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    Film bulk acoustic resonator and filter
    2.
    发明授权
    Film bulk acoustic resonator and filter 有权
    薄膜体声波谐振器和滤波器

    公开(公告)号：US07816998B2

    公开(公告)日：2010-10-19

    申请号：US12000654

    申请日：2007-12-14

    申请人： Motoaki Hara ,  Tokihiro Nishihara ,  Masanori Ueda ,  Go Endo

    发明人： Motoaki Hara ,  Tokihiro Nishihara ,  Masanori Ueda ,  Go Endo

    IPC分类号： H03H9/54 ,  H03H9/15

    CPC分类号： H03H9/174 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/173

    摘要： A film bulk acoustic resonator includes a lower electrode that is formed on a void of a substrate or is formed so that a void is formed between the lower electrode and the substrate, a piezoelectric film that is formed on the lower electrode, an upper electrode that is formed on the piezoelectric film so as to have a resonance region facing the lower electrode through the piezoelectric film, a support region that is provided around the resonance region, has a width of 0.35 times to 0.65 times a wavelength of a wave propagating in a lateral direction, and transmits the wave passes, and an adjacent region that is provided around the support region and blocks the wave.

    摘要翻译： 薄膜体声波谐振器包括形成在基板的空隙上或形成为在下电极和基板之间形成空隙的下电极，形成在下电极上的压电膜，上电极 形成在压电膜上，以便具有通过压电膜面向下电极的共振区域，设置在谐振区域周围的支撑区域的宽度是在波长传播的波长的波长的0.35倍至0.65倍 横向传播，并且传递波通，以及设置在支撑区域周围并阻挡波的相邻区域。

    Piezoelectric thin-film resonator and filter using the same
    3.
    发明申请
    Piezoelectric thin-film resonator and filter using the same 有权
    压电薄膜谐振器和使用其的滤波器

    公开(公告)号：US20080143215A1

    公开(公告)日：2008-06-19

    申请号：US11976608

    申请日：2007-10-25

    申请人： Motoaki Hara ,  Tokihiro Nishihara ,  Masanori Ueda ,  Go Endo

    发明人： Motoaki Hara ,  Tokihiro Nishihara ,  Masanori Ueda ,  Go Endo

    IPC分类号： H01L41/047 ,  H03H9/15 ,  H03H9/54

    CPC分类号： H03H9/174 ,  H03H3/04 ,  H03H9/13 ,  H03H9/132 ,  H03H9/173 ,  H03H9/568 ,  H03H2003/023

    摘要： A piezoelectric thin-film resonator includes: a lower electrode supported by a substrate, a space being defined below the lower electrode; a piezoelectric film provided on the lower electrode and the substrate; and an upper electrode provided on the piezoelectric film so as to form a resonance portion in which the upper electrode faces the lower electrode across the piezoelectric film. At least one of the lower electrode and the upper electrode has an interconnection portion used to extract a signal from the resonance portion and located above the space. The at least one of the lower electrode and the upper electrode has a first mass per unit area in which the at least one of the lower electrode and the upper electrode contacts the piezoelectric film and a second mass per unit area in the resonance portion. The first mass per unit area is smaller than the second mass per unit area.

    摘要翻译： 压电薄膜谐振器包括：由基板支撑的下电极，在下电极下方限定空间; 设置在下电极和基板上的压电膜; 以及设置在压电膜上的上电极，以形成谐振部分，其中上电极面向下电极穿过压电膜。 下电极和上电极中的至少一个具有用于从谐振部分提取信号并位于空间上方的互连部分。 下电极和上电极中的至少一个具有每单位面积的第一质量，其中下电极和上电极中的至少一个与压电膜接触，并且在谐振部分中每单位面积具有第二质量。 每单位面积的第一个质量小于每单位面积的第二个质量。

    Piezoelectric thin-film resonator and filter using the same
    6.
    发明授权
    Piezoelectric thin-film resonator and filter using the same 有权
    压电薄膜谐振器和使用其的滤波器

    公开(公告)号：US07602101B2

    公开(公告)日：2009-10-13

    申请号：US11976608

    申请日：2007-10-25

    申请人： Motoaki Hara ,  Tokihiro Nishihara ,  Masanori Ueda ,  Go Endo

    发明人： Motoaki Hara ,  Tokihiro Nishihara ,  Masanori Ueda ,  Go Endo

    IPC分类号： H01L41/047

    CPC分类号： H03H9/174 ,  H03H3/04 ,  H03H9/13 ,  H03H9/132 ,  H03H9/173 ,  H03H9/568 ,  H03H2003/023

    摘要： A piezoelectric thin-film resonator includes: a lower electrode supported by a substrate, a space being defined below the lower electrode; a piezoelectric film provided on the lower electrode and the substrate; and an upper electrode provided on the piezoelectric film so as to form a resonance portion in which the upper electrode faces the lower electrode across the piezoelectric film. At least one of the lower electrode and the upper electrode has an interconnection portion used to extract a signal from the resonance portion and located above the space. The at least one of the lower electrode and the upper electrode has a first mass per unit area in which the at least one of the lower electrode and the upper electrode contacts the piezoelectric film and a second mass per unit area in the resonance portion. The first mass per unit area is smaller than the second mass per unit area.

    摘要翻译： 压电薄膜谐振器包括：由基板支撑的下电极，在下电极下方限定空间; 设置在下电极和基板上的压电膜; 以及设置在压电膜上的上电极，以形成谐振部分，其中上电极面向下电极穿过压电膜。 下电极和上电极中的至少一个具有用于从谐振部分提取信号并位于空间上方的互连部分。 下电极和上电极中的至少一个具有每单位面积的第一质量，其中下电极和上电极中的至少一个与压电膜接触，并且在谐振部分中每单位面积具有第二质量。 每单位面积的第一个质量小于每单位面积的第二个质量。

    Film bulk acoustic resonator and filter
    8.
    发明申请
    Film bulk acoustic resonator and filter 有权
    薄膜体声波谐振器和滤波器

    公开(公告)号：US20080150653A1

    公开(公告)日：2008-06-26

    申请号：US12000654

    申请日：2007-12-14

    申请人： Motoaki Hara ,  Tokihiro Nishihara ,  Masanori Ueda ,  Go Endo

    发明人： Motoaki Hara ,  Tokihiro Nishihara ,  Masanori Ueda ,  Go Endo

    IPC分类号： H03H9/54 ,  H01L41/053 ,  H01L41/047

    CPC分类号： H03H9/174 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/173

    摘要： A film bulk acoustic resonator includes a lower electrode that is formed on a void of a substrate or is formed so that a void is formed between the lower electrode and the substrate, a piezoelectric film that is formed on the lower electrode, an upper electrode that is formed on the piezoelectric film so as to have a resonance region facing the lower electrode through the piezoelectric film, a support region that is provided around the resonance region, has a width of 0.35 times to 0.65 times a wavelength of a wave propagating in a lateral direction, and transmits the wave passes, and an adjacent region that is provided around the support region and blocks the wave.

    摘要翻译： 薄膜体声波谐振器包括形成在基板的空隙上或形成为在下电极和基板之间形成空隙的下电极，形成在下电极上的压电膜，上电极 形成在压电膜上，以便具有通过压电膜面向下电极的共振区域，设置在谐振区域周围的支撑区域的宽度是在波长传播的波长的波长的0.35倍至0.65倍 横向传播，并且传递波通，以及设置在支撑区域周围并阻挡波的相邻区域。

    Elastic wave device and method for manufacturing the same
    9.
    发明授权
    Elastic wave device and method for manufacturing the same 有权
    弹性波装置及其制造方法

    公开(公告)号：US08854158B2

    公开(公告)日：2014-10-07

    申请号：US13127215

    申请日：2008-11-28

    申请人： Tsuyoshi Yokoyama ,  Shinji Taniguchi ,  Masafumi Iwaki ,  Motoaki Hara ,  Takeshi Sakashita ,  Tokihiro Nishihara ,  Masanori Ueda

    发明人： Tsuyoshi Yokoyama ,  Shinji Taniguchi ,  Masafumi Iwaki ,  Motoaki Hara ,  Takeshi Sakashita ,  Tokihiro Nishihara ,  Masanori Ueda

    IPC分类号： H03H9/54 ,  H03H3/04 ,  H03H9/56 ,  H03H9/17

    CPC分类号： H03H9/173 ,  H03H3/04 ,  H03H9/564 ,  H03H9/568 ,  H03H2003/0414 ,  H03H2003/0428 ,  Y10T29/42 ,  Y10T29/49005

    摘要： A method of manufacturing an elastic wave device is provided with a lamination step of forming, on a substrate (1), a plurality of elastic wave devices, each of which includes a lower electrode (2), a piezoelectric film (3), and an upper electrode (4); a measuring step for measuring the operation frequency distribution of the elastic wave devices on the substrate (1); and an adjusting step for forming an adjusting region, in which the thickness of the elastic wave device is different from the thicknesses of other portions in a resonance portion of each elastic wave device, corresponding with the distribution of the operation frequencies. The adjusting region is formed so that the size of the area of the adjusting region of the resonator portion of each elastic wave device is different in accordance with the operation frequency distribution that is measured. Thus, the frequency characteristics of the elastic wave devices are easily adjusted by a small number of steps.

    摘要翻译： 一种制造弹性波装置的方法具有层压步骤，在基板（1）上形成多个弹性波装置，每个弹性波装置包括下电极（2），压电薄膜（3）和 上电极（4）; 用于测量衬底（1）上的弹性波器件的操作频率分布的测量步骤; 以及用于形成调整区域的调整步骤，其中弹性波器件的厚度与每个弹性波器件的谐振部分中的其它部分的厚度不同，与对应于操作频率的分布相对应。 调整区域被形成为使得每个弹性波装置的谐振器部分的调整区域的面积的大小根据所测量的操作频率分布而不同。 因此，弹性波器件的频率特性可以通过少量的步骤容易地调节。