公开(公告)号：US11721670B2

公开(公告)日：2023-08-08

申请号：US17203938

申请日：2021-03-17

申请人： Mitsubishi Electric Corporation

发明人： Takashi Tsubakidani ,  Kosuke Yamaguchi

IPC分类号： H01L25/065 ,  H03K17/687 ,  H01L25/18 ,  H03K17/0812 ,  H01L23/00

CPC分类号： H01L25/0657 ,  H01L24/05 ,  H01L24/29 ,  H01L24/45 ,  H01L25/18 ,  H03K17/08122 ,  H03K17/687 ,  H01L2224/05552 ,  H01L2224/2908 ,  H01L2225/06503

摘要： A second semiconductor switching element is connected in series with a first semiconductor switching element, and is at least partially stacked on the first semiconductor switching element in the thickness direction. A first control element controls the first semiconductor switching element and the second semiconductor switching element, and performs an overcurrent protection operation with reference to a shunt voltage. The first control element is arranged outside the first semiconductor switching element and the second semiconductor switching element in the in-plane direction.