摘要:
The disclosure relates to a p-type skutterudite material and a method of making the same, comprising providing a p-type skutterudite material having a general formula: IyFe4-xMxSb12/z(J) wherein I represents one or more filling atoms in a skutterudite phase, the total filling amount y satisfying 0.01≦y≦1; M represents one or more dopant atoms with the doping amount x satisfying 0≦x≦4; J represents one or more second phases with the molar ratio z satisfying 0≦z≦0.5; wherein second phase precipitates are dispersed throughout the skutterudite phase.
摘要翻译:本发明涉及一种p型方钴矿材料及其制备方法,包括提供具有以下通式的p型方钴矿材料:IyFe4-xMxSb12 / z(J)其中I表示方钴矿中的一个或多个填充原子 总填充量y满足0.01 @ y @ 1; M表示掺杂量x满足0 @ x @ 4的一个或多个掺杂剂原子; J表示摩尔比z满足0 @ z @ 0.5的一个或多个第二相; 其中第二相沉淀分散在整个方钴矿相中。
摘要:
A thermoelectric device, a method for fabricating a thermoelectric device and electrode materials applied to the thermoelectric device are provided according to the present invention. The present invention is characterized in arranging thermoelectric material power, interlayer materials and electrode materials in advance according to the structure of thermoelectric device; adopting one-step sintering method to make a process of forming bulked thermoelectric materials and a process of combining with electrodes on the devices to be completed simultaneously; and obtaining a π shape thermoelectric device finally. Electrode materials related to the present invention comprise binary or ternary alloys or composite materials, which comprise at least a first metal selected from Cu, Ag, Al or Au, and a second metal selected from Mo, W, Zr, Ta, Cr, Nb, V or Ti. The present invention simplifies fabricating procedures, reduces the cost and avoids adverse impacts due to exposing related elements to heat and pressure for a second time.
摘要:
A thermoelectric device, a method for fabricating a thermoelectric device and electrode materials applied to the thermoelectric device are provided according to the present invention. The present invention is characterized in arranging thermoelectric material power, interlayer materials and electrode materials in advance according to the structure of thermoelectric device; adopting one-step sintering method to make a process of forming bulked thermoelectric materials and a process of combining with electrodes on the devices to be completed simultaneously; and obtaining a π shape thermoelectric device finally. Electrode materials related to the present invention comprise binary or ternary alloys or composite materials, which comprise at least a first metal selected from Cu, Ag, Al or Au, and a second metal selected from Mo, W, Zr, Ta, Cr, Nb, V or Ti. The present invention simplifies fabricating procedures, reduces the cost and avoids adverse impacts due to exposing related elements to heat and pressure for a second time.
摘要:
A composite material comprises a filled skutterudite matrix of formula (I) IyCo4Sb12 in which (I) represents at least one of Yb, Eu, Ce, La, Nd, Ba and Sr, 0.05≦y
摘要翻译:复合材料包括式(I)IyCo4Sb12的填充方钴矿基质,其中(I)表示Yb,Eu,Ce,La,Nd,Ba和Sr中的至少一种,0.05和nlE; y <1; 和填充的方钴矿基体内的GaSb颗粒,其中复合材料包含0.05-5mol%的GaSb颗粒。 与常规材料相比,复合材料表现出显着增加的塞贝克系数,总热导率略有降低,以及从低温端到高温端的整个温度区的热电性能指数显着增加, 增强热电效率。
摘要:
A method for fabricating thermoelectric device is provided. The method comprises placing a first electrode in a die, forming a first interlayer on an upper surface of the first electrode; positioning a separating plate on an upper surface of the first interlayer to divide an inner space of the die into a plurality of cells, and depositing a first thermoelectric material on the first interlayer within a first fraction of the cells, and depositing a second thermoelectric material on the first interlayer within a second fraction of the cells, sintering the die contents, and removing the separating plate after sintering to obtain a π shaped thermoelectric device.
摘要:
A method for fabricating thermoelectric device is provided. The method comprises placing a first electrode in a die, forming a first interlayer on an upper surface of the first electrode; positioning a separating plate on an upper surface of the first interlayer to divide an inner space of the die into a plurality of cells, and depositing a first thermoelectric material on the first interlayer within a first fraction of the cells, and depositing a second thermoelectric material on the first interlayer within a second fraction of the cells, sintering the die contents, and removing the separating plate after sintering to obtain a π shaped thermoelectric device.
摘要:
A composite material comprises a filled skutterudite matrix of formula (I) IyCo4Sb12 in which (I) represents at least one of Yb, Eu, Ce, La, Nd, Ba and Sr, 0.05≦y
摘要翻译:复合材料包括式(I)IyCo4Sb12的填充方钴矿基质,其中(I)表示Yb,Eu,Ce,La,Nd,Ba和Sr中的至少一种,0.05和nlE; y <1; 和填充的方钴矿基体内的GaSb颗粒,其中复合材料包含0.05-5mol%的GaSb颗粒。 与常规材料相比,复合材料表现出显着增加的塞贝克系数,总热导率略有降低,以及从低温端到高温端的整个温度区的热电性能指数显着增加, 增强热电效率。
摘要:
A coating for thermoelectric materials includes a thermoelectric layer having a thermoelectric material, a metal coating of one or more layers forming a surface in contact with the thermoelectric layer and an opposing surface, and a metal oxide coating of one or more layers including metal oxides, wherein the metal oxide coating forms a surface in contact with the opposing surface. A device comprises the material and a process for fabricating the same.