-
公开(公告)号：US11063025B2
公开(公告)日：2021-07-13
申请号：US16632029
申请日：2018-08-27
发明人： Junichi Nakashima , Shota Morisaki , Yoshiko Tamada , Yasushi Nakayama , Tetsu Negishi , Ryo Tsuda , Yukimasa Hayashida , Ryutaro Date
摘要： Gates of a plurality of semiconductor switching elements are electrically connected to a common gate control pattern by gate wires. Sources of the plurality of semiconductor switching elements are electrically connected to a common source control pattern by source wires. The gate control pattern is disposed to interpose the source control pattern between the gate control pattern and each of the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel. Hence, each of the gate wires becomes longer than each of the source wires, and has an inductance larger than the source wire. Accordingly, gate oscillation is reduced or suppressed in the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel.
-
公开(公告)号：US10134718B2
公开(公告)日：2018-11-20
申请号：US15738167
申请日：2016-06-28
发明人： Yasushige Mukunoki , Yoshiko Tamada
IPC分类号： H01L25/18 , H01L25/07 , H02M7/48 , H01L23/498 , H02M7/00 , H02M7/5387 , H01L23/538 , H01L23/367 , H01L23/00
摘要： A power semiconductor module including a positive-side switching device and a positive-side diode device which are mounted on a positive-side conductive pattern, and a negative-side switching device and a negative-side diode device which are mounted on an output-side conductive pattern. When an insulating substrate is viewed in plan view, the positive-side diode device and the negative-side diode device are disposed between the positive-side switching device and the negative-side switching device, and the negative-side diode device is disposed closer to the positive-side switching device than the positive-side diode device is.
-
公开(公告)号：US11955959B2
公开(公告)日：2024-04-09
申请号：US17613697
申请日：2019-05-29
发明人： Yasushi Nakayama , Yoshiko Tamada , Takayoshi Miki , Shota Morisaki , Yukio Nakashima , Kenta Uchida , Keisuke Kimura , Tomonobu Mihara
IPC分类号： H03K17/14 , H03K17/04 , H03K17/0412 , H03K17/28 , H02M1/088
CPC分类号： H03K17/14 , H03K17/04 , H03K17/0412 , H03K17/28 , H02M1/088
摘要： A parallel driving device that drives parallel-connected semiconductor elements includes a control unit and a gate driving circuit. The control unit detects a temperature difference between the semiconductor elements on the basis of detected values by temperature sensors that detect temperatures of the individual semiconductor elements. The control unit generates a control signal for changing the timing at which to turn on a first semiconductor element specified from the semiconductor elements on the basis of the temperature difference. The gate driving circuit generates a first driving signal for driving the semiconductor elements, and generates a second driving signal that is the first driving signal delayed on the basis of the control signal, and applies the second driving signal to the first semiconductor element.
-
公开(公告)号：US11271043B2
公开(公告)日：2022-03-08
申请号：US16488752
申请日：2018-04-11
发明人： Shota Morisaki , Yoshiko Tamada , Junichi Nakashima , Daisuke Oya
IPC分类号： H01L27/30 , H01L27/108 , H02M7/48 , H01L29/739
摘要： An emitter interconnection connecting the emitter of a semiconductor switching element to a negative electrode is different in one or both of length and width from an emitter interconnection connecting the emitter of a semiconductor switching element to the negative electrode. At the time of switching, an induced electromotive force is generated at a gate control wire, or at a gate pattern, or at an emitter wire, by at least one of a current flowing through a positive electrode and a current flowing through the negative electrode, so as to reduce the difference between the emitter potential of the semiconductor switching element and the emitter potential of the semiconductor switching element caused by the difference.
-
公开(公告)号：US12132472B2
公开(公告)日：2024-10-29
申请号：US17921367
申请日：2020-06-01
IPC分类号： H03K17/082 , H03K3/012 , H03K17/08
CPC分类号： H03K17/0822 , H03K3/012 , H03K2017/0806
摘要： A classification circuit generates first information for classifying an operating state of a power semiconductor element into one of a plurality of predetermined operating regions. A selector circuit generates second information for selecting a plurality of modes with different switching speeds, based on a user input. A characteristic control circuit stores a drive adjustment signal in advance for each of combinations of the operating regions and the modes and outputs the drive adjustment signal in a combination of one operating region and one mode that is selected in accordance with the first information and the second information. A gate drive circuit charges/discharges a gate at a charge rate and a discharge rate variably set in accordance with the drive adjustment signal from the characteristic control circuit, at the time of on/off of the power semiconductor element.
-
公开(公告)号：US10651839B2
公开(公告)日：2020-05-12
申请号：US15747542
申请日：2016-08-04
IPC分类号： H02H3/00 , H03K17/16 , H03K17/12 , H03K17/082
摘要： A power switching apparatus includes a plurality of semiconductor switching devices connected in parallel with each other and a plurality of balance resistor units. The plurality of balance resistor units each have one end connected to a control electrode of an associated semiconductor switching device and the other end to which a common control signal is input. Each balance resistor unit is configured to have a resistance value switched between different values depending on whether the plurality of semiconductor switching devices are turned on or turned off in accordance with the control signal.
-
公开(公告)号：US10727213B2
公开(公告)日：2020-07-28
申请号：US16320500
申请日：2017-09-15
IPC分类号： H01L25/16 , H02M7/48 , H03H7/01 , H03H7/06 , H03H11/04 , H02M7/00 , H01L25/18 , H01L25/07 , H01L23/00 , H01L23/367
摘要： Gates of semiconductor switching elements are connected to a gate control wiring pattern. The gate control wiring pattern is further connected to a gate control terminal and a filter terminal which are connected by an element for forming a filter outside a housing. The filter terminal and the gate control terminal are connected to the gate control wiring pattern in such a manner that a section electrically connecting the filter terminal and the gate control terminal overlaps with at least a part of a section electrically connecting the gates of the semiconductor switching elements on the gate control wiring pattern.
-
公开(公告)号：US10027218B2
公开(公告)日：2018-07-17
申请号：US15322763
申请日：2015-01-21
摘要： A power semiconductor device driving circuit has a capacitor whose one end is connected with a first or a second main electrode of a power semiconductor device, a first switch for charging the capacitor and a control electrode of the power semiconductor device with electric charges, and a second switch for discharging electric charges; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through different resistors, electric charges are discharged from the control electrode and the capacitor through one and the same resistor when the second switch turns on; in the case where when the first switch turns on, the control electrode and the capacitor are charged with electric charges through one and the same resistor, electric charges are discharged from the control electrode and the capacitor through different resistors when the second switch turns on.
-
公开(公告)号：US09899328B2
公开(公告)日：2018-02-20
申请号：US15117327
申请日：2014-06-30
IPC分类号： H01L23/50 , H01L23/538 , H01L25/07 , H01L25/18 , H02M1/088 , H02M7/00 , H05K7/14 , H01L23/66 , H01L23/00
CPC分类号： H01L23/5386 , H01L23/50 , H01L23/5385 , H01L23/645 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/07 , H01L25/072 , H01L25/18 , H01L2223/6611 , H01L2224/05552 , H01L2224/0603 , H01L2224/48091 , H01L2224/48111 , H01L2224/48139 , H01L2224/48227 , H01L2224/49113 , H01L2224/49175 , H01L2224/73265 , H01L2924/00014 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/1203 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H02M1/088 , H02M7/003 , H05K7/1432 , H01L2924/00 , H01L2224/45099 , H01L2224/85399 , H01L2224/05599
摘要： A power semiconductor module includes: a positive arm and a negative arm that are formed by series connection of self-arc-extinguishing type semiconductor elements, the positive arm and the negative arm being connected at a series connection point between the self-arc-extinguishing type semiconductor elements; a positive-side electrode, a negative-side electrode, and an AC electrode connected to the positive arm and the negative arm; and a substrate on which a plurality of wiring patterns are formed, the wiring patterns connecting the self-arc-extinguishing type semiconductor elements of the positive arm and the negative arm to the positive-side electrode, the negative-side electrode, and the AC electrode. Respective directions of current flowing in adjacent wiring patterns are identical to each other, and one of the adjacent wiring patterns is arranged in mirror symmetry with the other of the adjacent wiring patterns.
-
公开(公告)号：US20150115288A1
公开(公告)日：2015-04-30
申请号：US14409301
申请日：2013-07-17
发明人： Yoshiko Tamada , Seiji Oka
IPC分类号： H01L25/07 , H01L23/14 , H01L23/373 , H01L23/00 , H01L23/15 , H01L23/367
CPC分类号： H01L25/072 , H01L23/049 , H01L23/145 , H01L23/15 , H01L23/24 , H01L23/3107 , H01L23/3675 , H01L23/3735 , H01L23/3736 , H01L23/4334 , H01L23/49811 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/18 , H01L2224/04042 , H01L2224/0603 , H01L2224/291 , H01L2224/32225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48227 , H01L2224/4911 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2224/73265 , H01L2924/10253 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/1203 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/1815 , H01L2924/30107 , H01L2924/3011 , H05K1/05 , H05K1/053 , H05K3/284 , H05K2203/1316 , H01L2924/00012 , H01L2924/014 , H01L2924/00 , H01L2924/00014
摘要： A power semiconductor module includes a base plate as a metallic heat dissipating body, a first insulating layer on the base plate, and a first wiring pattern on the first insulating layer. On a predetermined region that is a part of the first wiring pattern, a second wiring pattern for a second layer is laminated via only a second insulating layer made of resin, thereby forming a pattern laminated region. A power semiconductor element is mounted in a region other than the pattern laminated region on the first wiring pattern. The base plate, the first insulating layer, the first wiring pattern, the second insulating layer, the second wiring pattern, and the power semiconductor element are integrally sealed with a transfer mold resin, thus obtaining the power semiconductor module.
摘要翻译： 功率半导体模块包括作为金属散热体的基板，基板上的第一绝缘层和第一绝缘层上的第一布线图案。 在作为第一布线图案的一部分的预定区域上，仅通过由树脂制成的第二绝缘层层叠第二层的第二布线图案，从而形成图案层叠区域。 功率半导体元件安装在除了第一布线图案上的图案层叠区域之外的区域中。 基板，第一绝缘层，第一布线图案，第二绝缘层，第二布线图案和功率半导体元件与转移树脂一体地密封，从而获得功率半导体模块。
-
-
-
-
-
-
-
-
-
搜索结果
15 条记录 (耗时 0.027 秒)
