摘要:
A display device includes a sequentially stacked body formed of a gate signal line, an insulation film, a semiconductor layer and a conductor layer on a substrate. The conductive layer forms a drain electrode and a source electrode of a thin film transistor which are arranged with a channel region of the semiconductor layer therebetween, and one of the drain and source electrode is formed in an approximately U shape having an open-ended one end side and a connecting portion on another end side so that the one electrode surrounds a distal end portion of another electrode as viewed in a plan view, and a projecting portion is formed on a side of the connecting portion opposite to the another electrode.
摘要:
The present invention provides a display device which can obviate the occurrence of a leak current in a thin film transistor. In a display device including a substrate, and gate signal lines, an insulation film, semiconductor layers and conductor layers which are sequentially stacked on the substrate, the conductor layer forms at least a drain electrode which is connected to a drain signal line and a source electrode which is connected to a pixel electrode, and the semiconductor layer is formed in a pattern in which the semiconductor layer has a protruding portion which protrudes outwardly from the conductor layer at a portion thereof except for a distal end of the drain electrode as viewed in a plan view.
摘要:
A display device includes a sequentially stacked body formed of a gate signal line, an insulation film, a semiconductor layer and a conductor layer on a substrate. The conductive layer forms a drain electrode and a source electrode of a thin film transistor which are arranged with a channel region of the semiconductor layer therebetween, and one of the drain and source electrode is formed in an approximately U shape having an open-ended one end side and a connecting portion on another end side so that the one electrode surrounds a distal end portion of another electrode as viewed in a plan view, and a projecting portion is formed on a side of the connecting portion opposite to the another electrode.
摘要:
The present invention provides a method for manufacturing a display device which can reliably form electrodes in a thin film transistor. A method for manufacturing a display device includes the steps of: preparing a substrate having a sequentially stacked body formed of a gate signal line, an insulation film, a semiconductor layer and a conductor layer; forming a drain electrode and a source electrode of a thin film transistor at least in a region where the thin film transistor is formed in a pattern in which one of the drain electrode and the source electrode is formed in an approximately U shape having an open-ended one end side and a connecting portion on another end side such that one electrode surrounds a distal end portion of another electrode as viewed in a plan view and a projecting portion is formed on a side of the connecting portion opposite to another electrode, wherein the respective electrodes are formed by selectively etching the conductor layer using a photoresist film as a mask; and etching the semiconductor layer using a deformed photoresist film which is formed by directly reflowing the photoresist film as a mask.
摘要:
The present invention provides a display device which can obviate the occurrence of a leak current in a thin film transistor. In a display device including a substrate, and gate signal lines, an insulation film, semiconductor layers and conductor layers which are sequentially stacked on the substrate, the conductor layer forms at least a drain electrode which is connected to a drain signal line and a source electrode which is connected to a pixel electrode, and the semiconductor layer is formed in a pattern in which the semiconductor layer has a protruding portion which protrudes outwardly from the conductor layer at a portion thereof except for a distal end of the drain electrode as viewed in a plan view.
摘要:
The present invention provides a method for manufacturing a display device which can reliably form electrodes in a thin film transistor. A method for manufacturing a display device includes the steps of: preparing a substrate having a sequentially stacked body formed of a gate signal line, an insulation film, a semiconductor layer and a conductor layer; forming a drain electrode and a source electrode of a thin film transistor at least in a region where the thin film transistor is formed in a pattern in which one of the drain electrode and the source electrode is formed in an approximately U shape having an open-ended one end side and a connecting portion on another end side such that one electrode surrounds a distal end portion of another electrode as viewed in a plan view and a projecting portion is formed on a side of the connecting portion opposite to another electrode, wherein the respective electrodes are formed by selectively etching the conductor layer using a photoresist film as a mask; and etching the semiconductor layer using a deformed photoresist film which is formed by directly reflowing the photoresist film as a mask.
摘要:
An object of the present invention is to provide a display device where a semiconductor layer pattern formed between a pair of electrodes can be formed to a predetermined size, even in the case where the distance between the electrodes on top of a semiconductor layer pattern is relatively large in elements formed in accordance with a photoresist reflow technology. The present invention provides a display device where elements are formed on an insulating substrate, characterized in that the above described elements comprise: a semiconductor layer pattern formed on a main surface of the above described insulating substrate or an insulating film layer formed on the main surface; and a number of electrodes provided in parallel at a distance from each other on the above described semiconductor layer pattern, the above described number of electrodes are a first electrode, a second electrode and dummy electrodes located between the first electrode and the second electrode, and the above described number of electrodes are patterned so that a protrusion is formed, in which the above described electrodes are aligned at on least one end side of at least one of the facing sides.
摘要:
An object of the present invention is to provide a display device where a semiconductor layer pattern formed between a pair of electrodes can be formed to a predetermined size, even in the case where the distance between the electrodes on top of a semiconductor layer pattern is relatively large in elements formed in accordance with a photoresist reflow technology. The present invention provides a display device where elements are formed on an insulating substrate, characterized in that the above described elements comprise: a semiconductor layer pattern formed on a main surface of the above described insulating substrate or an insulating film layer formed on the main surface; and a number of electrodes provided in parallel at a distance from each other on the above described semiconductor layer pattern, the above described number of electrodes are a first electrode, a second electrode and dummy electrodes located between the first electrode and the second electrode, and the above described number of electrodes are patterned so that a protrusion is formed, in which the above described electrodes are aligned at on least one end side of at least one of the facing sides.
摘要:
It is an object of the present invention to provide a procedure for realizing inexpensive and simple production of 3-indole-pyruvic acid. A transformant is made using a polynucleotide having a specific nucleotide sequence encoding a protein having an oxidase activity, and oxidase is generated by culturing the transformant in a medium to accumulate the oxidase in the medium and/or the transformant. Further, tryptophan is converted into 3-indole-pyruvic acid in the presence of the transformant and/or a culture thereof to produce 3-indole-pyruvic acid.
摘要:
4-(Indol-3-ylmethyl)-4-hydroxy-2-oxoglutarate, which is useful as an intermediate in the synthesis of monatin, may be synthesized from indole pyruvic acid and pyruvic acid (and/or oxaloacetic acid) by using a novel aldolase derived from the genus Pseudomonas, Erwinia, Flavobacterium, or Xanthomonas.