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公开(公告)号:US09376321B2
公开(公告)日:2016-06-28
申请号:US12475153
申请日:2009-05-29
申请人: Moon-Ho Jo , Yun-Sung Woo , Geun-Hee Lee
发明人: Moon-Ho Jo , Yun-Sung Woo , Geun-Hee Lee
IPC分类号: C23C16/24 , C01B33/027 , C30B25/00 , C30B29/06 , C30B29/60
CPC分类号: C01B33/027 , C23C16/24 , C30B25/00 , C30B29/06 , C30B29/60
摘要: A method and an apparatus for manufacturing a nanowire are provided. The method for manufacturing a nanowire includes i) providing a source gas into a chamber, ii) controlling the temperature of a substrate received in the chamber separately from the temperature of the source gas, iii) forming a temperature gradient on the substrate, and iv) forming a nanowire having at least one growth condition selected from a group of growth speed and growth direction controlled according to the temperature gradient on the substrate.
摘要翻译: 提供了一种用于制造纳米线的方法和装置。 制造纳米线的方法包括:i)将源气体提供到腔室中,ii)与源气体的温度分开地控制容纳在腔室中的衬底的温度,iii)在衬底上形成温度梯度,以及iv )形成具有至少一种生长条件的纳米线,所述生长条件选自根据基板上的温度梯度控制的生长速度和生长方向的组。
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公开(公告)号:US20100304026A1
公开(公告)日:2010-12-02
申请号:US12475153
申请日:2009-05-29
申请人: Moon-Ho Jo , Yun-Sung Woo , Geun-Hee Lee
发明人: Moon-Ho Jo , Yun-Sung Woo , Geun-Hee Lee
CPC分类号: C01B33/027 , C23C16/24 , C30B25/00 , C30B29/06 , C30B29/60
摘要: A method and an apparatus for manufacturing a nanowire are provided. The method for manufacturing a nanowire includes i) providing a source gas into a chamber, ii) controlling the temperature of a substrate received in the chamber separately from the temperature of the source gas, iii) forming a temperature gradient on the substrate, and iv) forming a nanowire having at least one growth condition selected from a group of growth speed and growth direction controlled according to the temperature gradient on the substrate.
摘要翻译: 提供了一种用于制造纳米线的方法和装置。 制造纳米线的方法包括:i)将源气体提供到腔室中,ii)与源气体的温度分开地控制容纳在腔室中的衬底的温度,iii)在衬底上形成温度梯度,以及iv )形成具有至少一种生长条件的纳米线,所述生长条件选自根据基板上的温度梯度控制的生长速度和生长方向的组。
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