公开(公告)号：US10027218B2

公开(公告)日：2018-07-17

申请号：US15322763

申请日：2015-01-21

申请人： Mitsubishi Electric Corporation

发明人： Yoshitaka Naka ,  Yasushi Nakayama ,  Yoshiko Tamada ,  Shoichi Orita

IPC分类号： H03B1/00 ,  H03K3/00 ,  H02M1/08 ,  H02M1/00

摘要： A power semiconductor device driving circuit has a capacitor whose one end is connected with a first or a second main electrode of a power semiconductor device, a first switch for charging the capacitor and a control electrode of the power semiconductor device with electric charges, and a second switch for discharging electric charges; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through different resistors, electric charges are discharged from the control electrode and the capacitor through one and the same resistor when the second switch turns on; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through one and the same resistor, electric charges are discharged from the control electrode and the capacitor through different resistors when the second switch turns on.

公开(公告)号：US20190109220A1

公开(公告)日：2019-04-11

申请号：US16212051

申请日：2018-12-06

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Akihiko FURUKAWA ,  Shoichi Orita ,  Hiroki Muraoka ,  Atsushi Narazaki ,  Tsuyoshi Kawakami ,  Yuji Murakami

IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/40 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66

摘要： In the present application, a power semiconductor device includes a first-conductive-type first base region having a first principal surface and a second principal surface opposite to the first principal surface, a second-conductive-type second base region disposed on the first principal surface and at least three groove parts parallel to each other disposed from a surface of the second base region. The device further includes insulating films covering inner walls of the respective groove parts, conductive trench gates filled on the insulating films, a first-conductive-type emitter region disposed in the second base region, and a second-conductive-type collector region disposed on the second principal surface of the first base region. The trench gates embedded in the first groove part and the third groove part are electrically connected to the gate electrode, and the trench gate embedded in the second groove part is electrically connected to the emitter electrode.

公开(公告)号：US10199340B2

公开(公告)日：2019-02-05

申请号：US15509126

申请日：2015-08-19

申请人： Mitsubishi Electric Corporation

发明人： Kenichi Suga ,  Takao Tsurimoto ,  Hiroki Shiota ,  Kenichi Morokuma ,  Shoichi Orita ,  Fumitaka Tametani ,  Takahiro Inoue ,  Shiori Uota

IPC分类号： H01L23/64 ,  H01F27/32 ,  H01L23/00 ,  G11C11/34 ,  H01L23/373 ,  H01L25/16 ,  H04L1/00 ,  H05K7/14 ,  H01F27/28 ,  H01L23/62 ,  H01L25/18

摘要： A signal transmission insulating device includes: a first coil; a second coil opposing the first coil to form a transformer together with the first coil; a first insulating film provided between the opposing first coil and second coil and made of a first dielectric material; a second insulating film surrounding the first coil and made of a second dielectric material having a lower resistivity or a higher permittivity than the first dielectric material; and a third insulating film surrounding the second coil and made of a third dielectric material having a lower resistivity or a higher permittivity than the first dielectric material.

公开(公告)号：US10892352B2

公开(公告)日：2021-01-12

申请号：US16212051

申请日：2018-12-06

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Akihiko Furukawa ,  Shoichi Orita ,  Hiroki Muraoka ,  Atsushi Narazaki ,  Tsuyoshi Kawakami ,  Yuji Murakami

IPC分类号： H01L29/739 ,  H01L29/40 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66

摘要： In the present application, a power semiconductor device includes a first-conductive-type first base region having a first principal surface and a second principal surface opposite to the first principal surface, a second-conductive-type second base region disposed on the first principal surface and at least three groove parts parallel to each other disposed from a surface of the second base region. The device further includes insulating films covering inner walls of the respective groove parts, conductive trench gates filled on the insulating films, a first-conductive-type emitter region disposed in the second base region, and a second-conductive-type collector region disposed on the second principal surface of the first base region. The trench gates embedded in the first groove part and the third groove part are electrically connected to the gate electrode, and the trench gate embedded in the second groove part is electrically connected to the emitter electrode.

公开(公告)号：US10192977B2

公开(公告)日：2019-01-29

申请号：US15122261

申请日：2014-10-29

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Akihiko Furukawa ,  Shoichi Orita ,  Hiroki Muraoka ,  Atsushi Narazaki ,  Tsuyoshi Kawakami ,  Yuji Murakami

IPC分类号： H01L29/739 ,  H01L29/10 ,  H01L29/66 ,  H01L29/08 ,  H01L29/40 ,  H01L29/06

摘要： In the present application, a power semiconductor device includes a first-conductive-type first base region having a first principal surface and a second principal surface opposite to the first principal surface, a second-conductive-type second base region disposed on the first principal surface and at least three groove parts parallel to each other disposed from a surface of the second base region. The device further includes insulating films covering inner walls of the respective groove parts, conductive trench gates filled on the insulating films, a first-conductive-type emitter region disposed in the second base region, and a second-conductive-type collector region disposed on the second principal surface of the first base region. The trench gates embedded in the first groove part and the third groove part are electrically connected to the gate electrode, and the trench gate embedded in the second groove part is electrically connected to the emitter electrode.

公开(公告)号：US10171070B2

公开(公告)日：2019-01-01

申请号：US15579790

申请日：2016-05-12

申请人： Mitsubishi Electric Corporation

发明人： Kenichi Morokuma ,  Jun Tomisawa ,  Tetsuya Uchida ,  Shoichi Orita

IPC分类号： H03K17/081 ,  H02M1/08 ,  H03K17/691 ,  H03K17/0812

摘要： A first circuit outputs transmission signals that change between “H” and “L” in a period of an oscillation signal in addition to a transition time of an input signal when it changes to “H” or “L”. Control protection elements invalidate induced voltage signals obtained from transformers for first and second mask periods in response to transmission signals. Buffer circuits and Schmitt circuits generate a first signal and a second signal, each indicating “H” for a relatively long period, on the basis of “H” of the induced voltage signals. A control circuit invalidates the first signal and the second signal when both the first signal and the second signal indicate “H”.