利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

58 条记录 (耗时 0.031 秒)

    Recording member
    1.
    发明授权
    Recording member 失效
    录音成员

    公开(公告)号：US4348461A

    公开(公告)日：1982-09-07

    申请号：US160661

    申请日：1980-06-18

    申请人： Motoyasu Terao ,  Yoshio Taniguchi ,  Shinkichi Horigome ,  Masahiro Ojima ,  Kazuo Shigematsu ,  Keizo Kato ,  Yoshinori Miyamura ,  Seiji Yonezawa

    发明人： Motoyasu Terao ,  Yoshio Taniguchi ,  Shinkichi Horigome ,  Masahiro Ojima ,  Kazuo Shigematsu ,  Keizo Kato ,  Yoshinori Miyamura ,  Seiji Yonezawa

    IPC分类号： B41M5/26 ,  G03C1/705 ,  G11B7/24 ,  G11B7/243 ,  B32B5/14

    CPC分类号： G11B7/243 ,  G03C1/705 ,  G11B2007/24314 ,  G11B2007/24316 ,  Y10S428/913 ,  Y10S430/146 ,  Y10S430/165 ,  Y10T428/31

    摘要： A recording member having a predetermined substrate, and a thin film which is formed on the substrate and which is formed with recesses or pits for recording information when irradiated with a working beam, characterized in that said thin film is formed of an inorganic material which contains at least arsenic, selenium and tellurium, and that a distribution of either of said Se and said Te decreases from a part near the surface of said thin film towards a central part thereof, while a distribution of said As increases from a part near the surface towards said central part, is disclosed. This recording member can afford a high signal-to-noise ratio and a long lifetime. It is preferable that the distribution of said Se decreases so as to be at least 50 atomic-% in terms of the content of said Se in a part being the closest to the surface of said thin film and to be at most 40 atomic-% in terms of the average content of said Se over the whole thin film, and that the distribution of said As increases so as to be at most 15 atomic-% in terms of the content of said As in the closest part and to be 5 to 35 atomic-% in terms of the average content of said As in said whole thin film. The Se-Te-As-based material may well be doped with at least one element selected from the group consisting of Ge, S, Tl, Sn, Pb, In and Ta, within a range of 2 to 15 atomic-%.

    摘要翻译： 具有预定基板的记录部件和形成在基板上并且在用工作光束照射时用于记录信息的凹坑或凹坑形成的薄膜，其特征在于，所述薄膜由无机材料形成，所述无机材料包含 至少砷，硒和碲，并且所述Se和所述Te中的任一个的分布从所述薄膜的表面附近的部分向其中心部分减少，而所述As的分布从表面附近的部分增加 朝向所述中心部分。 该记录部件可以提供高的信噪比和长的使用寿命。 优选所述Se的分布以与所述薄膜表面最接近的部分中的所述Se的含量为至少50原子％，并且为至多40原子％ 就所述Se在整个薄膜上的平均含量而言，所述As的分布以所述As在最接近的部分的含量为最多为15原子％，并且为5〜 在所述整个薄膜中，所述As的平均含量为35原子％。 可以在2至15原子％的范围内掺杂选自由Ge，S，Tl，Sn，Pb，In和Ta组成的组中的至少一种元素的Se-Te-As基材料。

    Recording medium
    2.
    发明授权
    Recording medium 失效
    录音媒体

    公开(公告)号：US4357616A

    公开(公告)日：1982-11-02

    申请号：US131761

    申请日：1980-03-19

    申请人： Motoyasu Terao ,  Yoshio Taniguchi ,  Shinkichi Horigome ,  Kazuo Shigematsu ,  Masahiro Ojima ,  Yoshinori Miyamura ,  Seiji Yonezawa

    发明人： Motoyasu Terao ,  Yoshio Taniguchi ,  Shinkichi Horigome ,  Kazuo Shigematsu ,  Masahiro Ojima ,  Yoshinori Miyamura ,  Seiji Yonezawa

    IPC分类号： G11B7/241 ,  G11B7/243 ,  G11B7/253 ,  G11B7/2531 ,  G11B7/2533 ,  G11B7/257 ,  G01D15/34

    CPC分类号： G11B7/241 ,  G11B7/243 ,  G11B2007/25706 ,  G11B2007/25708 ,  G11B2007/2571 ,  G11B2007/25715 ,  G11B2007/25716 ,  G11B7/244 ,  G11B7/252 ,  G11B7/2531 ,  G11B7/2533 ,  Y10S430/146

    摘要： A recording medium having at least a first inorganic material layer which overlies a predetermined substrate and which exhibits a light absorptivity for projected light, and a recording layer which overlies the first inorganic material layer and whose principal component is an organic material. The first inorganic material layer contains at least one element selected from the group consisting of In, Bi, Te, Sb, Ge, Sn, Pb, Cr, Nb, Ni, Pd, Fe, Pt, Re, Ta, Th, Ti, Zr and Tl and the content of the element or elements is at least 65 atomic-%.Further, the first inorganic material layer may well be overlaid with a second inorganic material layer which exhibits a light transmissivity higher than that of this first inorganic material layer. Preferable as the material of the second inorganic material layer is an inorganic material which contains at least one element selected from the group consisting of In, Bi, Te, Sb, Pb, Ge and Sn and at least one element selected from the group consisting of S, Se and O.In proximity to at least one surface of the first inorganic material layer, at least one stabilizing layer may be disposed as well.

    摘要翻译： 具有至少第一无机材料层的记录介质，所述第一无机材料层覆盖在预定的基板上并且对于投射的光呈现出光吸收性，以及记录层，其覆盖在第一无机材料层上，其主要成分是有机材料。 第一无机材料层含有选自In，Bi，Te，Sb，Ge，Sn，Pb，Cr，Nb，Ni，Pd，Fe，Pt，Re，Ta，Th，Ti， Zr和Tl，元素或元素的含量至少为65原子％。 此外，第一无机材料层可以很好地覆盖有比第一无机材料层高的透光率的第二无机材料层。 优选第二无机材料层的材料是含有选自In，Bi，Te，Sb，Pb，Ge和Sn中的至少一种元素的无机材料，以及选自由以下组成的组中的至少一种元素： S，Se和O.在第一无机材料层的至少一个表面附近，也可以设置至少一个稳定层。

    Wavelength multiplexing optical recording apparatus
    5.
    发明授权
    Wavelength multiplexing optical recording apparatus 失效
    波长复用光学记录装置

    公开(公告)号：US4908813A

    公开(公告)日：1990-03-13

    申请号：US127453

    申请日：1987-12-02

    申请人： Masahiro Ojima ,  Motoyasu Terao ,  Yoshio Taniguchi ,  Shuji Imazeki ,  Yasushi Tomioka

    发明人： Masahiro Ojima ,  Motoyasu Terao ,  Yoshio Taniguchi ,  Shuji Imazeki ,  Yasushi Tomioka

    IPC分类号： G11B7/14 ,  B41M5/26 ,  G11B7/0045 ,  G11B7/08 ,  G11B7/24

    CPC分类号： G11B7/24 ,  G11B7/0045 ,  G11B7/08

    摘要： Disclosed is a wavelength multiplexing optical recording apparatus comprising laser sources radiating a plurality of laser beams of different wavelengths, an optical system for focusing the laser beams, and an optical recording medium having a plurality of optical recording layers with wavelength sensitivities for selective recording by said laser beams focused by said optical system. The optical recording layers of recording medium are laminated with distances between adjacent layers being made consistent with biased focal positions of the laser beams attributable to the chromatic aberration of the optical system, so that the laser beams are focused on the optical recording layers of corresponding wavelength sensitivities.

    摘要翻译： 公开了一种波长复用光学记录装置，包括：辐射不同波长的多个激光束的激光源，用于聚焦激光束的光学系统;以及具有多个具有波长灵敏度的光学记录层的光学记录介质，用于通过所述 由所述光学系统聚焦的激光束。 记录介质的光学记录层层叠，使相邻层之间的距离与归因于光学系统的色差的激光束的偏置焦点位置一致，使得激光束聚焦在相应波长的光学记录层上 敏感性。

    Electrophotographic member with .alpha.-Si layers
    8.
    发明授权
    Electrophotographic member with .alpha.-Si layers 失效
    具有α-Si层的电子照相元件

    公开(公告)号：US4378417A

    公开(公告)日：1983-03-29

    申请号：US254294

    申请日：1981-04-15

    申请人： Eiichi Maruyama ,  Sachio Ishioka ,  Yoshinori Imamura ,  Hirokazu Matsubara ,  Yasuharu Shimomoto ,  Shinkichi Horigome ,  Yoshio Taniguchi

    发明人： Eiichi Maruyama ,  Sachio Ishioka ,  Yoshinori Imamura ,  Hirokazu Matsubara ,  Yasuharu Shimomoto ,  Shinkichi Horigome ,  Yoshio Taniguchi

    IPC分类号： G03G5/08 ,  G03G5/082 ,  H01L21/205 ,  H01L31/08

    CPC分类号： G03G5/08235 ,  G03G5/08221

    摘要： In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.

    摘要翻译： 在采用非晶硅光电导层的电子照相构件中，从非晶硅层的表面（或界面）向内至少10nm厚的非晶硅层的部分由非晶硅制成，该非晶硅具有光学禁带隙 至少1.6eV，电阻率至少为1010欧米加。 电子照相成像显示出令人满意的分辨率和良好的暗衰变特性。 此外，具有窄于形成表面（或界面）区域的非晶硅的光学禁止带隙的区域设置在至少10nm的厚度的非晶硅层内，由此将电子照相构件的灵敏度设置为 可以增加更长波长的光。

    Silicon dioxide film and process for preparation of the same
    10.
    发明申请
    Silicon dioxide film and process for preparation of the same 审中-公开
    二氧化硅薄膜及其制备方法

    公开(公告)号：US20060194453A1

    公开(公告)日：2006-08-31

    申请号：US10550859

    申请日：2004-03-25

    申请人： Yasushi Murakami ,  Masayuki Harano ,  Yoshio Takasu ,  Yoshio Taniguchi

    发明人： Yasushi Murakami ,  Masayuki Harano ,  Yoshio Takasu ,  Yoshio Taniguchi

    IPC分类号： H01L23/58 ,  H01L21/31

    CPC分类号： C03C11/00 ,  C03C3/06 ,  C03C2201/80

    摘要： A transparent amorphous silicon dioxide film containing many fine voids, characterized in that the refractive index (for light at λ=500 nm) is in the range of 1.01 to 1.40 and that 80 vol. % or more of the fine voids have a diameter of 5 nm or less, has a low refractive index and excellent physical strength such as high scratch resistance, so that it is advantageously employable as an optical film of an optical device for various uses.

    摘要翻译： 含有许多细小空隙的透明无定形二氧化硅膜，其特征在于折射率（对于λ= 500nm的光）在1.01〜1.40的范围内，80体积％ 小于等于或小于5nm的直径为5nm以下，具有折射率低，耐刮擦性优异的物理强度，有利地可用作各种用途的光学装置的光学膜。