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    Charged beam lithography system
    1.
    发明授权
    Charged beam lithography system 有权
    带电光束光刻系统

    公开(公告)号：US06313476B1

    公开(公告)日：2001-11-06

    申请号：US09459648

    申请日：1999-12-13

    申请人： Mitsuko Shimizu ,  Takayuki Abe ,  Hirohito Anze ,  Susumu Oogi ,  Takashi Kamikubo ,  Eiji Murakami ,  Yoshiaki Hattori ,  Tomohiro Iijima ,  Hitoshi Higurashi ,  Kazuto Matsuki

    发明人： Mitsuko Shimizu ,  Takayuki Abe ,  Hirohito Anze ,  Susumu Oogi ,  Takashi Kamikubo ,  Eiji Murakami ,  Yoshiaki Hattori ,  Tomohiro Iijima ,  Hitoshi Higurashi ,  Kazuto Matsuki

    IPC分类号： A61N500

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J2237/31769

    摘要： A charged beam lithography system includes a charged particle gun for generating charged beams, a main deflecting system and a sub-deflecting system for deflecting the charged beams generated by the charged particle gun, and a control computer. The charged beam lithography system is designed to cause the surface of a substrate to be irradiated with the charged beams from the charged particle gun while continuously moving a stage, to write a desired pattern for each of stripes defined by the maximum deflection widths of the main deflecting system and the sub-deflecting system. The charged beam lithography system further comprises: a real time proximity effect correcting circuit for calculating an optimum dosage for each of the stripes by correcting the dosage of the electron beams in view of the influence of the proximity effect; and a cash memory for storing the optimum dosage data for at least two of the stripes. Thus, the charged beam lithography system is designed to shift a divided form of the whole written region using the stripes at each wiring number of times, by a predetermined distance from a predetermined reference position in a direction perpendicular to a stage continuous moving direction, while selectively extracting the optimum dosage data from the cash memory so as to correspond to each of written stripes at each writing number of times, to write patterns. During the writing operation, the optimum dosage data corresponding to the next region to be written are transferred from the real time proximity effect correcting circuit to the cash memory, and the real time proximity effect correcting circuit calculates optimum dosages for the stripes corresponding to regions to be written after next and thereafter.

    摘要翻译： 带电束光刻系统包括用于产生带电束的带电粒子枪，用于偏转由带电粒子枪产生的带电束的主偏转系统和副偏转系统以及控制计算机。 带电光束光刻系统被设计成在连续移动平台的同时使来自带电粒子枪的带电束照射衬底的表面，以便为由主体的最大偏转宽度限定的条纹写入期望的图案 偏转系统和副偏转系统。 带电光束光刻系统还包括：实时邻近效应校正电路，用于通过根据邻近效应的影响校正电子束的剂量来计算每个条纹的最佳剂量; 以及用于存储至少两个条纹的最佳剂量数据的现金存储器。 因此，带电光束光刻系统被设计成使用每个布线次数的条纹将整个写入区域的分割形式沿垂直于平台连续移动方向的预定基准位置移动预定距离，同时 从现金存储器中选择性地提取最佳剂量数据，以便在每次写入次数时对应于每个写入条带，以写入模式。 在写入操作期间，对应于要写入的下一区域的最佳剂量数据从实时邻近效应校正电路传送到现金存储器，并且实时邻近效应校正电路针对与区域对应的条纹计算最佳剂量 写在下一个和之后。