公开(公告)号：US20120098040A1

公开(公告)日：2012-04-26

申请号：US13335537

申请日：2011-12-22

申请人： Mitsuyoshi MORI ,  Takumi YAMAGUCHI ,  Takahiko MURATA

发明人： Mitsuyoshi MORI ,  Takumi YAMAGUCHI ,  Takahiko MURATA

IPC分类号： H01L27/146

CPC分类号： H01L27/14609 ,  H01L27/14641 ,  H04N5/3741 ,  H04N5/37457

摘要： A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

摘要翻译： 固态成像装置包括：多个光电转换单元，每个光电转换单元包括排列成至少两行和两列的阵列的多个光电部分; 多个浮动扩散部分，各自通过多个传输晶体管中的每一个连接到每个所述光电转换单元的同一行中的每个光电部分中的每一个，并由所述光电部分共享; 多个读出线各自选择性地连接到所述传输晶体管中的至少两个; 以及多个像素放大器晶体管，每个检测并输出每个所述浮动扩散部分的电位。 通过不同的浮动扩散部分读出各自连接到一条读出线并被转移晶体管读出的光电转换部分的电荷。

公开(公告)号：US20080284882A1

公开(公告)日：2008-11-20

申请号：US12178250

申请日：2008-07-23

申请人： Mitsuyoshi MORI ,  Takumi YAMAGUCHI ,  Takahiko MURATA

发明人： Mitsuyoshi MORI ,  Takumi YAMAGUCHI ,  Takahiko MURATA

IPC分类号： H04N5/335

CPC分类号： H01L27/14609 ,  H01L27/14641 ,  H04N5/3741 ,  H04N5/37457

摘要： A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

摘要翻译： 固态成像装置包括：多个光电转换单元，每个光电转换单元包括排列成至少两行和两列的阵列的多个光电部分; 多个浮动扩散部分，各自通过多个传输晶体管中的每一个连接到每个所述光电转换单元的同一行中的每个光电部分中的每一个，并由所述光电部分共享; 多个读出线各自选择性地连接到所述传输晶体管中的至少两个; 以及多个像素放大器晶体管，每个检测并输出每个所述浮动扩散部分的电位。 通过不同的浮动扩散部分读出各自连接到一条读出线并被转移晶体管读出的光电转换部分的电荷。

公开(公告)号：US20060278948A1

公开(公告)日：2006-12-14

申请号：US11422708

申请日：2006-06-07

申请人： Takumi YAMAGUCHI ,  Takahiko MURATA ,  Shigetaka KASUGA

发明人： Takumi YAMAGUCHI ,  Takahiko MURATA ,  Shigetaka KASUGA

IPC分类号： H01L31/00

CPC分类号： H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

摘要： An object of the present invention is to provide a small solid-state image sensor which realizes significant improvement in sensitivity. The solid-state image sensor of the present invention includes a semiconductor substrate in which photoelectric conversion units are formed, a light-blocking film which is formed above the semiconductor substrate and has apertures formed so as to be positioned above respective photoelectric conversion units, and a high refractive index layer formed in the apertures. Here, each aperture has a smaller aperture width than a maximum wavelength in a wavelength of light in a vacuum converted from a wavelength of the light entering the photoelectric conversion unit through the apertures, and the high refractive index is made of a high refractive index material having a refractive index which allows transmission of light having the maximum wavelength through the aperture.

摘要翻译： 本发明的目的是提供一种实现敏感度显着提高的小型固态图像传感器。 本发明的固态图像传感器包括形成有光电转换单元的半导体衬底，形成在半导体衬底之上并具有形成为位于各个光电转换单元之上的孔的遮光膜，以及 形成在孔中的高折射率层。 这里，每个孔径在从通过孔进入光电转换单元的光的波长转换的真空中的光波长中的最大波长较小，高折射率由高折射率材料 具有折射率，其允许通过孔径传输具有最大波长的光。

公开(公告)号：US20080129851A1

公开(公告)日：2008-06-05

申请号：US11946987

申请日：2007-11-29

申请人： Shigetaka KASUGA ,  Takumi YAMAGUCHI ,  Takahiko MURATA ,  Takayoshi YAMADA

发明人： Shigetaka KASUGA ,  Takumi YAMAGUCHI ,  Takahiko MURATA ,  Takayoshi YAMADA

IPC分类号： H04N5/335 ,  H04N5/217

CPC分类号： H04N5/335

摘要： A solid-state imaging device includes: a pixel unit which is composed of a plurality of pixel circuits arranged in a matrix, each pixel circuit outputting an analog signal by performing photoelectric conversion; an AD conversion circuit 15a provided for each of columns which sequentially converts a plurality of analog signals outputted from a plurality of ones of the pixel circuits in the column into a plurality of digital signals; a memory circuit 15b provided for each column which includes memories 32 and 33 and performs, in parallel, a process of storing each of the digital signals in one of the memories 32 and 33 and a process of outputting a digital signal stored in advance in the other; and data buses 17 connected to the memory circuit 15b in each column.

摘要翻译： 固态成像装置包括：像素单元，其由以矩阵形式排列的多个像素电路组成，每个像素电路通过进行光电转换而输出模拟信号; 为从列中的多个像素电路输出的多个模拟信号依次变换为多个数字信号的各列设置的AD转换电路15a; 为包括存储器32和33的每列提供的存储器电路15b并行地执行将每个数字信号存储在存储器32和33中的一个中的处理以及预先存储的数字信号的处理 另一个; 以及连接到每列的存储器电路15b的数据总线17。

公开(公告)号：US20070046801A1

公开(公告)日：2007-03-01

申请号：US11463693

申请日：2006-08-10

申请人： Shigetaka KASUGA ,  Takumi YAMAGUCHI ,  Takahiko MURATA

发明人： Shigetaka KASUGA ,  Takumi YAMAGUCHI ,  Takahiko MURATA

IPC分类号： H04N5/335

CPC分类号： H04N5/357 ,  H04N5/374 ,  H04N5/376

摘要： A plurality of pixels that are arranged two-dimensionally, a horizontal scanning circuit and a vertical scanning circuit that output a signal for reading out an accumulated charge in the pixel, and a multiplexer circuit that supplies a control signal to elements constituting each of the pixels based on the signal outputted from the vertical scanning circuit are provided. The vertical scanning circuit is used singly to output a scanning signal for reading out the accumulated charge and a scanning signal for clearing the accumulated charge in the pixel, and the multiplexer circuit is used singly to supply an accumulated charge readout signal and an accumulated charge clearing signal as the control signal based on the scanning signal for reading out the accumulated charge and the scanning signal for clearing the accumulated charge. One vertical scanning circuit is used for both scanning for reading out an accumulated charge and scanning for clearing the accumulated charge, and one multiplexer is used for outputting both an accumulated charge readout signal and an accumulated charge clearing signal, thus allowing a reduction of a chip area and an improvement in an operation yield.

摘要翻译： 二维排列的多个像素，输出用于读出像素中的累积电荷的信号的水平扫描电路和垂直扫描电路，以及将控制信号提供给构成每个像素的元素的多路复用电路 基于从垂直扫描电路输出的信号。 垂直扫描电路单独使用以输出用于读出累积电荷的扫描信号和用于清除像素中的累积电荷的扫描信号，并且多路复用器电路单独使用以提供累积电荷读出信号和累积电荷清除 基于用于读出累积电荷的扫描信号和用于清除累积电荷的扫描信号作为控制信号的信号。 一个垂直扫描电路用于扫描读出累积电荷并扫描以清除累积电荷，并且一个多路复用器用于输出累积电荷读出信号和累积电荷清除信号，从而允许减少芯片 面积和运营收益率的提高。