Misuk Yamazaki ,  Satoshi Matsuyoshi ,  Chikara Makajima

发明人： Misuk Yamazaki ,  Satoshi Matsuyoshi ,  Chikara Makajima

IPC分类号： H01L23/48

CPC分类号： H01L24/01 ,  H01L23/24 ,  H01L23/492 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01082

摘要： There is a need to provide a semiconductor device in which strain in a bonding member resulting from the difference in thermal deformation between a lead electrode and a semiconductor chip, which are electrically bonded to each other by the bonding member, is reduced for an improved thermal fatigue lifetime and the semiconductor chip has an improved current carrying capacity and enhanced heat dissipation. In the semiconductor device having the semiconductor chip mounted on the upper surface of the case electrode by using the bonding member and a lead electrode mounted on the upper surface of the semiconductor chip by using a bonding member, while an insulating member is filled in the space of the case electrode to seal a bonded portion, a trench is provided in the upper surface of the lead electrode to reduce large thermal strain occurring at the end portion of the bonding member due to the difference in linear expansion coefficients between the lead electrode and the semiconductor chip and improve the thermal fatigue lifetime. Consideration is also given to a reduction in variations in the thickness of a connecting member.

摘要翻译： 需要提供一种半导体器件，其中通过由接合部件彼此电接合的引线电极和半导体芯片之间的热变形差引起的接合部件中的应变减小，以改善热 疲劳寿命和半导体芯片具有改善的载流能力和增强的散热。 在通过使用接合部件将半导体芯片安装在壳体电极的上表面上的半导体器件中，并且通过使用接合部件安装在半导体芯片的上表面上的引线电极，同时绝缘部件被填充在空间 的壳体电极以密封接合部分，在引线电极的上表面中设置沟槽，以减少由于引线电极和引线电极之间的线膨胀系数的差异而在接合部件的端部处产生的大的热应变 半导体芯片，提高热疲劳寿命。 还考虑到连接构件的厚度变化的减小。